Abstract: An image processing device includes a data transmitter/receiver and at least one processor. The processor obtains first data of a continuous first image, obtains performance information of a display of a first external device that displays a second image based on the first image, generates, from the first data, second data of the second image in accordance with the performance information, and outputs the second data to the first external device through the data transmitter/receiver.

Abstract: An optical signal processing apparatus of an embodiment is an optical signal processing apparatus for separating and detecting an optical signal transmitted in a mode division multiplexing optical communication method by signal processing based on a multi-input multi-output (MIMO)-type linear filter. The device includes a signal processing unit configured to estimate weighting factors of the MIMO-type linear filter by sequential calculation based on an affine projection method.

Abstract: The signal detection device includes the signal detection unit that derives the estimation vector of the transmission signal vector, the first conversion unit that converts the estimation vector of the transmission signal vector to the estimation vector of the transmission signal vector based on the reduced basis, the first determination unit that converts the estimation vector of the transmission signal vector based on the reduced basis to the determination value vector of the transmission signal vector, the first update unit that updates the separation matrix, the second conversion unit that converts the first error signal vector to the second error signal vector based on the reduced basis, the second update unit that updates the error covariance matrix based on the reduced basis, the second determination unit that determines whether or not the predetermined condition is satisfied, and a third update unit that updates the unimodular matrix, the inverse matrix of the unimodular matrix, and the error covarian

Abstract: A gear that is formed of material steel molded to include a disc portion and a plurality of tooth portions circumferentially discretely formed on the disc portion and have a shape in which tooth root portions are formed between the tooth portions, and is subjected to vacuum carburizing treatment and subsequent quenching treatment with high-density energy heating after being molded.

Abstract: A method for manufacturing a carburized part that includes vacuum carburizing a steel under a reduced pressure of 2 kPa or less, so that a surface carbon concentration after slow cooling performed after carburizing falls in a range of 0.9 to 1.5%, performing the slow cooling by air cooling at such a cooling rate that causes pearlite transformation, to transform a surface structure into pearlite; and thereafter, performing induction hardening under such heating and cooling conditions that produce fine carbides in a range of up to 0.1 mm from a surface by finely dividing cementite in the pearlite structure, where the fine carbides contain 90% or more of carbides of 1 ?m or less.

Abstract: A method of manufacturing a sheave member for a belt-type continuously variable transmission includes a forming step wherein an intermediate product having a sheave surface is formed by forging a steel material; a carburization step wherein the intermediate product is heated in a carburization gas; a gradual cooling step wherein the cooling speed is equal to or less than 20° C./sec, at least until the temperature of the intermediate product has passed through the transformation point; a high-frequency electrical heating step wherein a selected portion(s) of the intermediate product is heated; a water quenching step wherein the selected portion is quenched by contact with water; and a finishing step wherein a grinding process is applied to the intermediate product to attain the final shape. In the cooling step, preferably, the intermediate product is contacted with a cooling gas at a pressure lower than atmospheric pressure.

Abstract: Steel and steel shaped articles with an excellent delayed fracture resistance and a tensile strength of the 1600 MPa class or more, containing, by mass %, C: 0.20 to 0.60%, Si: 0.50% or less, Mn: over 0.10% to 3%, Al: 0.005 to 0.1%, Mo: over 3.0% to 10%, and, as needed, one or more of W: 0.01 to 10%, V: 0.05 to 1%, Ti: 0.01 to 1%, Nb: 0.01 to 1%, Cr: 0.10 to 2%, Ni: 0.05 to 1%, Cu: 0.05 to 0.5%, and B: 0.0003 to 0.01%, and a balance of Fe and unavoidable impurities and, further, a method of production comprising shaping the above steel to a desired shape (for example, a bolt shape), quenching it, then tempering it at 500 to 750° C. in temperature range.

Abstract: A method for manufacturing a carburized part that includes vacuum carburizing a steel under a reduced pressure of 2 kPa or less, so that a surface carbon concentration after slow cooling performed after carburizing falls in a range of 0.9 to 1.5%, performing the slow cooling by air cooling at such a cooling rate that causes pearlite transformation, to transform a surface structure into pearlite; and thereafter, performing induction hardening under such heating and cooling conditions that produce fine carbides in a range of up to 0.1 mm from a surface by finely dividing cementite in the pearlite structure, where the fine carbides contain 90% or more of carbides of 1 ?m or less.

