Abstract: A conformable heat sink interface for an integrated circuit package comprises a mounting plate having a first surface and a deformable membrane having a portion bonded to a second surface of the plate. A cavity is between the second surface of the plate and the deformable membrane. A flowable heat transfer medium is within the cavity. The flowable heat transfer medium has a thermal conductivity of not less than 30 W/m K. The deformable membrane is to conform to a three-dimensional shape of an IC package and the mounting plate has a second surface that is to be adjacent to a heat sink base.

Abstract: A two-phase immersion cooling system for an integrated circuit assembly may be formed utilizing boiling enhancement structures formed on or directly attached to heat dissipation devices within the integrated circuit assembly, formed on or directly attached to integrated circuit devices within the integrated circuit assembly, and/or conformally formed over support devices and at least a portion of an electronic board within the integrated circuit assembly. In still a further embodiment, the two-phase immersion cooling system may include a low boiling point liquid including at least two liquids that are substantially immiscible with one another.

Abstract: A wire retracting device includes a base having a platform, a limiting board disposed on the base, a cover including a top surface and a side wall, a slide block slidably disposed on a sliding area, and a transmission wire disposed in an accommodating space formed between the cover and the base. An annular wall is arranged on the platform, and has a limiting portion that has a first stop portion and a second stop portion respectively formed on two sides thereof. A gap, in which the cover is limited to being movable, is formed between the limiting board and the platform. The top surface has a grooved opening, and a lever is arranged on an inner edge thereof. The side wall is disposed along an edge of the top surface. The sliding area is formed between the inner edge of the grooved opening and the annular wall.

Abstract: A connector controller controls a connector with a power pin, a communication pin, and a ground pin. The connector detects the voltage at the communication pin at least twice to generate first and second voltages respectively. A bus power is supplied at the power pin. The first voltage is detected when a bus current to/from the bus power is about zero. The connector controller controls the bus power in response to a difference between the first and second voltage.

Abstract: A multi-axis robot arm includes a pedestal, a plurality of knuckle modules and at least one telescopic arm module. Two ends of two adjacent knuckle modules close to and facing each other have a first connecting structure and a second connecting structure, respectively. The at least one telescopic arm module includes a telescopic tube and a telescopic shaft. One end of the telescopic tube is fastened to the first connecting structure. A surface of the other end of the telescopic tube faces towards the second connecting structure. One end of the telescopic shaft facing towards the first connecting structure projects into the telescopic tube. The other end of the telescopic shaft is fastened to the second connecting structure. The one end of the telescopic shaft is telescopically connected with and fastened in the telescopic tube.

Abstract: Embodiments disclosed herein include sockets and electronic packages with socket architectures. In an embodiment, a socket comprises a housing with a first surface and a second surface. In an embodiment, a plurality of interconnect pins pass through the housing. In an embodiment, an alignment hole is provided through the housing. In an embodiment, an alignment post extending out from the first surface of the housing is also provided.

Abstract: Techniques and mechanisms for coupling packaged devices with a socket device. In an embodiment, the socket device comprises a socket body structure and conductors extending therethrough. A pitch of the conductors is in a range of between 0.1 millimeters (mm) and 3 mm. First and second metallization structures also extend, respectively, from opposite respective sides of the socket body structure. In the socket body structure, a conductive shield structure, electrically coupled to the first and second metallization structures, substantially extends around one of the conductors. For each of the first and second metallization structures, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.

Abstract: A multi-axis robotic arm includes a pedestal, a plurality of knuckle module and at least one detachable arm module. One of the plurality of the knuckle modules is connected with the pedestal. Two knuckle modules are connected to a first connecting element and a second connecting element. The first connecting element has a first docking portion, and the second connecting element has a second docking portion. The first docking portion and the second docking portion are detachably docked with each other by a plurality of fasteners. The at least one arm module have a third docking portion and a fourth docking portion. The third docking portion is detachably docked with the first docking portion by the plurality of the fasteners. The fourth docking portion is detachably docked with the second docking portion by the plurality of the fasteners.

Abstract: A manufacturing method of a trench MOSFET includes forming a trench gate in an epitaxial layer having a first conductivity type on a substrate, performing implantations of a dopant having a second conductivity type on the epitaxial layer in which an implantation dose is gradually reduced toward the substrate, performing a first drive-in step to diffuse the dopant having the second conductivity type in an upper half of the epitaxial layer to form a body region, implanting a dopant having the first conductivity type on a surface of the epitaxial layer, performing a second drive-in step to diffuse the dopant having the first conductivity type to form a source region, comprehensively implanting the dopant having the second conductivity type at an interface of the body region and the source region to form an anti-punch through region having a doping concentration higher than that of the body region.

