Patents by Inventor Konstantinos Evangelos Spartiotis

Konstantinos Evangelos Spartiotis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9029793
    Abstract: An imaging device (6) for scan-imaging radiation includes an imaging cell array (3) comprising an array of detector cells generating charge in response to incident radiation (1) and an array of pixel circuits each pixel circuit associated with a respective detector cell. The pixel circuit includes circuitry for accumulating plural radiation hit on an associated detector cell and transfer circuitry shifting upon command the accumulated value of all pixels by one step in one dimension (e.g., row by row). The imaged object (2) moves at a speed VOPT (7) with respect to the radiation source and the imaging detector (or source and detector move at ?VOPT with respect to the object) on which the accumulated values are shifted are with VTDI (8). VTDI may equal VOPT in value and direction. Thus, a value is accumulated in a moving information package using multiple pixels (10) and referring directly to a location on the moving object. The accumulated values are read out along one edge of the pixel array.
    Type: Grant
    Filed: April 23, 2003
    Date of Patent: May 12, 2015
    Assignee: Siemens Aktiengesellschaft
    Inventors: Konstantinos Evangelos Spartiotis, Stefan Jurthe, Markku Tapio Eräluoto
  • Patent number: 8169522
    Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: May 1, 2012
    Assignee: Siemens Aktiengesellschaft
    Inventors: Risto Olavi Orava, Jouni Ilari Pyyhtia, Tom Gunnar Schulman, Miltiadis Evangelos Sarakinos, Konstantinos Evangelos Spartiotis
  • Patent number: 6856350
    Abstract: A semiconductor radiation imaging device includes an array of pixel cells having an array of pixel detectors which directly generate charge in response to incident radiation and a corresponding array of individually-addressable pixel circuits. Each pixel circuit is associated with a respective pixel detector for accumulating charge directly resulting from radiation incident on the pixel detector and includes threshold circuitry and charge accumulation circuitry. The threshold circuitry is configured to discard radiation hits on the pixel detector outside a predetermined threshold range, and the charge accumulation circuit is configured to accumulate charge directly resulting from a plurality of successive radiation hits on the respective pixel detector within the predetermined threshold range.
    Type: Grant
    Filed: June 9, 1997
    Date of Patent: February 15, 2005
    Assignee: Simage Oy
    Inventors: Risto Olavi Orava, Jouni Ilari Pyyhtia, Tom Gunnar Schulman, Miltiadis Evangelos Sarakinos, Konstantinos Evangelos Spartiotis
  • Publication number: 20040212708
    Abstract: An imaging device (6) for scan-imaging radiation includes an imaging cell array (3) comprising an array of detector cells generating charge in response to incident radiation (1) and an array of pixel circuits each pixel circuit associated with a respective detector cell. The pixel circuit includes circuitry for accumulating plural radiation hit on an associated detector cell and transfer circuitry shifting upon command the accumulated value of all pixels by one step in one dimension (e.g., row by row). The imaged object (2) moves at a speed VOPT (7) with respect to the radiation source and the imaging detector (or source and detector move at −VOPT with respect to the object) on which the accumulated values are shifted are with VTDI (8). VTDI may equal VOPT in value and direction. Thus, a value is accumulated in a moving information package using multiple pixels (10) and referring directly to a location on the moving object. The accumulated values are read out along one edge of the pixel array.
