Patents by Inventor Kuang-I Liu

Kuang-I Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11043251
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bo-Jhih Shen, Kuang-I Liu, Joung-Wei Liou, Jinn-Kwei Liang, Yi-Wei Chiu, Chin-Hsing Lin, Li-Te Hsu, Han-Ting Tsai, Cheng-Yi Wu, Shih-Ho Lin
  • Publication number: 20200270751
    Abstract: An enclosed-channel reactor system is provided, which includes: a reactor body having a plurality of enclosed channels therein; an upper cap disposed at one end of the reactor body and having an inlet port communicating with the plurality of enclosed channels; a lower cap disposed at the other end of the reactor body opposite to the upper cap and having an outlet port communicating with the plurality of enclosed channels; and at least a conduit plate disposed between the upper cap and the reactor body for guiding a precursor injected from the inlet port into the plurality of enclosed channels uniformly.
    Type: Application
    Filed: May 1, 2020
    Publication date: August 27, 2020
    Inventors: Tsong-Pyng Perng, Chi-Chung Kei, Chien-Pao Lin, Mrinalini Mishra, Sheng-Hsin Huang, Kuang-I Liu, Yu-Hsuan Yu
  • Patent number: 10676824
    Abstract: An enclosed-channel reactor system is provided, which includes: a reactor body having a plurality of enclosed channels therein; an upper cap disposed at one end of the reactor body and having an inlet port communicating with the plurality of enclosed channels; a lower cap disposed at the other end of the reactor body opposite to the upper cap and having an outlet port communicating with the plurality of enclosed channels; and at least a conduit plate disposed between the upper cap and the reactor body for guiding a precursor injected from the inlet port into the plurality of enclosed channels uniformly.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: June 9, 2020
    Assignee: National Tsing Hua University
    Inventors: Tsong-Pyng Perng, Chi-Chung Kei, Chien-Pao Lin, Mrinalini Mishra, Sheng-Hsin Huang, Kuang-I Liu, Yu-Hsuan Yu
  • Publication number: 20200176041
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
    Type: Application
    Filed: September 10, 2019
    Publication date: June 4, 2020
    Inventors: Bo-Jhih Shen, Kuang-I Liu, Joung-Wei Liou, Jinn-Kwei Liang, Yi-Wei Chiu, Chin-Hsing Lin, Li-Te Hsu, Han-Ting Tsai, Cheng-Yi Wu, Shih-Ho Lin
  • Publication number: 20170175268
    Abstract: An enclosed-channel reactor system is provided, which includes: a reactor body having a plurality of enclosed channels therein; an upper cap disposed at one end of the reactor body and having an inlet port communicating with the plurality of enclosed channels; a lower cap disposed at the other end of the reactor body opposite to the upper cap and having an outlet port communicating with the plurality of enclosed channels; and at least a conduit plate disposed between the upper cap and the reactor body for guiding a precursor injected from the inlet port into the plurality of enclosed channels uniformly.
    Type: Application
    Filed: April 18, 2016
    Publication date: June 22, 2017
    Inventors: Tsong-Pyng Perng, Chi-Chung Kei, Chien-Pao Lin, Mrinalini Mishra, Sheng-Hsin Huang, Kuang-I Liu, Yu-Hsuan Yu