Abstract: The disclosed technology generally relates to semiconductor characterization, and more particularly to detecting manufacturing defects in semiconductor regions. In one aspect, a non-destructive method of detecting a manufacturing defect in a semiconductor device includes providing a semiconductor device comprising an electrically isolated conductive via formed in a semiconductor region. The method additionally includes locally heating to cause a temperature change in a volume of the semiconductor region from a first temperature to a second temperature. The method additionally includes applying an electrical bias between the conductive via and the semiconductor region to form a temperature-dependent depletion region in the semiconductor region.

Abstract: The disclosed technology generally relates to semiconductor characterization, and more particularly to detecting manufacturing defects in semiconductor regions. In one aspect, a non-destructive method of detecting a manufacturing defect in a semiconductor device includes providing a semiconductor device comprising an electrically isolated conductive via formed in a semiconductor region. The method additionally includes locally heating to cause a temperature change in a volume of the semiconductor region from a first temperature to a second temperature. The method additionally includes applying an electrical bias between the conductive via and the semiconductor region to form a temperature-dependent depletion region in the semiconductor region.