Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.

Abstract: In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.

Abstract: An electric power converting apparatus includes: a first controlling circuit board disposed inside a housing; and a second controlling circuit board disposed inside the housing on an opposite side of the first controlling circuit board from a power module, wherein: an inner plane of the first controlling circuit board is fixed to a cooler or the housing by a first fixing member on an opposite side of the first controlling circuit board from the second controlling circuit board; an inner plane of the second controlling circuit board is fixed to the housing by a second fixing member on an opposite side of the second controlling circuit board from the first controlling circuit board; and the first controlling circuit board and the second controlling circuit board are electrically connected on facing inner planes of the first controlling circuit board and the second controlling circuit board.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.

Abstract: An electric power converting apparatus includes: a first controlling circuit board disposed inside a housing; and a second controlling circuit board disposed inside the housing on an opposite side of the first controlling circuit board from a power module, wherein: an inner plane of the first controlling circuit board is fixed to a cooler or the housing by a first fixing member on an opposite side of the first controlling circuit board from the second controlling circuit board; an inner plane of the second controlling circuit board is fixed to the housing by a second fixing member on an opposite side of the second controlling circuit board from the first controlling circuit board; and the first controlling circuit board and the second controlling circuit board are electrically connected on facing inner planes of the first controlling circuit board and the second controlling circuit board.

Abstract: An insulated circuit board includes an insulated substrate, a first electrode, and a second electrode. A thin portion is formed in a corner portion, the corner portion being a region occupying, with regard to directions along outer edges from a vertex of at least one of the first and second electrodes in plan view, a portion of a length of the outer edges, and the thin portion has a thickness smaller than that of a region other than the thin portion. The thin portion in at least one of the first and second electrodes has a planar shape surrounded by first and second sides orthogonal to each other as portions of the outer edges from the vertex, and a curved portion away from the vertex of the first and second sides.

Abstract: An insulated circuit board includes an insulated substrate, a first electrode, and a second electrode. A thin portion is formed in a corner portion, the corner portion being a region occupying, with regard to directions along outer edges from a vertex of at least one of the first and second electrodes in plan view, a portion of a length of the outer edges, and the thin portion has a thickness smaller than that of a region other than the thin portion. The thin portion in at least one of the first and second electrodes has a planar shape surrounded by first and second sides orthogonal to each other as portions of the outer edges from the vertex, and a curved portion away from the vertex of the first and second sides.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.