Patents by Inventor Kouzou Tachibana
Kouzou Tachibana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11600500Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.Type: GrantFiled: July 9, 2021Date of Patent: March 7, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kouzou Tachibana, Katsuhiro Morikawa, Kouichi Mizunaga
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Publication number: 20230023792Abstract: A substrate processing method includes: a first etching step of performing a first etching by supplying an etching liquid on a front surface of a substrate while rotating the substrate, wherein the first etching is performed under a condition in which a second etching amount of an etching target film in a second region on a peripheral edge of the front surface, is greater than a first etching amount of the etching target film in a first region on a center side of the front surface; and a second etching step of performing a second etching by supplying the etching liquid to the front surface of the substrate while rotating the substrate, wherein the second etching is performed under a condition in which the second etching amount of the etching target film in the second region of the front surface of the substrate is smaller than the first etching amount of the etching target film in the first region.Type: ApplicationFiled: December 3, 2020Publication date: January 26, 2023Inventor: Kouzou TACHIBANA
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Publication number: 20220130691Abstract: A substrate processing method of performing liquid processing on a substrate in a substrate processing apparatus, which includes a substrate table configured to suction the substrate, a heater configured to heat the substrate table, and a processing liquid nozzle configured to supply a processing liquid to the substrate suctioned to the substrate table, includes: a suctioning process of suctioning the substrate by the substrate table when there is no temperature difference between the substrate and the substrate table or when a temperature difference between the substrate and the substrate is within a predetermined range; and after the suctioning process, a processing liquid supply process of supplying the processing liquid from the processing liquid nozzle to the substrate suctioned to the substrate table heated by the heater.Type: ApplicationFiled: October 25, 2021Publication date: April 28, 2022Inventors: Kouzou TACHIBANA, Katsuhiro MORIKAWA, Kouichi MIZUNAGA, Masami AKIMOTO, Kousuke NEGISHI
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Publication number: 20220059357Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.Type: ApplicationFiled: November 5, 2021Publication date: February 24, 2022Inventors: Hitoshi KOSUGI, Shota UMEZAKI, Kouzou TACHIBANA, Ryo YAMAMOTO
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Publication number: 20220020611Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.Type: ApplicationFiled: July 9, 2021Publication date: January 20, 2022Inventors: Kouzou Tachibana, Katsuhiro Morikawa, Kouichi Mizunaga
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Patent number: 11217451Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.Type: GrantFiled: January 8, 2020Date of Patent: January 4, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Hitoshi Kosugi, Shota Umezaki, Kouzou Tachibana, Ryo Yamamoto
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Patent number: 10867814Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.Type: GrantFiled: February 14, 2017Date of Patent: December 15, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yosuke Kawabuchi, Kouzou Tachibana, Mitsunori Nakamori, Kotaro Ooishi, Keisuke Egashira, Koji Tanaka, Hiroaki Inadomi, Masami Yamashita, Yoshiteru Fukuda, Koji Yamashita, Yu Tsurifune, Takuro Masuzumi
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Patent number: 10770284Abstract: A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. The temperature-difference forming process makes, in parallel with the etching process, a temperature in a lower portion of the pattern lower than a temperature in an upper portion of the pattern. The rinsing process supplies rinse liquid onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.Type: GrantFiled: December 26, 2017Date of Patent: September 8, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Yonekawa, Shuhei Takahashi, Kouzou Tachibana, Hideki Nishimura
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Patent number: 10734255Abstract: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.Type: GrantFiled: May 18, 2017Date of Patent: August 4, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Kenji Sekiguchi, Itaru Kanno, Meitoku Aibara, Kouzou Tachibana
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Publication number: 20200234998Abstract: A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.Type: ApplicationFiled: January 8, 2020Publication date: July 23, 2020Inventors: Hitoshi KOSUGI, Shota UMEZAKI, Kouzou TACHIBANA, Ryo YAMAMOTO
