Abstract: A thin film transistor protection circuit includes a outer short-circuit line formed around a pixel electrode driving thin film transistor on an array substrate, and a discharging thin film transistor having a gate electrode and a current path connected between a wiring line connected to the pixel electrode driving thin film transistor and the outer short-circuit line. The protection circuit further includes a charging circuit for charging the gate electrode of the discharging thin film transistor according to a difference in potential between the conductive and wiring lines.

Abstract: An active-matrix type liquid-crystal display comprising a matrix display panel including a glass substrate, pixel electrodes formed on the substrate, signal lines formed on the substrate, gate lines formed on the substrate, and switching elements formed on the substrate, signal-line drive ICs for applying signal voltages to the signal lines, and gate-line drive ICs for driving the switching elements. The display further comprises power-supply potential control circuits for changing the first and second power-supply potentials (VDD, VSS) of the signal-line drive ICs, each by a predetermined value, in accordance with the signal voltages to be applied to the pixel electrodes.

Abstract: A magnetron plasma etching system has a plurality of processing chambers connected to a common transfer chamber. Each processing chamber has a pair of counter electrodes for generating an electric field and a magnet mechanism for generating a magnetic field having an N-S axis crossing the electric field. All magnetic fields are rotated in the same plane. The rotation of the magnetic fields is controlled by a controller. When one of the magnetic fields is rotated, the other magnetic fields are rotated at equal speed such that the directions of N-S axes thereof are parallel and identical to that of the one of the magnetic fields.

Abstract: A semiconductor device inspection system having an improved measurement accuracy and in operability. A semiconductor device is observed from the bottom surface side. First, image data obtained upon image pickup under infrared illumination is converted into first left-to-right-reversed image data corresponding to a left-to-right-reversed image and the first reversed image data is stored. Then an image is obtained under no illumination from very weak light emitted from an abnormal portion when a bias is applied to the semiconductor device. Image data of the very weak light image is then converted into second left-to-right-reversed image data corresponding to a left-to-right-reversed image. The first and second left-to-right-reversed image data are superimposedly added to each other and a superimposed image is displayed with the abnormal portion being superimposed on a chip pattern as seen from the top surface of the semiconductor device.

Abstract: An object of the present invention is to provide method and apparatus for manufacturing medium or low carbon ferromanganese at reduced running costs.In order to achieve the above object, the present invention resides in charging molten high carbon ferromanganese into a refining vessel of a top blowing type, and blowing oxygen gas on the surface of the molten high carbon ferromanganese from above and injecting a mixed gas having the following composition into the molten high carbon ferromanganese from bottom. The mixed gas composition comprises 65-100% of CO, 0-25% of CO.sub.2 and 0-10% of N.sub.2. In a case, argon gas is used as the bottom-blown gas.

Abstract: A highly-integrated semiconductor IC device includes a semiconductive substrate, on which an internal function circuit is arranged to have a first plurality of input terminals and a second plurality of output terminals. A logic circuit is arranged on the substrate and is connected to the internal circuit through the output terminals. The logic circuit has a third plurality of output terminals, which are less in number than the outputs of the internal circuit. These logic output terminals are coupled to the same number of inspection terminals, which are adapted to be coupled to a known electric inspection tool. The logic circuit processes the voltage signals appearing at the output terminals of the internal circuit so as to cause these signals to decrease in number. The output signals of the logic circuit are sent to the inspection terminals as monitor signals, based on which an inspection is carried out to determine whether the internal circuit operates normally.

Abstract: A vacuum circuit breaker comprising an external coil which is arranged outside a vacuum interrupter, and a power supply circuit which causes current to flow through the external coil. An overcurrent flowing through the main circuit of the circuit breaker, which leads to a load, is detected by an overcurrent tripping device so as to separate the movable electrode of the vacuum interrupter from the fixed electrode thereof and to subject a striking electric arc to a magnetic flux generated axially of the vacuum interrupter by the electrodes themselves. Thereafter, a trigger gap is ignited by a signal delivered from the overcurrent tripping device, so as to introduce a reverse current into the vacuum interrupter. Herein, the trigger gap is ignited by a signal delivered from the overcurrent tripping device, in order that the zero point of currents may be formed at the point of time at which the axial magnetic flux has been canceled by the resulting current of the external coil.

Abstract: An active matrix liquid crystal display device in a normally white mode comprises two bus lines corresponding to pixel electrodes. The bus lines are formed under the pixel electrodes with an insulating layer interposed therebetween. First and second alternating current voltages whose phases differ from each other by 180.degree., are applied to the bus lines. The first and second voltages satisfies an equation of C.sub.1 .multidot.V.sub.1 =C.sub.2 .multidot.V.sub.2 (V.sub.1 and V.sub.2 represent first and second voltages, respectively, and C.sub.1 and C.sub.2 represent capacitances between the bus lines and the pixel electrodes, respectively). A pixel electrode having represented a bright spot defect is short-circuited with one of the bus lines, and the voltage of the bus line is applied to the pixel electrode. The bright spot defect is therefore changed to a dark spot defect.

