Patents by Inventor Kuan-Lin HO

Kuan-Lin HO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210242119
    Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first under-bump metallization (UBM) pattern covered by a first dielectric layer, and the first UBM pattern includes a surface substantially leveled with a surface of the first dielectric layer. The circuit substrate is electrically coupled to the redistribution structure through a conductive joint disposed on the surface of the first UBM pattern. The insulating encapsulation is disposed on the redistribution structure to cover the circuit substrate.
    Type: Application
    Filed: June 29, 2020
    Publication date: August 5, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Lin Ho, Chin-Liang Chen, Jiun-Yi Wu, Chi-Yang Yu, Yu-Min Liang, Wei-Yu Chen
  • Publication number: 20210210464
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die and a second die, a first encapsulant, a second encapsulant and a RDL structure. The first die includes a first connector and a first protection layer covering sidewalls of the first connector, and the second die includes a second connector. The first encapsulant is at least disposed laterally between the first die and the second die to encapsulate first sidewalls of the first die and the second die that faces each other. The second encapsulant encapsulates second sidewalls of the first die and the second die. The RDL structure is disposed on and electrically connected to the first die and the second die. The top surfaces of the first protection layer, the first encapsulant, and the second encapsulant are in contact with a bottom surface of the RDL structure.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Chien-Hsun Lee, Kuan-Lin Ho, Yu-Min Liang
  • Patent number: 11011431
    Abstract: A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.
    Type: Grant
    Filed: September 12, 2020
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yang Yu, Chien-Kuo Chang, Chih-Hao Lin, Jung Tsung Cheng, Kuan-Lin Ho
  • Publication number: 20210125933
    Abstract: A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.
    Type: Application
    Filed: May 26, 2020
    Publication date: April 29, 2021
    Inventors: Wei-Yu Chen, Chun-Chih Chuang, Kuan-Lin Ho, Yu-Min Liang, Jiun Yi Wu
  • Patent number: 10957672
    Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, a second encapsulant, and a plurality of conductive terminals. The first encapsulant is at least disposed between the first die and the second die, and on the second die. The second encapsulant is aside the first die and the second die. The conductive terminals are electrically connected to the first die and the second die through a redistribution layer (RDL) structure. An interface is existed between the first encapsulant and the second encapsulant.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Chien-Hsun Lee, Kuan-Lin Ho, Yu-Min Liang
  • Publication number: 20210020606
    Abstract: A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Inventors: CHI-YANG YU, KUAN-LIN HO, CHIN-LIANG CHEN, YU-MIN LIANG
  • Publication number: 20200411385
    Abstract: A semiconductor structure includes a substrate including a first surface, a second surface opposite to the first surface, a sidewall substantially orthogonal to the first surface and the second surface; and a metallic layer surrounding and connected with the sidewall of the substrate, wherein the metallic layer includes an exposed surface substantially level with the first or second surface of the substrate. Further, a method of manufacturing the semiconductor structure is also disclosed.
    Type: Application
    Filed: September 12, 2020
    Publication date: December 31, 2020
    Inventors: CHI-YANG YU, CHIEN-KUO CHANG, CHIH-HAO LIN, JUNG TSUNG CHENG, KUAN-LIN HO
  • Patent number: 10879140
    Abstract: Disclosed herein is a device having a shaped seal ring comprising a workpiece, the workpiece comprising at least one dielectric layer disposed on a first side of a substrate, a seal ring disposed in the at least one dielectric layer, and at least one groove in the seal ring. A lid is disposed over the workpiece, the workpiece extending into a recess in the lid and a first thermal interface material (TIM) contacts the seal ring and the lid, with the first TIM extending into the at least one groove. The workpiece is mounted to the package carrier. A die is mounted over a first side of workpiece and disposed in the recess. A first underfill a disposed under the die and a second underfill is disposed between the workpiece and the package carrier. The first TIM is disposed between the first underfill and the second underfill.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yen Lin, Yu-Chih Liu, Chin-Liang Chen, Wei-Ting Lin, Kuan-Lin Ho
  • Patent number: 10867835
    Abstract: A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Lin Ho, Chin-Liang Chen, Wei-Ting Lin, Yu-Chih Liu, Shih-Yen Lin
  • Publication number: 20200328173
    Abstract: An integrated fan-out package includes a die, an encapsulant, a seed layer, a conductive pillar, a redistribution structure, and a buffer layer. The encapsulant encapsulates the die. The seed layer and the conductive pillar are sequentially stacked over the die and the encapsulant. The redistribution structure is over the die and the encapsulant. The redistribution structure includes a conductive pattern and a dielectric layer. The conductive pattern is directly in contact with the seed layer and the dielectric layer covers the conductive pattern and surrounds the seed layer and the conductive pillar. The buffer layer is disposed over the redistribution structure. The seed layer is separate from the dielectric layer by the buffer layer, and a Young's modulus of the buffer layer is higher than a Young's modulus of the dielectric layer of the redistribution structure.