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Publication number: 20180182616Abstract: A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. The temperature-difference forming process makes, in parallel with the etching process, a temperature in a lower portion of the pattern lower than a temperature in an upper portion of the pattern. The rinsing process supplies rinse liquid onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.Type: ApplicationFiled: December 26, 2017Publication date: June 28, 2018Inventors: Hiroki Yonekawa, Shuhei Takahashi, Kouzou Tachibana, Hideki Nishimura
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Patent number: 9865452Abstract: Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent agent which is heated to a first predetermined temperature and then reaches a second predetermined temperature lower than the first predetermined temperature, is supplied to a substrate. In the rinse step, a rinse liquid is supplied to the substrate after the water-repellency step. In the dry step, the rinse liquid on the substrate after the rinse step is removed.Type: GrantFiled: March 30, 2016Date of Patent: January 9, 2018Assignee: Tokyo Electron LimitedInventors: Kotaro Oishi, Keisuke Egashira, Kouzou Tachibana, Hideaki Udou
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Publication number: 20170345685Abstract: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.Type: ApplicationFiled: May 18, 2017Publication date: November 30, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Kenji SEKIGUCHI, Itaru KANNO, Meitoku AIBARA, Kouzou TACHIBANA
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Publication number: 20170236729Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.Type: ApplicationFiled: February 14, 2017Publication date: August 17, 2017Inventors: Yosuke Kawabuchi, Kouzou Tachibana, Mitsunori Nakamori, Kotaro Ooishi, Keisuke Egashira, Koji Tanaka, Hiroaki Inadomi, Masami Yamashita, Yoshiteru Fukuda, Koji Yamashita, Yu Tsurifune, Takuro Masuzumi
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Patent number: 9687873Abstract: A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.Type: GrantFiled: May 27, 2015Date of Patent: June 27, 2017Assignee: TOKYO ELECTRON LIMITEDInventor: Kouzou Tachibana
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Publication number: 20160300710Abstract: Disclosed is a substrate processing method that includes a water-repellency step, a rinse step, and a dry step. In the water-repellency step, a water-repellent agent which is heated to a first predetermined temperature and then reaches a second predetermined temperature lower than the first predetermined temperature, is supplied to a substrate. In the rinse step, a rinse liquid is supplied to the substrate after the water-repellency step. In the dry step, the rinse liquid on the substrate after the rinse step is removed.Type: ApplicationFiled: March 30, 2016Publication date: October 13, 2016Inventors: Kotaro Oishi, Keisuke Egashira, Kouzou Tachibana, Hideaki Udou
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Patent number: 9217922Abstract: A liquid processing apparatus includes a substrate holding unit arranged within a processing cup and configured to horizontally hold a substrate, a rotating mechanism configured to rotate the substrate holding unit about a vertical axis, a processing liquid supply unit configured to supply a processing liquid onto a surface of the substrate, and an exhaust mechanism configured to discharge an atmospheric gas around the substrate. The exhaust mechanism includes an exhaust flow path connected to an exhaust port formed at the processing cup, a circulation flow path branched from the exhaust flow path and configured to communicate with the processing cup, a gas liquid separator, a first regulator valve installed at one end of the exhaust flow path, and a second regulator valve installed at the other end of the exhaust flow path.Type: GrantFiled: July 24, 2013Date of Patent: December 22, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Minoru Kubota, Kousuke Yoshihara, Kouzou Tachibana
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Publication number: 20150251211Abstract: A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.Type: ApplicationFiled: May 27, 2015Publication date: September 10, 2015Inventor: Kouzou TACHIBANA
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Patent number: 9070731Abstract: A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.Type: GrantFiled: November 25, 2014Date of Patent: June 30, 2015Assignee: TOKYO ELECTRON LIMITEDInventor: Kouzou Tachibana
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Publication number: 20150155197Abstract: A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.Type: ApplicationFiled: November 25, 2014Publication date: June 4, 2015Inventor: Kouzou TACHIBANA