Abstract: There is provided a program to make it possible to check whether operation of the RFID tag is a desired operation assumed by a user. The program causes a computer to function as: a means for acquiring information regarding motion of an RFID tag that performs near-field wireless communication; a means for recognizing preliminary operation of the RFID tag on a basis of the information regarding the motion; and a means for performing processing of displaying the recognized preliminary operation of the RFID tag. This configuration makes it possible to check whether operation of the RFID tag is a desired operation assumed by a user.

Abstract: There is provided a program to make it possible to check whether operation of the RFID tag is a desired operation assumed by a user. The program causes a computer to function as: a means for acquiring information regarding motion of an RFID tag that performs near-field wireless communication; a means for recognizing preliminary operation of the RFID tag on a basis of the information regarding the motion; and a means for performing processing of displaying the recognized preliminary operation of the RFID tag. This configuration makes it possible to check whether operation of the RFID tag is a desired operation assumed by a user.

Abstract: In a secondary battery (1) comprising a battery case (2) for accommodating an electrode plate group (3) and an electrolyte, with one open end of the battery case (2) being sealed with an assembled sealing plate (11) that accommodates a safety mechanism (17) for exhausting pressure in the event of pressure build-up in the battery case (2) exceeding a predetermined level, at least one part (13a) of vent holes (13a, 13b, 13c) in the assembled sealing plate (11) facing the inside of the battery case (2) is constituted of an aperture that results from formation of a turned-out portion (23), the distal end of the turned-out portion (23) being allowed to abut on an insulating plate (4a) that makes contact with one end of the electrode plate group (3) so as to restrict movement of the electrode plate group (3). This can prevent malfunctioning due to displacement of the electrode plate group (3) when an impact or vibration is applied.

Abstract: In a closure assembly for sealed rechargeable batteries, upon a metallic foil is placed a spacer having an aperture that is larger than an upwardly protruding portion of the foil but smaller than the outside diameter of the foil, and upon a metallic safety vent is placed either a spacer and a metallic cap, or a metallic cap only, the spacer and/or metallic cap having an aperture that is larger than a downwardly protruding portion of the safety vent but smaller than the outside diameter of the safety vent, so as to control and suppress deformation of the metallic foil and safety vent in the event of abnormal battery pressure increasing due to overcharging or the like and to ensure that rupture occurs at a predetermined pressure level, whereby a sealed rechargeable battery suitable for high-output applications and having high safety features is provided.

Abstract: An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

Abstract: In a secondary battery (1) comprising a battery case (2) for accommodating an electrode plate group (3) and an electrolyte, with one open end of the battery case (2) being sealed with an assembled sealing plate (11) that accommodates a safety mechanism (17) for exhausting pressure in the event of pressure build-up in the battery case (2) exceeding a predetermined level, at least one part (13a) of vent holes (13a, 13b, 13c) in the assembled sealing plate (11) facing the inside of the battery case (2) is constituted of an aperture that results from formation of a turned-out portion (23), the distal end of the turned-out portion (23) being allowed to abut on an insulating plate (4a) that makes contact with one end of the electrode plate group (3) so as to restrict movement of the electrode plate group (3). This can prevent malfunctioning due to displacement of the electrode plate group (3) when an impact or vibration is applied.

Abstract: An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased by performing gettering. To solve the problem, as a feature of the structure of the invention, in the case of removing a silicon oxide film formed over the semiconductor film, an etchant made of a solution containing fluorine and a substance having surface activity is used.

Abstract: An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

Abstract: An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

Abstract: In a closure assembly for sealed rechargeable batteries, upon a metallic foil is placed a spacer having an aperture that is larger than an upwardly protruding portion of the foil but smaller than the outside diameter of the foil, and upon a metallic safety vent is placed either a spacer and a metallic cap, or a metallic cap only, the spacer and/or metallic cap having an aperture that is larger than a downwardly protruding portion of the safety vent but smaller than the outside diameter of the safety vent, so as to control and suppress deformation of the metallic foil and safety vent in the event of abnormal battery pressure increasing due to overcharging or the like and to ensure that rupture occurs at a predetermined pressure level, whereby a sealed rechargeable battery suitable for high-output applications and having high safety features is provided.

Abstract: An object of the present invention is to provide a method for manufacturing a semiconductor device in which, after crystallizing by using an element that promotes crystallization, holes are prevented from being generated in a crystalline semiconductor film with a concentration of the element in the crystalline semiconductor film decreased by performing gettering. To solve the problem, as a feature of the structure of the invention, in the case of removing a silicon oxide film formed over the semiconductor film, an etchant made of a solution containing fluorine and a substance having surface activity is used.

Abstract: An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.