Patents by Inventor Kristijonas Vizbaras
Kristijonas Vizbaras has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11896373Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: GrantFiled: May 21, 2018Date of Patent: February 13, 2024Assignee: Brolis Sensor Technology, UABInventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Patent number: 11696707Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: GrantFiled: August 15, 2022Date of Patent: July 11, 2023Assignee: Brolis Sensor Technology, UAB et al.Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Publication number: 20230170672Abstract: Solid-state optical devices (10) enable tuning of an electrically tunable depletion region (200) to reduce and block lateral (in-junction) carrier spreading. This capability reduces the negative effects of gain-guiding in the junction plane and reduces an astigmatism of an emitted light beam. The tunable depletion region is created by forming a highly resistive Schottky contact (105, 110) or metal-insulator-semiconductor (MIS) structure (205, 210) next to a waveguide (optical mode propagation) and current injection region (215), where lateral spread due to diffusion is expected. The depletion region area is tuned by applying a bias to the highly resistive Schottky contact or the MIS contact structure. Such contacts or similar lossy structures reduce in-junction plane gain-guiding also when unbiased by creating additional optical loss for the mode, thus reducing the effective carrier density participating in light generation, thereby reducing astigmatism.Type: ApplicationFiled: May 25, 2021Publication date: June 1, 2023Inventor: Kristijonas Vizbaras
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Publication number: 20230047997Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGalnAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: August 15, 2022Publication date: February 16, 2023Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Publication number: 20230036048Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: August 15, 2022Publication date: February 2, 2023Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Publication number: 20230006088Abstract: A solid-state device, and use and formation thereof. The device includes a light emitter (102) that emits light with abeam propagation direction and includes an emitter epitaxial layer stack (940); a light routing medium (103) in optical communication with the light emitter; and a light detector (104) in optical communication with the light routing medium, which detects light emitted by the light emitter and includes a detector epitaxial stack (945). The light emitter and detector are monolithically formed on a semiconductor substrate. The emitter and detector epitaxial layer stacks include different pluralities of layers of a single epitaxial layer stack. The beam propagation direction is either in-plane with the single epitaxial layer stack and the light detector detects light out of plane with the single epitaxial layer stack, or out of plane with the single epitaxial layer stack and the light detector detects light in plane with the single epitaxial layer stack.Type: ApplicationFiled: December 10, 2020Publication date: January 5, 2023Applicant: Brolis Sensor Technology, UABInventors: Kristijonas Vizbaras, Augustinas Vizbaras
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Patent number: 11298057Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: GrantFiled: July 7, 2021Date of Patent: April 12, 2022Assignees: Brolis Sensor Technology, UAB, Universiteit Gent, IMEC VZWInventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva {hacek over (S)}imonytė, Günther Roelkens
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Patent number: 11201453Abstract: Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep.Type: GrantFiled: July 8, 2021Date of Patent: December 14, 2021Assignee: BROLIS SENSOR TECHNOLOGY, UABInventors: Augustinas Vizbaras, Ieva Simonyte, Andreas De Groote, Kristijonas Vizbaras
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Publication number: 20210353183Abstract: A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGaInAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: July 7, 2021Publication date: November 18, 2021Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, Ieva Simonyte, Günther Roelkens
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Patent number: 11177630Abstract: Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep.Type: GrantFiled: January 31, 2019Date of Patent: November 16, 2021Assignee: Brolis Sensor Technology, UABInventors: Augustinas Vizbaras, Ieva Simonyte, Andreas De Groote, Kristijonas Vizbaras
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Publication number: 20210351567Abstract: Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep.Type: ApplicationFiled: July 8, 2021Publication date: November 11, 2021Inventors: Augustinas Vizbaras, Ieva Simonyte, Andreas De Groote, Kristijonas Vizbaras