    Type: Application
    Filed: June 29, 2020
    Publication date: October 15, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Hai-Ming Chen, Kuan-Lin Ho, Yu-Min Liang
  • Patent number: 10804245
    Abstract: A method of manufacturing a semiconductor structure includes providing a substrate including a redistribution layer (RDL) disposed over the substrate, disposing a first patterned mask over the RDL, disposing a first conductive material over the RDL exposed from the first patterned mask to form a first conductive pillar, removing the first patterned mask, disposing a second patterned mask over the RDL, disposing a second conductive material over the RDL exposed from the second patterned mask to form a second conductive pillar, removing the second patterned mask, disposing a first die over the first conductive pillar, and disposing a second die over the second conductive pillar. A height of the second conductive pillar is substantially greater than a height of the first conductive pillar.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yang Yu, Kuan-Lin Ho, Chin-Liang Chen, Yu-Min Liang
  • Patent number: 10777467
    Abstract: A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chi-Yang Yu, Chien-Kuo Chang, Chih-Hao Lin, Jung Tsung Cheng, Kuan-Lin Ho
  • Publication number: 20200286748
    Abstract: A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.
    Type: Application
    Filed: May 22, 2020
    Publication date: September 10, 2020
    Inventors: Chin-Liang CHEN, Wei-Ting LIN, Yu-Chih LIU, Kuan-Lin HO, Jason SHEN
  • Publication number: 20200279790
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.
    Type: Application
    Filed: May 14, 2020
    Publication date: September 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Kuan-Lin Ho, Yu-Min Liang, Wen-Lin Chen
  • Publication number: 20200219788
    Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
    Type: Application
    Filed: March 17, 2020
    Publication date: July 9, 2020
    Inventors: CHIN-LIANG CHEN, CHI-YANG YU, KUAN-LIN HO, YU-MIN LIANG
  • Patent number: 10700031
    Abstract: An integrated fan-out package includes a die, an encapsulant, a redistribution structure, a seed layer, conductive pillars, and a buffer layer. The encapsulant encapsulates the die. The redistribution structure is over the die and the encapsulant. The redistribution structure includes dielectric layers and conductive patterns. The dielectric layers are sequentially stacked and the conductive patterns are sandwiched between the dielectric layers. The seed layer and the conductive pillars are sequentially stacked over the redistribution structure. The seed layer is directly in contact with the conductive patterns closest to the conductive pillars. The buffer layer is disposed over the redistribution structure. The dielectric layer closest to the conductive pillars and the buffer layer are sandwiched between the seed layer and the conductive patterns closest to the conductive pillars.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Hai-Ming Chen, Kuan-Lin Ho, Yu-Min Liang
  • Patent number: 10685853
    Abstract: A lid attach process includes providing a substrate and a die attached to the substrate, providing a lid and dipping a periphery of the lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid, and positioning the lid over the die and placing the lid on a top of the substrate with the adhesive material being adapted to interface with a periphery of the substrate.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: June 16, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-Liang Chen, Wei-Ting Lin, Yu-Chih Liu, Kuan-Lin Ho, Jason Shen
  • Patent number: 10658263
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: May 19, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Yang Yu, Chin-Liang Chen, Kuan-Lin Ho, Yu-Min Liang, Wen-Lin Chen
  • Patent number: 10622278
    Abstract: A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a semiconductor substrate having a plurality of dies thereon; dispensing an underfill material and a molding compound to fill spaces beneath and between the dies; disposing a temporary carrier over the dies; thinning a thickness of the semiconductor substrate; performing back side metallization upon the thinned semiconductor substrate; removing the temporary carrier; and attaching a plate over the dies. An associated semiconductor structure is also disclosed.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chin-Liang Chen, Chi-Yang Yu, Kuan-Lin Ho, Yu-Min Liang
  • Publication number: 20200066598
    Abstract: A semiconductor structure includes a substrate including a first surface and a second surface opposite to the first surface; a dielectric layer disposed over the second surface or below the first surface; a polymeric layer disposed over or below the dielectric layer; an isolation layer surrounding and contacted with the substrate, the dielectric layer and the polymeric layer; a die disposed over the polymeric layer; a first conductive bump disposed below the first surface of the substrate; and a second conductive bump disposed between the second surface of the substrate and the die.
    Type: Application
    Filed: November 4, 2019
    Publication date: February 27, 2020
    Inventors: CHI-YANG YU, CHIEN-KUO CHANG, CHIH-HAO LIN, JUNG TSUNG CHENG, KUAN-LIN HO