Patents by Inventor Kou Hasegawa

Kou Hasegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7922783
    Abstract: There are provided a polishing pad which exhibits excellent polishing stability and excellent slurry retainability during polishing and even after dressing, can prevent a reduction in polishing rate effectively and is also excellent in an ability to flatten an substrate to be polished, and a method for producing the polishing pad. The method comprises dispersing water-soluble particles such as ?-cyclodextrin into a crosslinking agent such as a polypropylene glycol so as to obtain a dispersion, mixing the dispersion with a polyisocyanate such as 4,4?-diphenylmethane diisocyanate and/or an isocyanate terminated urethane prepolymer, and reacting the mixed solution so as to obtain a polishing pad having the water-soluble particles dispersed in the matrix.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: April 12, 2011
    Assignee: JSR Corporation
    Inventors: Fujio Sakurai, Iwao Mihara, Yoshinori Igarashi, Kou Hasegawa
  • Publication number: 20080313967
    Abstract: There are provided a polishing pad which exhibits excellent polishing stability and excellent slurry retainability during polishing and even after dressing, can prevent a reduction in polishing rate effectively and is also excellent in an ability to flatten an substrate to be polished, and a method for producing the polishing pad. The method comprises dispersing water-soluble particles such as ?-cyclodextrin into a crosslinking agent such as a polypropylene glycol so as to obtain a dispersion, mixing the dispersion with a polyisocyanate such as 4,4?-diphenylmethane diisocyanate and/or an isocyanate terminated urethane prepolymer, and reacting the mixed solution so as to obtain a polishing pad having the water-soluble particles dispersed in the matrix.
    Type: Application
    Filed: August 25, 2008
    Publication date: December 25, 2008
    Applicant: JSR CORPORATION
    Inventors: Fujio SAKURAI, Iwao Mihara, Yoshinori Igarashi, Kou Hasegawa
  • Patent number: 7323415
    Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (?-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: January 29, 2008
    Assignee: JSR Corporation
    Inventors: Hiroshi Shiho, Yukio Hosaka, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 7217305
    Abstract: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, ?-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 ?m and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: May 15, 2007
    Assignee: JSR Corporation
    Inventors: Kou Hasegawa, Hozumi Satou, Osamu Ishikawa, Yukio Hosaka
  • Patent number: 7201641
    Abstract: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, ?-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 ?m and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: April 10, 2007
    Assignee: JSR Corporation
    Inventors: Kou Hasegawa, Hozumi Satou, Osamu Ishikawa, Yukio Hosaka
  • Patent number: 7183213
    Abstract: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: February 27, 2007
    Assignee: JSR Corporation
    Inventors: Hiroshi Shiho, Yukio Hosaka, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 7097550
    Abstract: A chemical mechanical polishing pad which can be advantageously used for the polishing of a metal film or the polishing of an insulating film, provides a flat polished surface, enables slurry to be efficiently removed, has sufficiently long service life, can provide a high polishing rate and has the effect of reducing the number of scratches. This polishing pad has one or more grooves on its polishing surface, wherein the groove(s) is/are formed in the polishing surface in such a manner that it/they intersect(s) a single virtual straight line extending from the center portion toward the peripheral portion of the polishing surface a plurality of times and has/have a width of 0.1 to 1.5 mm and a depth of 0.9 to 9.8 mm, the shortest distance between adjacent intersections between it/them and the virtual straight line is 0.3 to 2.0 mm, and the ratio of the depth of the groove(s) to the thickness of the polishing pad is 1/7 to 1/1.1.
    Type: Grant
    Filed: May 20, 2005
    Date of Patent: August 29, 2006
    Assignee: JSR Corporation
    Inventors: Kouji Kawahara, Kou Hasegawa, Fujio Sakurai
  • Patent number: 7077879
    Abstract: An object of the invention is to provide a polishing pad having the excellent slurry retaining properties and the large removal rate and a composition for a polishing pad which can form such the polishing pad. A composition for polishing pad of the invention is comprising a water-insoluble matrix material containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix material. The elongation remaining after breaking is 100% or less when a test piece comprising the water-insoluble matrix material is broken at 80° C. according to JIS K 6251. A polishing pad of the invention is that at least a part of the polishing pad comprises the composition for polishing pad.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: July 18, 2006
    Assignee: JSR Corporation
    Inventors: Toshihiro Ogawa, Kou Hasegawa, Nobuo Kawahashi
  • Publication number: 20060116054
    Abstract: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, ?-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 ?m and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained.
    Type: Application
    Filed: November 29, 2005
    Publication date: June 1, 2006
    Applicant: JSR CORPORATION
    Inventors: Kou Hasegawa, Hozumi Satou, Osamu Ishikawa, Yukio Hosaka
  • Publication number: 20060075686
    Abstract: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, ?-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 ?m and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained.
