Patents by Inventor Kouichi MURAKAWA

Kouichi MURAKAWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10340147
    Abstract: A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film.
    Type: Grant
    Filed: January 14, 2016
    Date of Patent: July 2, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Kouichi Murakawa
  • Publication number: 20160126100
    Abstract: A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film.
    Type: Application
    Filed: January 14, 2016
    Publication date: May 5, 2016
    Applicant: Renesas Electronics Corporation
    Inventor: Kouichi MURAKAWA
  • Patent number: 9263280
    Abstract: A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: February 16, 2016
    Assignee: Renesas Electronics Corporation
    Inventor: Kouichi Murakawa
  • Publication number: 20150155174
    Abstract: A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film.
    Type: Application
    Filed: February 10, 2015
    Publication date: June 4, 2015
    Applicant: Renesas Electronics Corporation
    Inventor: Kouichi MURAKAWA
  • Patent number: 9000538
    Abstract: A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: April 7, 2015
    Assignee: Renesas Electronics Corporation
    Inventor: Kouichi Murakawa
  • Publication number: 20120001257
    Abstract: A downsized semiconductor device having an excellent reverse characteristic, and a method of manufacturing the semiconductor device is sought to improve. The semiconductor device comprises a semiconductor body having a polygonal contour. An active area is formed in the semiconductor body. An EQR electrode is formed so as to surround the active area and to have curved portions of the EQR electrode along the corners of the semiconductor body. An interlayer insulating film is formed to cover the active area and the EQR electrode. The EQR electrode is embedded in the interlayer insulating film around the active area. EQR contacts are in contact with the curved portions of the EQR electrode and the semiconductor body outside the curved portions, and have at least side walls covered with the interlayer insulating film.
    Type: Application
    Filed: June 21, 2011
    Publication date: January 5, 2012
    Applicant: Renesas Electronics Corporation
    Inventor: Kouichi MURAKAWA