Abstract: A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

Abstract: A power module includes a plurality of power semiconductor devices. The plurality of power semiconductor devices includes an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) coupled in parallel between a first power switching terminal and a second power switching terminal. The IGBT and the MOSFET are silicon carbide devices. By providing the IGBT and the MOSFET together, a tradeoff between forward conduction current and reverse conduction current of the power module, the efficiency, and the specific current rating of the power module may be improved. Further, providing the IGBT and the MOSFET as silicon carbide devices may significantly improve the performance of the power module.

Abstract: The design and fabrication of a highly integrated, intelligent integral horsepower, three-phase induction motor drive is based on multichip module (MCM) technology. A conventional three-phase induction motor is transformed into a stand-alone variable-speed drive by way of MCM technology. This solid-state controller-known as a multichip power module (MCPM)-uses known good die (KGD) to obtain minimal footprint, volume, and mass, while maximizing efficiency, reliability, and manufacturability. This is done by integrating the low-power control and high-power sections onto a single substrate. In accordance with one embodiment of the present invention, an integrated circuit assembly formed on a single substrate is capable of transforming and controlling AC power input to DC power output responsive to input signals.