Abstract: The present invention provides a high strength bolt excellent in delayed fracture resistance able to advantageously prevent hydrogen embrittlement as represented by the delayed fracture phenomenon occurring along with an increase in strength and causing a particular problem, and a method of production of the same, containing, by mass %, C: 0.2 to 0.6%, Si: 0.05 to 0.5%, Mn: 0.1 to 2%, Mo: 0.5 to 6%, and Al: 0.005 to 0.5%, having a tensile strength of 1400 MPa or more, and having a compressive residual stress of the surface layer of the thread root of 10 to 90% of the tensile strength. Further, a surface layer part of the thread root from the surface down to at least 50 ?m has pre-austenite grains with an aspect ratio of the axial direction and radial direction of 2 or more and that part has a hardness of Hv 460 or more. Further, the method of production comprises using the steel material having the above ingredients to shape the bolt head and shaft, then heat the bolt to 900 to 1100° C.

Abstract: A method of manufacturing a sheave member for a belt-type continuously variable transmission includes a forming step wherein an intermediate product having a sheave surface is formed by forging a steel material; a carburization step wherein the intermediate product is heated in a carburization gas; a gradual cooling step wherein the cooling speed is equal to or less than 20° C./sec, at least until the temperature of the intermediate product has passed through the transformation point; a high-frequency electrical heating step wherein a selected portion(s) of the intermediate product is heated; a water quenching step wherein the selected portion is quenched by contact with water; and a finishing step wherein a grinding process is applied to the intermediate product to attain the final shape. In the cooling step, preferably, the intermediate product is contacted with a cooling gas at a pressure lower than atmospheric pressure.

Abstract: Steel and steel shaped articles with an excellent delayed fracture resistance and a tensile strength of the 1600 MPa class or more, containing, by mass %, C: 0.20 to 0.60%, Si: 0.50% or less, Mn: over 0.10% to 3%, Al: 0.005 to 0.1%, Mo: over 3.0% to 10%, and, as needed, one or more of W: 0.01 to 10%, V: 0.05 to 1%, Ti: 0.01 to 1%, Nb: 0.01 to 1%, Cr: 0.10 to 2%, Ni: 0.05 to 1%, Cu: 0.05 to 0.5%, and B: 0.0003 to 0.01%, and a balance of Fe and unavoidable impurities and, further, a method of production comprising shaping the above steel to a desired shape (for example, a bolt shape), quenching it, then tempering it at 500 to 750° C. in temperature range.

Abstract: The present invention provides a high strength bolt excellent in delayed fracture resistance able to advantageously prevent hydrogen embrittlement as represented by the delayed fracture phenomenon occurring along with an increase in strength and causing a particular problem, and a method of production of the same, containing, by mass %, C: 0.2 to 0.6%, Si: 0.05 to 0.5%, Mn: 0.1 to 2%, Mo: 0.5 to 6%, and Al: 0.005 to 0.5%, having a tensile strength of 1400 MPa or more, and having a compressive residual stress of the surface layer of the thread root of 10 to 90% of the tensile strength. Further, a surface layer part of the thread root from the surface down to at least 50 ?m has pre-austenite grains with an aspect ratio of the axial direction and radial direction of 2 or more and that part has a hardness of Hv 460 or more. Further, the method of production comprises using the steel material having the above ingredients to shape the bolt head and shaft, then heat the bolt to 900 to 1100° C.

Abstract: A surface of a steel, as a material for a crankshaft, is nitrocarburized. The steel contains, as alloy elements C having a content 0.10 mass % or more 0.30 mass % or less, Si having a content 0.5 mass % or more and 0.3 mass % or less, Mn having a content 0.3 mass % or more and 1.5 mass % or less, Mo having a content 0.8 mass % or more and 2.0 mass % or less, Cr having a content 0.1 mass % or more and 1.0 mass % or less, and V having a content 0.1 mass % or more and 0.5 mass % or less, with a remainder consisting of Fe and inevitable impurities. The contents of the alloy elements fall within ranges: 2.0 mass %?Mn+Cr+Mo?3.0 mass %, 2.3 mass %?C+Mo+5V ?3.7 mass %, and 2.7 mass %?2.16 Cr+Mo+2.54V?4.0 mass %. If a steel sample extracted from a central portion of the nitrocarburized steel free from an influence of the nitrocarburizing treatment is austenitized at 1200° C.

