Abstract: The subject application relates to a server, terminal and non-transitory computer-readable medium. The server for handling streaming data for a live streaming, comprising one or a plurality of processors, wherein the one or plurality of processors execute a machine-readable instruction to perform: recording the streaming data for the live streaming; storing the streaming data as archive contents with first identifier; receiving interaction information during the live streaming; storing the interaction information as contexts with second identifier, transmitting the archive contents with first identifier to a first user terminal; and transmitting the contexts to the first user terminal according to the first identifier and the second identifier. According to the subject application, the archive contents may be more immersive and the user experience may be enhanced.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.

Abstract: A method for detecting an analyte comprises the following steps: providing a SERS-active substrate and a Raman spectra database; applying a sample onto the SERS-active substrate; applying an incident light by a Raman spectrometer onto the SERS-active substrate to generate a Raman spectrum of the sample; and comparing the Raman spectrum of the sample with a Raman spectra database to identify an analyte in the sample. The SERS-active substrate comprises: a support; a first dielectric layer disposed on the support, wherein the first dielectric layer is formed by a plurality of first nanofibers; and a plurality of noble metal particles formed on the plurality of first nanofibers.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

Abstract: A beta2-microglobulin concentration analyzing method includes: inputting samples that are prepared from spent dialysate and corresponding to sampling time points into a differential mobility analyzing device for analysis to obtain beta2-microglobulin concentrations, multiplying the sampling time points with a dialysate flowrate respectively to obtain spent dialysate volumes, performing fitting on the beta2-microglobulin concentrations to obtain a concentration-spent dialysate volume fitting curve, and performing integration on the concentration-spent dialysate volume fitting curve to generate a total dialyzed weight.

Abstract: A beta2-microglobulin concentration analyzing method includes: preparing a sample with dialysate, and putting the sample into a differential mobility analyzing device for analysis to obtain a beta2-microglobulin concentration. The present invention further provides a beta2-microglobulin concentration analyzing system, which includes: a preparation device and a differential mobility analyzing device, wherein the preparation device is configured to prepare a sample with dialysate, and the differential mobility analyzing device is configured to analyze the sample to obtain a beta2-microglobulin concentration.

Abstract: A calibration method for emulating a Group III-V semiconductor device, a method for determining trap location within a Group III-V semiconductor device and method for manufacturing a Group III-V semiconductor device are provided. Actual tape-out is performed according to an actual process flow of the Group III-V semiconductor device for manufacturing the Group III-V semiconductor devices and PCM Group III-V semiconductor device. Actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are obtained and the actual electrical performances of the Group III-V semiconductor devices and the PCM Group III-V semiconductor device are compared to determine locations where one or more traps appear.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer, a carrier transit layer, a carrier supply layer, a gate, a source electrode and a drain electrode. The buffer layer is on a substrate. The carrier transit layer is on the buffer layer. The carrier supply layer is on the carrier transit layer. The gate is on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the gate, wherein each of the source electrode and the drain electrode includes a conductive layer and a conductive oxide layer stacked from bottom to top.

Abstract: According to an embodiment of the present invention, a high electron mobility transistor (HEMT) includes: a buffer layer on a substrate; a carrier transit layer on the buffer layer; a carrier supply layer on the carrier transit layer; a gate electrode on the carrier supply layer; and a source and a drain adjacent to two sides of the gate electrode. Preferably, the carrier supply layer comprises a concentration gradient of aluminum (Al).

Abstract: According to an embodiment of the present invention, a high electron mobility transistor (HEMT) includes: a buffer layer on a substrate; a carrier transit layer on the buffer layer; a carrier supply layer on the carrier transit layer; a gate electrode on the carrier supply layer; and a source and a drain adjacent to two sides of the gate electrode. Preferably, the carrier supply layer comprises a concentration gradient of aluminum (Al).

Abstract: A buckle device includes a seat body, a belt body having saw-toothed sections, and a control member. An actuating portion and a linkage portion of the control member are pivotally connected to the seat body through a rotating shaft. The actuating portion and the linkage portion are provided with a first return elastic member and a second return elastic member, respectively. The tops and the bottoms of the actuating portion and the linkage portion are provided with raised blocks and raised teeth to engage with the saw-toothed sections, respectively. The user can pull the actuating portion with one hand for the raised teeth of the actuating portion and the linkage portion to disengage from the saw-toothed sections.

Abstract: A dynamic Gamma correction circuit, method thereof and a panel display apparatus are provided. The panel, display apparatus has a timing controller, a dynamic Gamma correction circuit, a display panel and a display driving circuit. The timing controller receives a first image data and then outputs a second image data and a timing control signal. The dynamic Gamma correction circuit receives and analyzes a distribution of gray levels of the first image data so as to dynamically correct and output a plurality of Gamma voltages. The display driving circuit electrically connects to the display panel, the timing controller and the dynamic Gamma correction circuit for receiving the second image data and the Gamma voltage so as to drive the display panel according to the timing control signal.

Abstract: A method for driving a liquid crystal display (LCD) apparatus, wherein the LCD apparatus comprises a plurality of scan rows, a plurality of data columns, and a data driving circuit, includes: driving a plurality of specific scan rows of the plurality of scan rows at a same time; extracting a plurality of pixel data, arranged into a first order, corresponding to the plurality of specific scan rows; arranging the plurality of pixel data into a second order different from the first order according to a connecting relationship between the data driving circuit and a plurality of pixels of the plurality of specific scan rows; and utilizing the data driving circuit to drive a plurality of pixels according to the plurality of pixel data corresponding to the second order.

Abstract: A driving method for driving a display apparatus is provided. The driving method includes: configuring a plurality of driving voltages corresponding to a plurality of gray scales, where the gray scales include a first gray scale and a second gray scale smaller than the first gray scale, and a first driving voltage corresponding to the first gray scale is lower than a second driving voltage corresponding to the second gray scale; and controlling the display apparatus to display a gray scale merely up to the second gray scale. In this way, the driving method hence reduces the response time of the display apparatus, which may be an LCD display panel.

Abstract: A display method with interlacing reversal scan and a device thereof are provided. The scan mode is interlacing reversal scan. Thus, in time and space, each color frame with poor luminance response can be alternately distributed on up-side and the down-side region of the frame instead on low-side region of the frame. Then, during the period of continuous frame displaying, the present invention may balance color distribution between the up-side and the down-side region, and effectively reduce the flicker phenomenon of the frame.

Abstract: A method for driving a color-sequential display suitable to reduce the color break-up phenomenon of the color-sequential display is disclosed. The method includes: dividing each sub-frame period into a data-writing period and a backlight turned-on period; within the data-writing period, transmitting a data of first color; during a first duration of the backlight turned-on period, turning on a first color backlight; during a second duration of the backlight turned-on period, turning on a second color backlight.

Abstract: A pixel dithering driving method and a timing controller using the same are provided. The method uses the N low order bits of M bits together with at least one virtual bit to build several pixel dithering patterns. After the timing controller uses M bits of data received by the timing controller to look up a specific high order bit value, a specific low order bit value, and a specific pixel dithering value corresponding to the M bits in a predetermined gray level look up table and decides the output gray levels according to the specific high order bit value, the timing controller can further select a specific pixel dithering pattern from the pixel dithering patterns mentioned above according to the specific low order bit value and the specific pixel dithering value.