Abstract: A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

Abstract: A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° C. or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. By this means, a wafer in which unevenly distributed LPDs that are present on the wafer are reduced is obtained.

Abstract: There is provided a sheet-shaped sealing material that has excellent shock absorbency, sealing properties, cold and heat resistance, and light resistance even if the thickness is small. The sheet-shaped sealing material according to the present invention comprises: a silicone resin (A); and a plurality of particles (B) dispersed in the silicone resin and each having a cavity portion therein. The thickness of the sheet-shaped sealing material is, for example, 0.05 to 4 mm. The plurality of particles (B) comprise, for example, foamed particles that is thermally expanded.

Abstract: A silicone resin foamed body according to the present invention comprises: a silicone resin cured product (A); and a plurality of particles (B) dispersed in the silicone resin cured product (A) and each having a cavity portion (b1) therein, wherein the silicone resin foamed body has a cavity portion (C) surrounded with the silicone resin cured product (A) or with the silicone resin cured product (A) and the particles (B) in the silicone resin cured product (A).

Abstract: There is provided a sheet-shaped sealing material that has excellent shock absorbency, sealing properties, cold and heat resistance, and light resistance even if the thickness is small. The sheet-shaped sealing material according to the present invention comprises: a silicone resin (A); and a plurality of particles (B) dispersed in the silicone resin and each having a cavity portion therein. The thickness of the sheet-shaped sealing material is, for example, 0.05 to 4 mm. The plurality of particles (B) comprise, for example, foamed particles that is thermally expanded.

Abstract: Methods of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. The present invention provides a method of manufacturing a sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface, the method comprising: preparing a sapphire seed whose side face forms a crystal face within a {1-100} face±10 °, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to said sapphire seed.

Abstract: Methods of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. The present invention provides a method of manufacturing a sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface, the method comprising: preparing a sapphire seed whose side face forms a crystal face within a {1-100} face±10°, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to said sapphire seed.

Abstract: Provided is a pressure-sensitive adhesive polarizing plate, including: a polarizer (P); a transparent protective film (E) provided on only one side of the polarizer (P) with an adhesive layer (G) interposed therebetween; a pressure-sensitive adhesive layer (B) provided on another side of the polarizer (P) with a protective layer (H) having a tensile modulus of 100 MPa or more interposed therebetween. The pressure-sensitive adhesive polarizing plate satisfies durability even under harsh environments at a low temperature and a high temperature.

Abstract: A communication system, usable as a radio facsimile system, can transmit/receive information using a dedicated protocol independently of the radio wave status, as well as improve the transmission efficiency by restarting the subject communication even when it is interrupted and restarting the communication beginning with the data immediately following the normally transmitted data. A communication controller relays the communications between radio facsimile and general facsimile, and changes protocols appropriate to the subject communication to reduce interruptions. In addition, when the subject communication is interrupted, the communication system can cope with it to continue the communication by re-dialing automatically at fixed intervals, adding the communication discrimination information for each communication, and sending communication discrimination information and position information concerning the data received immediately prior to the interruption.

Abstract: An information transmission/reception apparatus having a reader for reading an image and outputting an image signal of the image, an encoder having a plurality of line memories for storing the image signal for encoding the image signal into a code signal while always confirming that the image signal of at least one line is stored in the line memories, a transceiver for transmitting and receiving the code signal, a decoder having a plurality of line memories for storing the image signal represented by the code signal, the decoder decoding an input code signal from one of a page top position and a page intermediate position, and a recorder for recording the image signal decoded by the decoder, thereby while an image signal is being decoded without using a page memory, a split or overlapping recording of pages can be carried out.

Abstract: An apparatus is provided for expanding, decompressing and editing signals, and particularly a signal processing equipment for printing or displaying images. The apparatus includes compression device for image data, storing device for storing the compression data, decompression device, and editing device for editing, using only signals for editing, wherein the transfer of the data between the device is executed using the compression data.

Abstract: There is disclosed an apparatus for expanding, decompressing and editing signals, and particularly disclosed is a signal processing equipment for printing or displaying images. The apparatus comprises compression means for image data, storing means for storing the compression data, decompression means, and editing means for editing, using only signals for edition, wherein the transfer of the data between the means is executed by the compression data.

