Abstract: Example embodiments relate to methods and apparatuses for aligning a probe for scanning probe microscopy (SPM) to the tip of a pointed sample. One embodiments includes a method for aligning an SPM probe to an apex area of a free-standing tip of a pointed sample. The method includes providing an SPM apparatus that includes the SPM probe; a sample holder; a drive mechanism; and detection, control, and representation tools for acquiring and representing an image of a surface scanned by the SPM probe. The method also includes mounting the sample on the sample holder. Further, the method includes positioning the probe tip of the SPM, determining a 2-dimensional area that includes the pointed sample, performing an SPM acquisition scan, evaluating and acquired image, and placing the SPM probe in a position where it is aligned with an apex area of the free-standing tip of the pointed sample.

Abstract: Example embodiments relate to methods and apparatuses for aligning a probe for scanning probe microscopy (SPM) to the tip of a pointed sample. One embodiments includes a method for aligning an SPM probe to an apex area of a free-standing tip of a pointed sample. The method includes providing an SPM apparatus that includes the SPM probe; a sample holder; a drive mechanism; and detection, control, and representation tools for acquiring and representing an image of a surface scanned by the SPM probe. The method also includes mounting the sample on the sample holder. Further, the method includes positioning the probe tip of the SPM, determining a 2-dimensional area that includes the pointed sample, performing an SPM acquisition scan, evaluating and acquired image, and placing the SPM probe in a position where it is aligned with an apex area of the free-standing tip of the pointed sample.

Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.

Abstract: The disclosure is related to a method for performing SPM measurements, wherein a sample is attached to a cantilever and scanned across a tip. The tip is one of several tips present on a substrate comprising at least two different types of tips on its surface, thereby enabling performance of multiple SPM measurements requiring a different type of tip, without replacing the cantilever. The at least two different types of tips are different in terms of their material, in terms of their shape or size, and/or in terms of the presence or the type of active or passive components mounted on or incorporated in the substrate, and associated to tips of one or more of the different types. The disclosure is equally related to a substrate comprising a plurality of tips suitable for use in the method of the disclosure.

Abstract: The disclosure is related to a method for performing SPM measurements, wherein a sample is attached to a cantilever and scanned across a tip. The tip is one of several tips present on a substrate comprising at least two different types of tips on its surface, thereby enabling performance of multiple SPM measurements requiring a different type of tip, without replacing the cantilever. The at least two different types of tips are different in terms of their material, in terms of their shape or size, and/or in terms of the presence or the type of active or passive components mounted on or incorporated in the substrate, and associated to tips of one or more of the different types. The disclosure is equally related to a substrate comprising a plurality of tips suitable for use in the method of the disclosure.

Abstract: The disclosed technology relates to a method and apparatus for correctly positioning a probe suitable for scanning probe microscopy (SPM). The probe is positioned relative to the apex region of a needle-shaped sample, such as a sample for atom probe tomography, in order to perform a SPM acquisition of the apex region to obtain an image of the region. In one aspect, the positioning takes place by an iterative process, starting from a position wherein one side plane of the pyramid-shaped SPM probe interacts with the sample tip. By controlled consecutive scans in two orthogonal directions, the SPM probe tip approaches and finally reaches a position wherein a tip area of the probe interacts with the sample tip's apex region.

Abstract: A device is provided for electrically measuring surface characteristics of a sample. The device comprises at least one group of three electrodes: a first and second electrode spaced apart from each other and configured to be placed onto the surface of the sample, and a third electrode between the first two but isolated from these two electrodes by a one or more first insulators, wherein a second insulator further isolates the central electrode from the sample when the device is placed thereon. The three electrodes and the insulators are attached to a single or to multiple holders with conductors incorporated therein for allowing the coupling of the electrodes to power sources or measurement tools. The placement of the device onto a semiconductor sample creates a transistor with the sample surface acting as the channel. The device thereby allows the determination of the transistor characteristics of the sample in a straightforward way.

Abstract: The disclosure is related to a method and apparatus for transmission electron microscopy wherein a TEM specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an SPM probe, and wherein the thinned area is subjected to an SPM acquisition step, using the same SPM probe or another probe.

Abstract: A method of measuring an electrical characteristic of a current path is disclosed. In one aspect, the method includes a probe for scanning spreading resistance microscopy (SSRM), a test sample contacted by the probe, a back contact on the test sample, a bias voltage source and a logarithmic SSRM amplifier, when a modulation at a predefined frequency is applied to either the contact force of the probe or to the bias voltage, the device comprising electronic circuitry for producing in real time a signal representative of the electrical characteristic, according to the formula lognA=±VSSRM±logn(dV)+Vmultiplier.

Abstract: The disclosed technology relates to a method and apparatus for correctly positioning a probe suitable for scanning probe microscopy (SPM). The probe is positioned relative to the apex region of a needle-shaped sample, such as a sample for atom probe tomography, in order to perform a SPM acquisition of the apex region to obtain an image of the region. In one aspect, the positioning takes place by an iterative process, starting from a position wherein one side plane of the pyramid-shaped SPM probe interacts with the sample tip. By controlled consecutive scans in two orthogonal directions, the SPM probe tip approaches and finally reaches a position wherein a tip area of the probe interacts with the sample tip's apex region.

Abstract: A method of measuring an electrical characteristic of a current path is disclosed. In one aspect, the method includes a probe for scanning spreading resistance microscopy (SSRM), a test sample contacted by the probe, a back contact on the test sample, a bias voltage source and a logarithmic SSRM amplifier, when a modulation at a predefined frequency is applied to either the contact force of the probe or to the bias voltage, the device comprising electronic circuitry for producing in real time a signal representative of the electrical characteristic, according to the formula lognA=±VSSRM±logn(dV)+Vmultiplier.

Abstract: The disclosure is related to a method and apparatus for transmission electron microscopy wherein a TEM specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an SPM probe, and wherein the thinned area is subjected to an SPM acquisition step, using the same SPM probe or another probe.

Abstract: An apparatus (100) for performing atomic force microscopy is disclosed. The apparatus comprises an AFM measurement unit (102) configured to operate in a first controlled atmosphere (300) and a pretreatment unit (101) configured to operate in a second controlled atmosphere (400), the second controlled atmosphere being different from the first controlled atmosphere. The pretreatment unit is connected to the AFM measurement unit. In one embodiment, the second controlled atmosphere is a vacuum atmosphere, whereas the first controlled atmosphere includes at least an inert gas.