Abstract: The present invention provides a strong heat seal to a thermoplastic polyester container which can withstand hot water treatment such as retorting, and to a heat sealed container. A heat-sealable closure is also provided. It is composed of a laminate consisting of a heat-seal layer comprising as a main component a copolymerized polyester resin having a softening temperature of 120.degree. C. and a glass-transition temperature of 30.degree. to 85.degree. C., a metal substrate, and an epoxy-phenol resin primer layer interposed between them.Preferably, the container has a heat seal portion composed of a thermoplastic polyester having a fusion temperature in the crystalline state of at least 200.degree. C. This polyester portion is oriented and crystallized or heat-crystallized.

Abstract: A contact structure for a vacuum circuit breaker has an electrically insulating vacuum vessel, fixed and movable contact units sealed in the vacuum vessel and shield members surrounding the fixed and movable contact units in the vacuum vessel. Particles of a metal are applied to at least a part of the inner surface of the vacuum vessel.

Abstract: In a transmission liquid crystal display apparatus, light rays emitted from a light source and reflected from a mirror are collimated by a collimator lens and incident in a liquid cell structure through a polarization layer. The light rays emerged from the structure are transmitted through an another polarization layer and diffused by a diffusion layer. The diffusion light rays pass through a filter layer to a viewer.

Abstract: A liquid crystal display device includes a matrix array substrate, an upper substrate, and a liquid crystal layer sealed between the substrates. The matrix array substrate has a plurality of first display electrodes connected to thin film transistors which are arranged on a substrate, and an insulation film covering the first display electrodes and the thin film transistors. A plurality of second display electrodes are arranged on the insulation film and face the corresponding first display electrodes to form a capacity connection therewith. The second display electrodes are applied with potentials by the first display electrodes. A transmission factor of the liquid crystal layer is variable in accordance with a potential applied between the second display electrodes and a transparent conductive film of the upper substrate.

Abstract: A photo and heat sensitive recording medium has a front side coated with a layer of photo-curable composition which has photo-curability and heat fusibility in an uncured state. In an image recording method, the recording medium is exposed to light on the basis of image information, to photo-cure light-illuminated areas of the layer of photo-curable composition. Subsequently, the recording medium is superimposed upon a side of a subject being transferred. The superimposed recording medium and subject are heated to transfer an image corresponding to uncured areas on the recording medium, onto the side of the subject.

Abstract: A method for manufacturing thin-film transistor comprises steps of sequentially forming in laminar state a gate film, an insulating film and a conductive film having a transparent electrode film and an amorphous silicon film added with an impurity thereto on the top surface of glass substrate or layer; irradiating ultraviolet ray from the bottom surface side of the substrate to expose negative photoresist film on said conductive film and to etch the same; and forming an amorphous semiconductive film on the structure. In this manner, source and drain electrodes are respectively self-aligned with the gate electrode and contacted therewith through a semiconductive film and a low resistive and semiconductor film.

Abstract: A thin-film transistor circuit used to drive a liquid crystal display device is disclosed, which circuit includes a plurality of circuit components which are arranged in the form of a matrix as to be connected with data lines for supplying an image signal and with address lines for supplying a gate pulse signal, whereby the circuit components control the picture element display in the unit picture element region of the LCD device. Each circuit component has a capacitor connected to the unit picture element region for temporarily storing the image signal, and a TFT transfer gate having a gate electrode connected to one of the address lines, a source electrode connected to one of the data lines, and a drain electrode connected to the capacitor. The transfer gate performs the switching operation in response to the gate pulse signal, thereby transferring the image signal to the capacitor.

Abstract: A magnetic brush development apparatus includes a developer containing magnetic powder therein which is attracted to a non-magnetic support member by a magnet arranged therein. The developer is brought into contact with a latent electrostatic image bearing member which is located in a development section for developing the latent electrostatic image. The magnet has substantially one magnetic pole portion capable of producing a magnetic field having a plurality of peaks in the intensity of the magnetic field located in the development section.

Abstract: To inspect a pneumatic tire for excessively coarse or dense tire cord arrangement in a side wall portion of the tire, a surface irregularity resulting from such improper tire cord arrangement is detected by the use of a capacitance-type distance detector unit positioned in the vicinity of the side wall portion of the tire inflated, wherein one of the tire and the detector units is driven so that the tire and detector unit turn with respect to each other about the center axis of the tire for producing from the detector unit an analog signal which varies with the distance between the outer surface of the detector unit and the tire and wherein the analog signal from the detector unit is processed to detect an improper convexity or concavity in the side wall portion of the tire.

Abstract: A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.