    Type: Application
    Filed: April 23, 2003
    Publication date: October 28, 2004
    Applicant: Simage, OY
    Inventors: Konstantinos Evangelos Spartiotis, Stefan Jurthe, Markku Tapio Eraluoto
  • Patent number: 6797960
    Abstract: A semiconductor radiation imaging assembly comprises a semiconductor imaging device including at least one image element detector. The imaging device is arranged to receive a bias for forming the at least one image element detector. The assembly also includes bias monitoring means for monitoring the bias for determining radiation incident on the image element detector. Preferably, the imaging device comprises a plurality of image element detectors the bias for at least some of which is monitored for determining incident radiation. More preferably, the bias for all the detector elements is monitored.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: September 28, 2004
    Assignee: Simage Oy
    Inventors: Konstantinos Evangelos Spartiotis, Stefan Jurthe, Jouni Pyythiä
  • Patent number: 6703617
    Abstract: A radiation imaging assembly includes a radiation imaging detector (160) including a plurality of image elements from which respective signals may be produced and a plurality of contacts for outputting said signals. A first substrate (154) is provided which comprises first and second major surfaces, said first major surface supporting said radiation imaging detector and providing support contacts for cooperating with respective contacts of said radiation imaging detector when mounted on said first surface. A second substrate for supporting electronic circuitry operable for said imaging device tile is also provided, said second substrate (158) disposed opposing said first substrate, and preferably disposed within the footprint of the first substrate.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: March 9, 2004
    Assignee: Simage Oy
    Inventors: Konstantinos Evangelos Spartiotis, Stefan Jurthe, Markku Eraluoto
  • Publication number: 20030183770
    Abstract: A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11, 12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.
    Type: Application
    Filed: March 19, 2003
    Publication date: October 2, 2003
    Applicant: Simage Oy
    Inventors: Konstantinos Evangelos Spartiotis, Hannele Heikkinen
  • Publication number: 20030164888
    Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.
    Type: Application
    Filed: March 11, 2003
    Publication date: September 4, 2003
    Applicant: Simage, OY
    Inventors: Risto Olavi Orava, Jouni Ilari Pyyhtia, Tom Gunnar Schulman, Miltiadis Evangelos Sarakinos, Konstantinos Evangelos Spartiotis
  • Patent number: 6509203
    Abstract: In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 &mgr;m and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 &mgr;m. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.
    Type: Grant
    Filed: October 14, 1997
    Date of Patent: January 21, 2003
    Assignee: Simage, Oy
    Inventors: Konstantinos Evangelos Spartiotis, Miltiadis Evangelos Sarakinos, Tom Gunnar Schulman
  • Publication number: 20020158207
    Abstract: A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11,12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.
    Type: Application
    Filed: June 24, 2002
    Publication date: October 31, 2002
    Applicant: Simage, OY.
    Inventors: Konstantinos Evangelos Spartiotis, Hannele Heikkinen
  • Publication number: 20020092970
    Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.
    Type: Application
    Filed: March 11, 2002
    Publication date: July 18, 2002
    Inventors: Jouni Ilari Pyyhtia, Konstantinos Evangelos Spartiotis
  • Publication number: 20020089595
    Abstract: An imaging device comprises a semiconductor substrate including an array of pixel cells. Each pixel cell comprising an individually addressable pixel circuit for accumulating charge resulting from radiation incident on a pixel detector. The pixel circuit and the pixel detector can either be implemented on a single substrate, or on two substrates bonded together. The charge storage device can be a transistor, for example one of a pair of FET transistors connected as a cascade amplification stage. An imaging plane can be made up of one imaging device or a plurality of imaging devices tiled to form a mosaic. The imaging devices may be configured as a slot for certain applications, the slit or slot being scanned over the imaging plane. Control electronics can include addressing logic for addressing individual pixel circuits for reading accumulated charge from the pixel circuits.
    Type: Application
    Filed: June 9, 1997
    Publication date: July 11, 2002
    Inventors: RISTO OLAVI ORAVA, JOUNI ILARI PYYHTIA, TOM GUNNAR SCHULMAN, MILTIADIS EVANGELOS SARAKINOS, KONSTANTINOS EVANGELOS SPARTIOTIS
  • Patent number: 6410922
    Abstract: A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11,12 on a surface of the substrate with openings 23 to the substrate surface at the contact positions; forming a layer of metal 24 over the layer(s) of material and the openings; and removing metal at 28 overlying the layer(s) of material to separate individual contacts. Optionally, a passivation layer 11 to be left between individual contacts on the substrate surface, may be applied during the method. A method according to the invention prevents etchants used for removing unwanted gold (or other contact matter) coming into contact with the surface of the substrate (e.g. CdZnTe) and causing degradation of the resistive properties of that substrate. The product of the method and uses thereof are also described.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: June 25, 2002
    Inventors: Konstantinos Evangelos Spartiotis, Hannele Heikkinen
  • Publication number: 20020043696
    Abstract: In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 &mgr;m and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 &mgr;m. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.