    Type: Application
    Filed: November 29, 2005
    Publication date: April 13, 2006
    Applicant: JSR CORPORATION
    Inventors: Kou Hasegawa, Hozumi Satou, Osamu Ishikawa, Yukio Hosaka
  • Patent number: 7001252
    Abstract: An object of the present invention is to provide a polishing body, wherein the abrasive in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case a large quantity of the abrasive are contained. A polishing part constituting the polishing body in the invention is produced obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, ?-methylstyrenedimer, and t-dodecylmercaptan in an autoclave, making the mixture react for 16 hours at 75° C. to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 ?m and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: February 21, 2006
    Assignee: JSR Corporation
    Inventors: Kou Hasegawa, Hozumi Satou, Osamu Ishikawa, Yukio Hosaka
  • Patent number: 6992123
    Abstract: A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like. This polishing pad has good slurry retainability even if using slurries different in pH and also has excellent polishing properties such as a polishing rate and planarity.
    Type: Grant
    Filed: November 5, 2003
    Date of Patent: January 31, 2006
    Assignee: JSR Corporation
    Inventors: Hiroshi Shiho, Hiromi Aoi, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 6976910
    Abstract: A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.
    Type: Grant
    Filed: May 21, 2004
    Date of Patent: December 20, 2005
    Assignee: JSR Corporation
    Inventors: Yukio Hosaka, Hiroshi Shiho, Kou Hasegawa, Nobuo Kawahashi
  • Publication number: 20050260942
    Abstract: A chemical mechanical polishing pad which can be advantageously used for the polishing of a metal film or the polishing of an insulating film, provides a flat polished surface, enables slurry to be efficiently removed, has sufficiently long service life, can provide a high polishing rate and has the effect of reducing the number of scratches. This polishing pad has one or more grooves on its polishing surface, wherein the groove(s) is/are formed in the polishing surface in such a manner that it/they intersect(s) a single virtual straight line extending from the center portion toward the peripheral portion of the polishing surface a plurality of times and has/have a width of 0.1 to 1.5 mm and a depth of 0.9 to 9.8 mm, the shortest distance between adjacent intersections between it/them and the virtual straight line is 0.3 to 2.0 mm, and the ratio of the depth of the groove(s) to the thickness of the polishing pad is 1/7 to 1/1.1.
    Type: Application
    Filed: May 20, 2005
    Publication date: November 24, 2005
    Applicant: JSR Corporation
    Inventors: Kouji Kawahara, Kou Hasegawa, Fujio Sakurai
  • Publication number: 20050227489
    Abstract: Disclosed is a CMP pad which is abrasive-free and comprises cells and/or a recessed portion-forming material both having an average diameter ranging from 0.05 to 290 ?m and occupying a region ranging from 0.1% by volume to 5% by volume based on an entire volume of the pad, and an organic material.
    Type: Application
    Filed: February 4, 2004
    Publication date: October 13, 2005
    Inventors: Gaku Minamihara, Yoshikuni Tateyama, Hiroyuki Yano, Tomoo Koumura, Kou Hasegawa
  • Publication number: 20050222336
    Abstract: A chemical mechanical polishing pad comprising a water-insoluble matrix which comprises (A) a styrene polymer and (B) a diene polymer. A method for producing the above chemical mechanical polishing pad, the method comprising the steps of preparing a composition comprising (A) a styrene polymer, (B) a diene polymer and (C) a crosslinking agent, shaping the above composition into a predetermined shape, and heating the composition during or after shaping to cure it. A chemical mechanical polishing process which comprises polishing a surface to be polished of an object to be polished by use of the chemical mechanical polishing pad. According to the present invention, it is possible to provide a chemical mechanical polishing pad which can be suitably applied to polishing of metal film and insulation film, particularly to an STI technique, provides a flat polished surface, can provide a high polishing rate and has a satisfactory useful life.
    Type: Application
    Filed: February 7, 2005
    Publication date: October 6, 2005
    Applicant: JSR Corporation
    Inventors: Takahiro Okamoto, Hiroyuki Miyauchi, Kouji Kawahara, Hiroshi Shiho, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 6855034
    Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.
    Type: Grant
    Filed: April 24, 2002
    Date of Patent: February 15, 2005
    Assignee: JSR Corporation
    Inventor: Kou Hasegawa
  • Patent number: 6848974
    Abstract: An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: February 1, 2005
    Assignee: JSR Corporation
    Inventors: Kou Hasegawa, Yukio Hosaka
  • Publication number: 20050014376
    Abstract: A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 ?m or less.
    Type: Application
    Filed: July 16, 2004
    Publication date: January 20, 2005
    Applicant: JSR Corporation
    Inventors: Hiroshi Shiho, Yukio Hosaka, Kou Hasegawa, Nobuo Kawahashi
  • Publication number: 20050003749
    Abstract: A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.
    Type: Application
    Filed: May 21, 2004
    Publication date: January 6, 2005
    Applicant: JSR CORPORATION
    Inventors: Yukio Hosaka, Hiroshi Shiho, Kou Hasegawa, Nobuo Kawahashi
  • Patent number: 5066790
    Abstract: A method of producing prepolymeric materials from lignin is disclosed. The method uses lignin which has been hydroxyalkyl modified, such that the lignin is substantially non-phenolic and solvent soluble and/or liquid. The modified lignin is reacted with materials which yield prepolymers which may be polymerized according to known methods to produce useful polymers.
    Type: Grant
    Filed: January 4, 1990
    Date of Patent: November 19, 1991
    Assignees: Center for Innovative Technology, Virginia Polytechnic Institute and State University
    Inventors: Wolfgang G. Glasser, Willer De Oliveira, Stephen S. Kelley, Li S. Nieh