Patents by Inventor Kristofer L. Gleason

Kristofer L. Gleason has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid-state shear stress sensors with high selectivity
    Patent number: 11073433
    Abstract: Solid-state stress sensors are presented herein. A sensor system may include a substrate, a first layer of sensing material disposed on a first surface of the substrate and at least two electrodes forming an electrode pair. The at least two electrodes may include a first electrode and a second electrode. The first and second electrodes may be offset from each other in a direction substantially parallel to the first surface. The sensing material may be a piezoelectric material and the sensor system may be configured to generate an output signal in response to shear stress experienced by the sensing material.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: July 27, 2021
    Assignees: Silicon Audio, Inc., BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Neal A. Hall, Donghwan Kim, Randall P. Williams, David P. Gawalt, Bradley D. Avenson, Caesar T. Garcia, Kristofer L. Gleason
  • Solid-State Shear Stress Sensors with High Selectivity
    Publication number: 20190257702
    Abstract: Solid-state stress sensors are presented herein. A sensor system may include a substrate, a first layer of sensing material disposed on a first surface of the substrate and at least two electrodes forming an electrode pair. The at least two electrodes may include a first electrode and a second electrode. The first and second electrodes may be offset from each other in a direction substantially parallel to the first surface. The sensing material may be a piezoelectric material and the sensor system may be configured to generate an output signal in response to shear stress experienced by the sensing material.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 22, 2019
    Inventors: Neal A. Hall, Donghwan Kim, Randall P. Williams, David P. Gawalt, Bradley D. Avenson, Caesar T. Garcia, Kristofer L. Gleason
  • Solid-state shear stress sensors with high selectivity
    Patent number: 10309845
    Abstract: Embodiments of solid-state stress sensors are presented herein. A sensor system may include a substrate, a first layer of sensing material disposed on a first surface of the substrate, and at least three electrodes forming a first and second electrode pair. The at least three electrodes may include a first electrode, a second electrode, and a third electrode. The first electrode may be disposed in a first plane and the second electrode and the third electrode may be disposed in a second plane, the first and second planes associated with a first direction parallel to the first surface. The first and second electrodes may be at least partially offset in the first direction. The first and third electrodes may be at least partially offset in the first direction. The sensor system may be configured to generate an output signal in response to a shear stress within the sensing material.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: June 4, 2019
    Assignees: Silicon Audio, Inc., Board of Regents of the University of Texas System
    Inventors: Neal A. Hall, Donghwan Kim, Randall P. Williams, David P. Gawalt, Bradley D. Avenson, Caesar T. Garcia, Kristofer L. Gleason
  • Solid-State Shear Stress Sensors with High Selectivity
    Publication number: 20170016783
    Abstract: Embodiments of solid-state stress sensors are presented herein. A sensor system may include a substrate, a first layer of sensing material disposed on a first surface of the substrate, and at least three electrodes forming a first and second electrode pair. The at least three electrodes may include a first electrode, a second electrode, and a third electrode. The first electrode may be disposed in a first plane and the second electrode and the third electrode may be disposed in a second plane, the first and second planes associated with a first direction parallel to the first surface. The first and second electrodes may be at least partially offset in the first direction. The first and third electrodes may be at least partially offset in the first direction. The sensor system may be configured to generate an output signal in response to a shear stress within the sensing material.
    Type: Application
    Filed: July 15, 2016
    Publication date: January 19, 2017
    Inventors: Neal A. Hall, Donghwan Kim, Randall P. Williams, David P. Gawalt, Bradley D. Avenson, Caesar T. Garcia, Kristofer L. Gleason