    Type: Application
    Filed: August 18, 1999
    Publication date: April 18, 2002
    Inventors: KONSTANTINOS EVANGELOS SPARTIOTIS, MILTIADIS EVANGELOS SARAKINOS, TOM GUNNAR SCHULMAN
  • Patent number: 6355923
    Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: March 12, 2002
    Assignee: Simage Oy
    Inventors: Jouni Ilari Pyyhtiä, Konstantinos Evangelos Spartiotis
  • Publication number: 20020000549
    Abstract: In a semiconductor imaging device, the distance between the edge of a substrate and an edge-most charge collection contact is made as small as possible, preferably less than 500 &mgr;m and/or less than ⅓ of the substrate thickness. Additionally or alternatively, a passivation layer is placed between the edge-most portion of the contact and the substrate surface and/or a field shaping conductor adjacent to the surface. A field shaping region may also be arranged outside the edge of the substrate and may encircle each detector device, or it may encircle an arrangement of several devices. In such an arrangement, the spacing between adjacent detectors should be less than 500 &mgr;m. A shield may also be used to shield the edge of each detector, or the edge region of the arrangement of several detectors, from incident radiation. Such arrangements can reduce the effect of edge image deterioration caused by strong field non-uniformities at the detector edges.
    Type: Application
    Filed: October 14, 1997
    Publication date: January 3, 2002
    Inventors: KONSTANTINOS EVANGELOS SPARTIOTIS, MILTIADIS EVANGELOS SARAKINOS, TOM GUNNAR SCHULMAN
  • Patent number: 6323475
    Abstract: An imaging device includes one detector substrate with a plurality of readout substrates connected thereto. The detector substrate has a bias contact on a first surface and a number of detector cell contacts on a second surface. The readout substrate includes a plurality of readout circuits. The readout substrates are all mechanically connected to the detector substrate with the readout circuits electrically connected to respective detector cell contacts. To allow for areas of the readout substrates with no readout circuits or gaps between readout circuits, conductive tracks lead from selected detector positions to offset readout circuit position.
    Type: Grant
    Filed: June 10, 1998
    Date of Patent: November 27, 2001
    Assignee: Simage Oy
    Inventors: Konstantinos Evangelos Spartiotis, Jouni Hari Pyyhtiä, Miltiadis Evangelos Sarakinos
  • Publication number: 20010025914
    Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.
    Type: Application
    Filed: April 25, 2001
    Publication date: October 4, 2001
    Inventors: Jouni Ilari Pyyhtia, Konstantinos Evangelos Spartiotis
  • Patent number: 6248990
    Abstract: A radiation imaging device includes an image cell array having an array of detector cells and an array of image cell circuits. Each image cell circuit is associated with a respective detector cell and includes counting. The image cell circuits may include threshold circuitry configured to receive signals generated in the respective detector cell and having values dependent on the incident radiation energy. The counting circuitry may be coupled to the threshold circuitry.
    Type: Grant
    Filed: October 10, 1997
    Date of Patent: June 19, 2001
    Assignee: Simage Oy
    Inventors: Jouni Ilari Pyyhtiä, Konstantinos Evangelos Spartiotis
  • Patent number: 6207944
    Abstract: A semi-conductor imaging device, for example for x-ray imaging, uses a detector substrate exposable to incident radiation and having a plurality of charge collection contacts for collecting charge therefrom, the detector substrate being arranged in front of a readout substrate carrying or comprising readout circuitry, the readout substrate using a first region with a respective cell circuit coupled to each charge collection contact for receiving signals from the detector substrate, and a second region with further circuitry, and such that the charge collection contacts are arranged over both the first and second regions of the readout substrate. A conductive path connects each charge collection contact over the second region with a respective terminal for contacting an input of a cell circuit in the first region. The invention enables the part of the detector substrate overlying the additional circuitry to be used as active detection area.
    Type: Grant
    Filed: March 6, 1998
    Date of Patent: March 27, 2001
    Assignee: Simage, O.Y.
    Inventors: Konstantinos Evangelos Spartiotis, Jouni Ilari Pyyhtiã, Tielang Cao