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Publication number: 20210021099Abstract: Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep.Type: ApplicationFiled: January 31, 2019Publication date: January 21, 2021Inventors: Augustinas Vizbaras, Ieva Simonyte, Andreas De Groote, Kristijonas Vizbaras
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Publication number: 20200403382Abstract: A method and apparatus for beam combining for multiple multimode semiconductor laser diodes includes achieving beam combining in radiant space to provide a directional laser beam with a uniform high radiant intensity level distribution over a large area at a long distance from the source. The method uses more than one broad area high-power multimode semiconductor laser diode and individual optics for collimation, and includes combining the beams of these emitters to provide a relatively homogeneous radiant intensity beam at a long distance for applications such as directed energy delivery, free-space laser communication, and directional infrared countermeasures.Type: ApplicationFiled: November 15, 2018Publication date: December 24, 2020Inventors: Edgaras Dvinelis, Augustinas Vizbaras, Kristijonas Vizbaras
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Publication number: 20200069225Abstract: A spectroscopic laser sensor based on hybrid lll-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a lll-V gain-chip, e.g., an AIGalnAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AIGal-nAsSb/GaSb based photodetectors and embedded electronics for signal processing.Type: ApplicationFiled: May 21, 2018Publication date: March 5, 2020Inventors: Augustinas Vizbaras, Kristijonas Vizbaras, leva Simonyte, Günther Roelkens
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Patent number: 9640389Abstract: A layer structure and method of fabrication of a semiconductor heterostructure containing a two-dimensional electron gas (2DEG), two-dimensional hole gas (2DHG), or a two-dimensional electron/hole gas (2DEHG). The heterostructure contains a quantum well layer with 2DEG, 2DHG, or 2DEHG embedded between two doped charge reservoir layers and at least two remote charge reservoir layers. Such scheme allows reducing the number of scattering ions in the proximity of the quantum well as well a possibility for a symmetric potential for the electron or hole wavefunction in the quantum well, leading to significant improvement in carrier mobility in a broad range of 2DEG or 2DHG concentration in the quantum well. Embodiments of the invention may be applied to the fabrication of galvano-magnetic sensors, HEMT, pHEMT, and MESFET devices.Type: GrantFiled: June 17, 2015Date of Patent: May 2, 2017Assignee: BROLIS SEMICONDUCTORS LTD.Inventors: Augustinas Vizbaras, Kristijonas Vizbaras
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Patent number: 9472627Abstract: A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III) (V), wherein (III) represents one or more group-III elements and (V) represents one or more group-V elements, an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a compound semiconductor layer with (III)x>1(V)2-x, and wherein the intermediate layer has a thickness of 10 monolayers or below, and a second semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III)1(V)1.Type: GrantFiled: October 17, 2013Date of Patent: October 18, 2016Assignee: Brolis Semiconductors Ltd.Inventors: Kristijonas Vizbaras, Augustinas Vizbaras
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Publication number: 20150364547Abstract: A layer structure and method of fabrication of a semiconductor heterostructure containing a two-dimensional electron gas (2DEG), two-dimensional hole gas (2DHG), or a two-dimensional electron/hole gas (2DEHG). The heterostructure contains a quantum well layer with 2DEG, 2DHG, or 2DEHG embedded between two doped charge reservoir layers and at least two remote charge reservoir layers. Such scheme allows reducing the number of scattering ions in the proximity of the quantum well as well a possibility for a symmetric potential for the electron or hole wavefunction in the quantum well, leading to significant improvement in carrier mobility in a broad range of 2DEG or 2DHG concentration in the quantum well. Embodiments of the invention may be applied to the fabrication of galvano-magnetic sensors, HEMT, pHEMT, and MESFET devices.Type: ApplicationFiled: June 17, 2015Publication date: December 17, 2015Inventors: Augustinas Vizbaras, Kristijonas Vizbaras
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Publication number: 20150249135Abstract: A III-V compound semiconductor heterostructure grown on a substrate is described.Type: ApplicationFiled: October 17, 2013Publication date: September 3, 2015Inventors: Kristijonas Vizbaras, Augustinas Vizbaras