Patents by Inventor Kotaro Mitsui

Kotaro Mitsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200041570
    Abstract: A trained neural network model is a neural network model which has been trained based on Nyquist plots of a plurality of modules of which full charge capacity is within a reference range. A processing system determines to which of a first group of modules of which full charge capacity is within the reference range and a second group of modules of which full charge capacity is out of the reference range a module belongs, based on discriminant analysis in which at least one feature value extracted from the Nyquist plot of the module is adopted as an explanatory variable. When the processing system determines that the module M belongs to the first group, the processing system estimates a full charge capacity of the module by using the trained neural network model.
    Type: Application
    Filed: July 23, 2019
    Publication date: February 6, 2020
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Junta IZUMI, Masahiko MITSUI, Juni YASOSHIMA, Kotaro SHIBUYA
  • Publication number: 20200033414
    Abstract: A battery information processing system processes information for estimating a full charge capacity of a module. The battery information processing system includes a storage device configured to store a trained neural network model and an analysis device configured to estimate a full charge capacity of a secondary battery from a result of measurement of an AC impedance of the module by using the trained neural network model. The trained neural network model includes an input layer given a numeric value for each pixel of an estimation image in which a Nyquist plot representing the result of measurement of the AC impedance of the module is drawn in a region consisting of a predetermined number of pixels.
    Type: Application
    Filed: July 15, 2019
    Publication date: January 30, 2020
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Junta IZUMI, Masahiko MITSUI, Juni YASOSHIMA, Kotaro SHIBUYA
  • Patent number: 5602414
    Abstract: In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.
    Type: Grant
    Filed: June 16, 1994
    Date of Patent: February 11, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kotaro Mitsui, Zenpei Kawazu, Kazuo Mizuguchi, Seiji Ochi, Yuji Ohkura, Norio Hayafuji, Hirotaka Kizuki, Mari Tsugami, Akihiro Takami, Manabu Katoh
  • Patent number: 5145793
    Abstract: A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conducitivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate.
    Type: Grant
    Filed: April 12, 1991
    Date of Patent: September 8, 1992
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Nippon Telegraph and Telephone Corporation
    Inventors: Takahiko Oohara, Yoshiro Ohmachi, Yoshiaki Kadota, Kotaro Mitsui, Nobuyoshi Ogasawara, Takashi Nishimura
  • Patent number: 5131956
    Abstract: A photovoltaic semiconductor device includes a first conductivity type silicon substrate having a first main surface, a first conductivity type compound semiconductor layer disposed on a first, major portion of the first main surface of the silicon substrate, a second conductivity type compound semiconductor layer disposed on the first conductivity type compound semiconductor layer, a first electrode connected to the second conductivity type compound semiconductor layer, a portion of the first electrode being disposed on a second, minor portion of the first main surface of the silicon substrate with an intervening insulating film, and a second electrode disposed on a third, minor portion of the first main surface of the silicon substrate.
    Type: Grant
    Filed: March 28, 1991
    Date of Patent: July 21, 1992
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Nippon Telegraph and Telephone Corporation
    Inventors: Takahiko Oohara, Masaaki Usui, Nobuyoshi Ogasawara, Kotaro Mitsui
  • Patent number: 5121183
    Abstract: A light responsive semiconductor includes a second conductivity type semiconductor substrate, a photoelectric conversion layer comprising semiconductor layers having a pn junction, which is disposed on the second conductivity type semiconductor substrate, a buffer layer comprising a second conductivity type semiconductor layer having a larger energy band gap than that of the photoelectric conversion layer. The element further includes a light reflection layer comprising a semiconductor layer which is disposed between the second conductivity type semiconductor substrate and the buffer layer. Alternatively, a light reflection layer which is a buffer layer is disposed between a photoelectric conversion layer and a semiconductor substrate.
    Type: Grant
    Filed: December 2, 1988
    Date of Patent: June 9, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Nobuyoshi Ogasawara, Kotaro Mitsui
  • Patent number: 4897123
    Abstract: A solar cell includes a semiconductor substrate of one conductivity type, at least one separation region of opposite conductivity type extending through the substrate, a first semiconductor layer disposed on the front of the substrate, an opposite conductivity type second semiconductor layer disposed on the first layer to form a rectifying junction, the second layer being in electrical communication with the separation region, a first electrode disposed on the rear surface of the substrate and a second electrode in electrical communication with the second layer and extending to the rear of the substrate. The solar cell may be made by diffusing the separation region in the substrate, epitaxially growing the first and second layers successively on the front of the substrate, establishing electrical communication between the second layer and the separation region at the front, and forming the first and seocnd electrodes.
    Type: Grant
    Filed: September 29, 1988
    Date of Patent: January 30, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kotaro Mitsui
  • Patent number: 4673476
    Abstract: An antireflective film (7, 8) for photoelectric devices comprises at least a layer having a refractive index being the largest on the side abutting on the light receiving surface (2a) or the light emitting surface of a photoelectric device and continuously decreasing according to the distance outward from said side.
    Type: Grant
    Filed: October 21, 1986
    Date of Patent: June 16, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kotaro Mitsui, Mari Kato, Takao Oda, Susumu Yoshida
  • Patent number: 4649088
    Abstract: An antireflective film (7, 8) for photoelectric devices comprises at least a layer having a refractive index being the largest on the side abutting on the light receiving surface (2a) or the light emitting surface of a photoelectric device and continuously decreasing according to the distance outward from said side.
    Type: Grant
    Filed: February 22, 1985
    Date of Patent: March 10, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kotaro Mitsui, Mari Kato, Takao Oda, Susumu Yoshida
  • Patent number: 4493941
    Abstract: In a hetero-face type solar cell, an impurity concentration distribution is formed in the cell element so as to provide an accelerative electric field therein. As a result, electrons are accelerated by the field toward the PN junction, and even under the application of radiation to the cell, a highly efficient solar cell may be achieved.
    Type: Grant
    Filed: August 24, 1983
    Date of Patent: January 15, 1985
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshinori Yukimoto, Kotaro Mitsui