Abstract: A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method.

Abstract: A surface treating method of the invention comprises the steps of generating mixed chemical species containing an intended chemical species of ions necessary for surface treatment by ionization of a gas, selectively trapping the intended chemical species from the mixed chemical species, exciting the intended chemical species to predetermined vibrational and electronic states, extracting the excited chemical species from a position where trapped, and subjecting the extracted chemical species to surface treatment on a surface of an article to be treated. In this method, the intended chemical species of ions which are under vibrational and electronic conditions effective for the surface treatment and have a certain mass number have been once trapped at a given position. The trapped ions are uniformly arranged with respect to their translational velocity and applied to a sample surface. Thus, dry etching with high anisotropy and high selectivity to material and deposition with good uniformity can be realized.

Abstract: An optical element which allows replication of a refined pattern and a projection exposure apparatus employing the optical element are disposed so that side face portions of predetermined patterns which create shadows from oblique incident exposure radiation may be minimized at a predetermined incidence angle of vacuum ultrasonic radiation or X-radiation, or the patterns of the optical element are formed such that the direction in which incident radiation is reflected regularly and the direction of side faces of the patterns may extend in parallel to each other. When the optical element is irradiated to replicate or image the patterns of the optical element, refined patterns can be replicated or imaged.

Abstract: In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.

Abstract: Reduction projection type X-ray lithography with an exposing beam wavelength of 40-150A, longer than in conventional 1:1 proximity exposure, has a high-vacuum space. This would reduce wafer replacement work efficiency and contaminate optical mirrors with substances released by a resist decomposed during exposure except for separating an optical system chamber and a wafer exposing chamber by a differential pumping section and a thin-film window. Wafer exposure is under atmospheric pressure, improving productivity, accuracy of exposure and longevity of the optical devices.

Abstract: An X-ray mask comprises an absorber pattern composed of a material capable of absorbing X-ray, a mask substrate for supporting the absorber pattern, composed of a material capable of transmitting X-ray, and a support frame for supporting the mask substrate, wherein the mask substrate is composed of a mask substrate material whose impurity content is suppressed to reduce positional distortions generated by X-ray radiation. Generation of positional distortions by X-ray exposure is inhibited and an arrangement of mask pattern can be ensured with a high precision.

Abstract: The method for production of a graft copolymer according to the present invention includes the step of adding to a base polymer capable of forming first radicals when irradiated with radiation an additive capable of combining with said first radicals to form second radicals stable against oxygen, the step of irradiating said base polymer containing the additive with radiation, and the step of introducing a monomer under an atmosphere free from oxygen, thereby to graft copolymerize said irradiated base polymer and said monomer.

Abstract: When a pattern is to be fabricated by a lithography using radiation on a heavy metal layer formed on a substrate, secondary electrons are generated in a diverging form from the heavy metal layer by irradiation with a radioactive ray to expose the resist. As a result, the accuracy of the pattern to be formed on the resist is reduced. In order to prevent this, a layer to be transferred, a substrate to be worked, a mask and so on are formed with a film capable of absorbing the secondary electrons so that secondary electrons generated from the heavy metal layer may not reach the resist film. Although a pattern having a thickness of 2 microns or less could not be fabricated according to the prior art, a pattern as thin as 1.5 microns can be fabricated by the method of the present invention.

Abstract: The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

Abstract: The present invention provides a method of pattern fabrication by radiation-induced graft copolymerization which enables not only the fabrication of a very fine resist pattern in a very small exposure dosage but also excellent etching fabrication by utilizing the current dry etching process through the pattern fabrication by making use of a resist capable of causing radiation-induced graft copolymerization and having excellent dry etching resistance, i.e., a poly(methacrylate) having a phenyl group, polystyrene, or its derivative.

Abstract: An X-ray exposure system including a plurality of X-ray exposure apparatuses each for duplicating a mask pattern on a semiconductor wafer by irradiating an X-ray mask and the semiconductor wafer with synchrotron radiation is disclosed in which a synchrotron radiation path branching device including a reflecting mirror is disposed between a synchrotron ring and the X-ray exposure apparatuses, and the propagation direction of the synchrotron radiation emitted from the synchrotron ring is changed by the reflecting mirror so that the synchrotron radiation from the ring can be introduced into each of the X-ray exposure apparatuses.

Abstract: There is disclosed a mask for X-ray lithography wherein a peroxopolytungsten compound is used as an absorber, and a process for producing the same. Since this compound has a sensitivity for electron beams and light and serves as an absorber for X-rays, a mask for X-ray lithorgraphy is made only by applying this compound to a substrate, exposing the same to light to form a transferred pattern, and effecting development. Thus, the step of etching the absorber which is essential in the conventional process, is not needed. Therefore, masks having a highly accurate pattern and few defects can be produced with a high production yield.

Abstract: A process of X-Y lithography including providing a linearly polarized X-ray, and irradiating a resist on a substrate through a mask with the linearly polarized X-ray to form a pattern shape which is utilized for production of, for example, a semiconductor device or magnetic bubble memory device.

Abstract: A method of measuring a resist pattern in which size and/or position of a latent image formed in the resist film by irradiation, is measured by Auger electron spectroscopy or a like method. With this method, since there is no need to develop when the resist pattern is not acceptable, manufacturing costs are decreased. By adjusting developing time by replying upon the data from the latent image, furthermore, high yield processing can be effected more precisely.

Abstract: An X-ray mask having a mask pattern formed from nickel or a material having nickel as a principal component supported on a thin membrane. The X-ray mask has characteristics substantially equal to those of the conventional X-ray mask employing Au as a mask pattern and is much lower in price than the Au-containing mask pattern. In addition, since the X-ray mask can easily be formed by electroless plating, it is possible to form a mask pattern with a higher accuracy than that in case of employing Au alone.

Abstract: While a convex mirror is being rotated or rotatingly vibrated about a rotational axis which is parallel to the center axis of the convex mirror and which is eccentric to the convex mirror, a synchrotron radiation flux is caused to be incident on the convex mirror, and a radiation sensitive resist film is irradiated with the reflected radiation flux through a mask.Thus, an area of uniform irradiation can be increased remarkably as compared with that in a prior art, and the invention is well suited to the irradiation of a semiconductor wafer having a large area.

Abstract: Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.

Abstract: That region of a resist film in which a contact is to be formed and that region thereof in which an interconnection is to be formed are respectively irradiated with an electron beam in a dose substantially equal to an optimum dose of the resist film and in a dose less than the optimum dose. Thereafter, the resist film is developed.By performing dry etching, an opening extending to a substrate is provided in the region in which the contact is to be formed, and the surface of an insulating film overlying the substrate is exposed in the region in which the interconnection is to be formed.After depositing a conductive metal film on the whole surface the remaining resist film is removed together with the metal film deposited thereon, whereby the contact and the interconnection are formed.

Abstract: A method of forming a pattern comprising heat-treating a resist film subjected to irradiation with light and thereafter removing an unhardened area of the resist film.Since the heat treatment reduces the film thickness of the unhardened area and hardens a hardened area still more, a pattern on the order of submicrons can be readily formed.