Abstract: The cooling speed of the portion near the rear part of a single-crystal body and passing through the defect-forming temperature zone is kept the same as that of the front portion of the single-crystal body. Namely, the heater is kept in operation while pulling the single crystal silicon subsequent to forming the tail of the single crystal silicon and the cooling speed throughout the whole single-crystal body in the defect-forming temperature zone is kept below 15.degree. C./min (levels A and B). Furthermore, the length of the tail is preset in the process of pulling the single crystal silicon so that the single-crystal body cools down slowly while passing through the defect-forming temperature zone (level C).

Abstract: An image restoring apparatus is provided that can restore an image disturbed by transmission error to a natural image in real time even if the transmission error occurs frequently. The image restoring apparatus has refresh control means for updating all the image data of a frame, inframe correcting means for effecting correction processing in the frame, and selecting means for selecting either of the refresh control means or the in-frame correcting means by detecting of number or positions of blocks having an error in the pixel data of the frame.

Abstract: A method for fabricating a single-crystal semiconductor by means of CZ method is disclosed. The method separates the single-crystal semiconductor from the melt by increasing the lift rate when the growth of a crystal body is finished. By controlling the lift rate, the single-crystal semiconductor is then gradually cooled within a range of an arbitrary crystal temperature, thereby forming a concave separated surface. The single-crystal semiconductor is cooled at a rate of lower than 35.degree. C./min when the temperature of the separated surface is within a range between the melting point and 1000.degree. C., or by keeping the temperature of the separated surface within a range between 1250.degree. C. and 1000.degree. C. for more than 30 minutes. Therefore, no dislocation is introduced in the crystal body, and productivity is improved.

Abstract: When the pulling speed is V(mm/min), the temperature gradient along the crystal axis within the temperature range from the melting point of silicon to 1300.degree. C. is G1 (.degree. C./mm), the temperature gradient along the crystal axis within the temperature range from 1150.degree. to 1080.degree. C. is G2 (.degree. C./mm), and the octahedral-shaped void density is d (pieces/cm.sup.3), crystals are grown under a condition satisfying:V/G1>0.581.times.V.times.G2-(d-4.3.times.10.sup.3)/2.65.times.10.sup.6 and V/G1>0.25.In this way, the defect density is reduced to less than 1.times.106 pieces/cm.sup.3 and silicon single crystals having superior gate oxide integrity and semiconductor device yield are obtained.

Abstract: An information transmission/reception apparatus having a reader for reading an image and outputting an image signal of the image, an encoder having a plurality of line memories for storing the image signal for encoding the image signal into a code signal while always confirming that the image signal of at least one line is stored in the line memories, a transceiver for transmitting and receiving the code signal, a decoder having a plurality of line memories for storing the image signal represented by the code signal, the decoder decoding an input code signal from one of a page top position and a page intermediate position, and a recorder for recording the image signal decoded by the decoder, thereby while an image signal is being decoded without using a page memory, a split or overlapping recording of pages can be carried out.

Abstract: A document communication apparatus includes an input unit for giving various indications such as document processing; a communication unit for transmitting and receiving information and rules of document processing in communication with another document communication apparatus, and an information processing unit for processing document information based on the received rules of document process Further, a communication apparatus for transmitting or receiving information among plural communication apparatuses makes it possible to transmit and receive a document with the rules of document processing corresponding to the content of at least a request for document processing.

Abstract: An image information processor for producing a high-quality output image by emphasizing the contour portions of a character, a photograph and others and by preventing the generation of a Moire patterns in a dot region, for preventing an increase in the amount of codes, and for making it unnecessary to set desired binarization processing for each original, is provided. The processor includes a unit for scanning the original to convert each pixel data into an electric signal, a unit for controlling the start of image processing, a filter for carrying out enhancement processing among a plurality of pixels arranged in oblique directions after smoothing processing has been carried out among a plurality of contiguous pixels arranged in scanning and traverse directions, and a unit for carrying out at least one of binarization and binarization capable of realizing pseudo tone expression.