Patents by Inventor Kris Kong

Kris Kong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11495515
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 8, 2022
    Assignee: AKASH SYSTEMS, INC.
    Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
  • Patent number: 10985082
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·1 having a full width half maximum of no more than 5.0 cm·1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: April 20, 2021
    Assignee: Akash Systems, Inc.
    Inventors: Tyrone D. Mitchell, Jr., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong
  • Publication number: 20200402973
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig
  • Publication number: 20200402974
    Abstract: Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm?1 having a full width half maximum of no more than 5.0 cm?1 as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Tyrone D. Mitchell, JR., Felix Ejeckam, Daniel Francis, Paul Saunier, Kris Kong, Ralph Ewig