Abstract: The present invention provides case-hardening steel superior in tooth surface fatigue strength and a gear using the same used for parts of automobiles, construction machines, industrial machines, etc., that is case-hardening steel superior in tooth surface fatigue strength containing, by wt %, C: 0.1 to 0.3%, Si: 1.0 to 2.0%, Mn: 0.3 to 2.0%, S: 0.005 to 0.05%, Cr: 1.0 to 2.6%, Mo: 0.8 to 4.0%, V: 0.1 to 0.3%, Al: 0.001 to 0.2%, and N: 0.003 to 0.03%, limiting P to 0.03% or less, and having as a balance iron and unavoidable impurities, and satisfies the following expression, 31Si (%)+15Mn (%)+23Cr (%)+26Mo (%)+100V (%) is 100 or more, and a gear comprised of case-hardening steel and having an X-ray diffraction half width at a depth of 50 mm from the surface of the gear of 6.4 degrees or more.

Abstract: This invention aims to provide a carburized component realizing a larger strength for power transmission components such as gears, and a method of manufacturing the same. The carburized component of this invention, aimed at realizing the object, consists essentially of, in % by mass and both ends inclusive, C: 0.1-0.30%, Si: 0.80-1.50%, Mn: 0.30-1.20%, Cr: 2.0-5.5%, and the balance of Fe and inevitable impurities; has a mean C concentration over the range from the surface of the steel to a depth of 0.2 mm after vacuum carburization of 1.2% or more and 3.0% or less, and has a ratio of a carbide area over the range from the surface to a depth of 50 ?m of 15% or more and 60% or less, has the carbide precipitated in a finely dispersed manner so that the carbide having a grain size of 10 ?m or less accounts for 90% or more of the entire portion, and has a depth of a grain boundary oxide layer below the surface of 1 ?m or less.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part.

Abstract: A pair of signal voltages outputted from a bridge circuit composed of plural strain gauges are linearly amplified individually by a pair of amplifiers, whereupon a difference between the pair of signal voltages is detected. The pair of amplifiers are formed respectively in regions that are symmetrical with each other on a chip. As a result, variations in the output characteristics between the amplifiers are decreased.

Abstract: A sunlight sensor is provided which detects sunlight by means of a semiconductor device and achieves the desired elevation angle characteristics. The sunlight sensor is implemented as a semiconductor device having p+ layers 10 and 11 as a light-responsive section and an n+ or n layer 9 as a light-nonresponsive section, and additionally having a light-detection element 2 which outputs a detection signal responsive to the amount of light received by the p+ layers 10 and 11. A light-transparent molding 4 is provided at least over the light-detection element 2, and additionally a light-cutoff mask 5 is provided on the transparent molding 4. The relative positions of the light-cutoff mask, the p+ layers 10 and 11, and the n+ or n layer 9 are then established.

Abstract: A process for epitaxially growing a compound semiconductor layer containing at least arsenic on a single crystal silicon substrate, which prevents the silicon impurity from intruding said compound semiconductor layer. The process comprises supplying one of the starting material gas, ASH.sub.3, into the reaction furnace to effect growth, but in such a manner that the AsH.sub.3 gas is pyrolyzed in advance to thereby supply arsenic alone either in an atomic or a molecular state. The GaAs layer is thus epitaxially grown on a single crystal silicon substrate in the crystal growing chamber, i.e., the reaction furnace in the apparatus, under an atmosphere comprising atomic or molecular arsenic at a temperature in the range of from 400.degree. to 650.degree. C. and at a vacuum degree of about 0.1 Pa. By thus epitaxially growing GaAs layer under an atmosphere comprising atomic or molecular arsenic, the intrusion of silicon impurity into the GaAs layer during its growth can be effectively prevented.