Abstract: A data processing system includes an application processor, a memory device, and a channel connecting the application processor and the memory device. The application processor encrypts first data using a first encryption key and a first initialization vector in response to a write command, and transmits first encrypted data to the memory device through the channel. The memory device decrypts the first encrypted data using a second encryption key and a second initialization vector, and stores first decrypted data in a memory core. The second encryption key and the second initialization vector are stored in the memory device. The first encryption key is the same as the second encryption key, and the first initialization vector is the same as the second initialization vector.

Abstract: A data processing system includes an application processor, a memory device, and a channel connecting the application processor and the memory device. The application processor encrypts first data using a first encryption key and a first initialization vector in response to a write command, and transmits first encrypted data to the memory device through the channel. The memory device decrypts the first encrypted data using a second encryption key and a second initialization vector, and stores first decrypted data in a memory core. The second encryption key and the second initialization vector are stored in the memory device. The first encryption key is the same as the second encryption key, and the first initialization vector is the same as the second initialization vector.

Abstract: Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.