Patents by Inventor Kota Umezawa
Kota Umezawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197447Abstract: A method of forming a crystalline silicon film includes forming a first amorphous silicon film on a substrate, forming a crystal nucleation film in which crystal nuclei of silicon are formed by performing a first annealing on the substrate having the first amorphous silicon film formed thereon, performing etching with an etching gas, forming a second amorphous silicon film on the crystal nuclei remaining after the etching, and forming a crystalline silicon film by performing a second annealing on the substrate after the forming of the second amorphous silicon film to grow the crystal nuclei.Type: ApplicationFiled: December 20, 2022Publication date: June 22, 2023Inventors: Kota UMEZAWA, Yoshimasa WATANABE
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Publication number: 20230175115Abstract: A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.Type: ApplicationFiled: March 29, 2021Publication date: June 8, 2023Inventors: Shuji AZUMO, Kota UMEZAWA, Katsutoshi ISHII, Akira SHIMIZU, Akinobu TERAMOTO, Tomoyuki SUWA, Yasuyuki SHIRAI, Takezo MAWAKI
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Patent number: 9966258Abstract: There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.Type: GrantFiled: January 28, 2015Date of Patent: May 8, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Kota Umezawa, Yosuke Watanabe
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Publication number: 20160265136Abstract: A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, includes performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate, and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.Type: ApplicationFiled: March 1, 2016Publication date: September 15, 2016Inventors: Kota UMEZAWA, Yosuke WATANABE
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Publication number: 20150221512Abstract: There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.Type: ApplicationFiled: January 28, 2015Publication date: August 6, 2015Inventors: Kota UMEZAWA, Yosuke WATANABE
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Publication number: 20140318457Abstract: A film forming apparatus includes: a processing chamber configured to accommodate a substrate to be processed, the processing chamber performing a film forming process forming a compound semiconductor film; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel.Type: ApplicationFiled: April 25, 2014Publication date: October 30, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Kota UMEZAWA, Yosuke WATANABE
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Publication number: 20140038394Abstract: A method for forming a compound semiconductor film on a substrate to be processed, which includes: mounting a plurality of substrates to be processed on a substrate mounting jig; loading the substrates to be processed into a processing chamber; and heating the substrates to be processed loaded into the processing chamber; supplying a gas containing one element that constitutes a compound semiconductor, and another gas containing another element that constitutes the compound semiconductor and being different from the one element, into the processing chamber in which the substrates to be processed are loaded; and forming the compound semiconductor film on each of the substrates to be processed.Type: ApplicationFiled: August 2, 2013Publication date: February 6, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Yosuke WATANABE, Kota UMEZAWA
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Publication number: 20120164848Abstract: A plasma-assisted ALD method using a vertical furnace and being performed by repeating a cycle until a desired film thickness is obtained is disclosed. The cycle comprises introducing a source gas containing a source to be nitrided, adsorbing, purging, introducing a nitriding gas and nitriding the source, and then, purging. A flow rate of a second carrier gas during introduction of the nitriding gas is reduced relative to that of a first carrier gas during introduction of the source gas. Particularly, a flow ratio of NH3 gas as the nitriding gas to N2 gas as the second carrier gas is 50:3 or less.Type: ApplicationFiled: December 28, 2011Publication date: June 28, 2012Applicants: Tokyo Electron Limited, Elpida Memory, Inc.Inventors: Motoki FUJII, Masanobu MATSUNAGA, Kazuya YAMAMOTO, Kota UMEZAWA
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Patent number: 8183158Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.Type: GrantFiled: October 17, 2007Date of Patent: May 22, 2012Assignee: Tokyo Electron LimitedInventors: Masahiko Tomita, Kota Umezawa, Ryou Son, Toshiharu Nishimura
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Publication number: 20110281443Abstract: The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O2 gas and an O3 gas, and a second oxidizing gas comprising at least one selected from the group consisting of a H2O gas and a H2O2 gas, thereby forming a silicon oxide film on a surface of the object to be processed.Type: ApplicationFiled: May 12, 2011Publication date: November 17, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Pao-Hwa CHOU, Kota UMEZAWA, Yosuke WATANABE, Masayuki HASEGAWA
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Patent number: 7981809Abstract: A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.Type: GrantFiled: December 12, 2005Date of Patent: July 19, 2011Assignee: Tokyo Electron LimitedInventors: Tetsuya Shibata, Yutaka Takahashi, Kota Umezawa, Masahiko Tomita
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Patent number: 7964241Abstract: An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.Type: GrantFiled: August 28, 2007Date of Patent: June 21, 2011Assignee: Tokyo Electron LimitedInventors: Kazuhide Hasebe, Pao-Hwa Chou, Kota Umezawa, Kentaro Kadonaga, Hao-Hsiang Chang
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Patent number: 7674724Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.Type: GrantFiled: June 24, 2008Date of Patent: March 9, 2010Assignee: Tokyo Electron LimitedInventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kota Umezawa
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Patent number: 7605095Abstract: A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.Type: GrantFiled: February 6, 2008Date of Patent: October 20, 2009Assignee: Tokyo Electron LimitedInventors: Toshiyuki Ikeuchi, Kota Umezawa, Tetsuya Shibata
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Publication number: 20080311760Abstract: A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas.Type: ApplicationFiled: June 6, 2008Publication date: December 18, 2008Inventors: Nobutake Nodera, Masanobu Matsunaga, Kazuhide Hasebe, Kota Umezawa, Pao-Hwa Chou
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Patent number: 7452826Abstract: An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.Type: GrantFiled: August 11, 2006Date of Patent: November 18, 2008Assignee: Tokyo Electron LimitedInventors: Kazuhide Hasebe, Kota Umezawa, Yutaka Takahashi
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Publication number: 20080268654Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.Type: ApplicationFiled: June 24, 2008Publication date: October 30, 2008Inventors: Keisuke Suzuki, Toshiyuki Ikouchi, Kota Umezawa
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Patent number: 7419550Abstract: An oxidizing method for includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form active oxygen species and active hydroxyl species; and an oxidizing step of oxidizing surfaces of the plurality of objects.Type: GrantFiled: February 17, 2005Date of Patent: September 2, 2008Assignee: Tokyo Electron LimitedInventors: Keisuke Suzuki, Toshiyuki Ikeuchi, Kota Umezawa
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Publication number: 20080200038Abstract: A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.Type: ApplicationFiled: February 6, 2008Publication date: August 21, 2008Inventors: Toshiyuki Ikeuchi, Kota Umezawa, Tetsuya Shibata
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Publication number: 20080093023Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.Type: ApplicationFiled: October 17, 2007Publication date: April 24, 2008Inventors: Masahiko Tomita, Kota Umezawa, Ryou Son, Toshiharu Nishimura