Abstract: A dental apparatus includes a light irradiation unit for emitting a light to irradiate an oral cavity, an image capturing unit for image-capturing the oral cavity light irradiated by the light irradiation unit, and an output unit for outputting data for highlighting and displaying at least one of a plaque site and a calculus site on an image of the oral cavity based on an image captured result by the image capturing unit.

Abstract: There is provided a photodynamic diagnosis apparatus including a light source for generating a light pulse having a time width shorter than a fluorescence lifetime of a photosensitizer, and a detector for measuring a time change waveform of the fluorescence to the light pulse.

Abstract: A dental apparatus includes a light irradiation unit for emitting a light to irradiate an oral cavity, an image capturing unit for image-capturing the oral cavity light irradiated by the light irradiation unit, and an output unit for outputting data for highlighting and displaying at least one of a plaque site and a calculus site on an image of the oral cavity based on an image captured result by the image capturing unit.

Abstract: A photodynamic therapy apparatus as an estimating apparatus is an apparatus for irradiating a tissue having absorbed photo-sensitive pharmaceutical, the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser catheter, including a connector, a light source, and a light detection unit. The laser catheter is capable of being attached to and detached from the connector. The light source outputs the excitation light to the laser catheter via the connector. The light detection unit detects intensity or a spectrum of the fluorescence, the fluorescence being entered from the laser catheter via the connector, to estimate whether the tissue has changed because of reaction between the excitation light emitted from the tip portion of the laser catheter and the photo-sensitive pharmaceutical absorbed in the tissue.

Abstract: A dental apparatus includes a light irradiation unit for emitting a light to irradiate an oral cavity, an image capturing unit for image-capturing the oral cavity light irradiated by the light irradiation unit, and an output unit for outputting data for highlighting and displaying at least one of a plaque site and a calculus site on an image of the oral cavity based on an image captured result by the image capturing unit.

Abstract: There is provided a photodynamic diagnosis apparatus including a light source for generating a light pulse having a time width shorter than a fluorescence lifetime of a photosensitizer, and a detector for measuring a time change waveform of the fluorescence to the light pulse.

Abstract: A fluorescence life measuring apparatus, a fluorescence life measuring method and a program are described that can obtain fluorescence life using a simple configuration. The apparatus moves a stage on which a fluorescent material to be measured is placed, irradiates with excitation light the fluorescent material placed on the stage moved at a constant speed, images afterglow of emitted fluorescence caused by the excitation light, and uses an imaged image to detect the elapsed time from a fluorescence position and afterglow strength at a target afterglow position and calculate the fluorescence life.

Abstract: A dental apparatus includes a light irradiation unit for emitting a light to irradiate an oral cavity, an image capturing unit for image-capturing the oral cavity light irradiated by the light irradiation unit, and an output unit for outputting data for highlighting and displaying at least one of a plaque site and a calculus site on an image of the oral cavity based on an image captured result by the image capturing unit.

Abstract: There is provided a dental apparatus including a light source for emitting a light to irradiate at least one of a tooth, a gum, a plaque and a calculus of an oral cavity, a light detector for detecting fluorescence from the oral cavity emitted to the light irradiated from the light source, and a control unit for outputting first data for visualizing a temporal change in a fluorescence intensity based on the fluorescence detected by the light detector. Also, there is provided a calculation method including irradiating an excited light, detecting a fluorescence intensity, and calculating a temporal change in the fluorescence intensity in a depth direction.

Abstract: [Object] To provide a calculation apparatus and a calculation method capable of calculating pharmaceutical concentration in a tissue in real time. [Solving Means] A photodynamic therapy apparatus as a calculation apparatus is an apparatus for irradiating a tissue having absorbed photo-sensitive pharmaceutical, the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser catheter, including a connector, a light source, and a light detection unit. The laser catheter is capable of being attached/detached to/from the connector. The light source outputs the excitation light to the laser catheter via the connector. The light detection unit detects intensity of the fluorescence, the fluorescence being entered from the laser catheter via the connector, to calculate concentration of the photo-sensitive pharmaceutical in a tissue, the tip portion of the laser catheter contacting the tissue.

Abstract: A photodynamic therapy apparatus as a determining apparatus is the photodynamic therapy apparatus for irradiating a tissue having absorbed photo-sensitive pharmaceutical, the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, or a tissue absorbing the excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser catheter, including a connector, a light source, and a light detection unit. The laser catheter is capable of being attached/detached to/from the connector. The light source outputs the excitation light to the laser catheter via the connector. The light detection unit detects intensity or a spectrum of the fluorescence, the fluorescence being entered from the laser catheter via the connector, to determine whether the tip portion of the laser catheter contacts the tissue or not.

Abstract: A photodynamic therapy apparatus as an estimating apparatus is an apparatus for irradiating a tissue having absorbed photo-sensitive pharmaceutical, the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser the catheter, including a connector, a light source, and a light detection unit. The laser the catheter is capable of being attached/detached to/from the connector. The light source outputs the excitation light to the laser the catheter via the connector. The light detection unit detects intensity or a spectrum of the fluorescence, the fluorescence being entered from the laser the catheter via the connector, to estimate whether the tissue has changed because of reaction between the excitation light emitted from the tip portion of the laser the catheter and the photo-sensitive pharmaceutical absorbed in the tissue.

Abstract: A fluorescence life measuring apparatus, a fluorescence life measuring method and a program that can obtain fluorescence life using a simple configuration are proposed. The apparatus moves a stage on which a fluorescent material to be measured is placed, irradiates with excitation light the fluorescent material placed on the stage moved at a constant speed, images afterglow of emitted fluorescence caused by the excitation light, and uses an imaged image to detect the elapsed time from a fluorescence position and afterglow strength at a target afterglow position and calculate the fluorescence life.

Abstract: A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Bex1Mgx2Znx3Te (0<x1<1, 0?x2<1, 0<x3<1, x1+x2+x3=1) and a second semiconductor layer mainly including Bex4Mgx5Znx6Te (0<x4<1, 0<x5<1, 0?x6<1, x4+x5+x6=1).

Abstract: Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

Abstract: An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

Abstract: Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain.

Abstract: Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

Abstract: The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm?3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm?3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime. Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2 ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10 ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm?3 or more is obtained when a single layer is inserted at suitable intervals.

Abstract: The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below.