Abstract: Apparatuses, systems and methods associated with connector design for mating with integrated circuit packages are disclosed herein. In embodiments, a connector for mating with an integrated circuit (IC) package may include a housing with a recess to receive a portion of the IC package and a contact coupled to the housing and that extends into the recess. The contact may include a main body that extends from the housing into the recess and a curved portion that extends from an end of the main body, wherein the curved portion loops back and contacts the main body. Other embodiments may be described and/or claimed.

Abstract: Systems, apparatus, and/or processes directed to applying pressure to a socket to alter a shape of the socket to improve a connection between the socket and a substrate, printed circuit board, or other component. The socket may receive one or more chips, may be an interconnect, or may be some other structure that is part of a package. The shape of the socket may be flattened so that a side of the socket may form a high-quality physical and electrical coupling with the substrate.

Abstract: A trench MOSFET and a manufacturing method of the same are provided. The trench MOSFET includes a substrate, an epitaxial layer having a first conductive type, a gate in a trench in the epitaxial layer, a gate oxide layer, a source region having the first conductive type, and a body region and an anti-punch through region having a second conductive type. The anti-punch through region is located at an interface between the source region and the body region, and a doping concentration thereof is higher than that of the body region. The epitaxial layer has a first pn junction near the source region and a second pn junction near the substrate. N regions are divided into N equal portions between the two pn junctions, and N is an integer greater than 1. The closer the N regions are to the first pn junction, the greater the doping concentration thereof is.

Abstract: A multi-axis robot arm includes a pedestal, a plurality of knuckle modules and at least one telescopic arm module. Two ends of two adjacent knuckle modules close to and facing each other have a first connecting structure and a second connecting structure, respectively. The at least one telescopic arm module includes a telescopic tube and a telescopic shaft. One end of the telescopic tube is fastened to the first connecting structure. A surface of the other end of the telescopic tube faces towards the second connecting structure. One end of the telescopic shaft facing towards the first connecting structure projects into the telescopic tube. The other end of the telescopic shaft is fastened to the second connecting structure. The one end of the telescopic shaft is telescopically connected with and fastened in the telescopic tube.

Abstract: A multi-axis robotic arm includes a pedestal, a plurality of knuckle module and at least one detachable arm module. One of the plurality of the knuckle modules is connected with the pedestal. Two knuckle modules are connected to a first connecting element and a second connecting element. The first connecting element has a first docking portion, and the second connecting element has a second docking portion. The first docking portion and the second docking portion are detachably docked with each other by a plurality of fasteners. The at least one arm module have a third docking portion and a fourth docking portion. The third docking portion is detachably docked with the first docking portion by the plurality of the fasteners. The fourth docking portion is detachably docked with the second docking portion by the plurality of the fasteners.

Abstract: A gate structure for gallium nitride (GaN) high electron mobility transistor (HEMT) includes a heterogeneous structure, a doped GaN layer, an insulating layer, an undoped GaN layer, and a gate metal layer. The heterogeneous structure includes a channel layer and a barrier layer on the channel layer. The doped GaN layer is disposed on the barrier layer, the insulating layer is disposed on both sides of the top portion of the doped GaN layer, and the undoped GaN layer is disposed between the doped GaN layer and the insulating layer. The gate metal layer is disposed on the doped GaN layer and covers the insulating layer and the undoped GaN layer. The undoped GaN layer can protect the underlying doped GaN layer, and the insulating layer has the effect of preventing gate leakage.

Abstract: A method of manufacturing a gate structure for gallium nitride (GaN) high electron mobility transistor (HEMT) includes orderly forming a channel layer, a barrier layer, a doped GaN layer, an undoped GaN layer, and an insulating layer on a substrate, and then removing a portion of the insulating layer to form a trench. A gate metal layer is formed on the substrate to cover the insulating layer and the trench, and then a mask layer aligned with the trench is formed on the gate metal layer, wherein the mask layer partially overlaps the insulating layer. By using the mask layer as an etching mask, the exposed gate metal layer and the underlying insulating layer, the undoped GaN layer and the doped GaN layer are removed, and then the mask layer is removed.

Abstract: A gate structure for gallium nitride (GaN) high electron mobility transistor (HEMT) includes a heterogeneous structure, a doped GaN layer, an insulating layer, an undoped GaN layer, and a gate metal layer. The heterogeneous structure includes a channel layer and a barrier layer on the channel layer. The doped GaN layer is disposed on the barrier layer, the insulating layer is disposed on both sides of the top portion of the doped GaN layer, and the undoped GaN layer is disposed between the doped GaN layer and the insulating layer. The gate metal layer is disposed on the doped GaN layer and covers the insulating layer and the undoped GaN layer. The undoped GaN layer can protect the underlying doped GaN layer, and the insulating layer has the effect of preventing gate leakage.

Abstract: A method of manufacturing a gate structure for gallium nitride (GaN) high electron mobility transistor (HEMT) includes orderly forming a channel layer, a barrier layer, a doped GaN layer, an undoped GaN layer, and an insulating layer on a substrate, and then removing a portion of the insulating layer to form a trench. A gate metal layer is formed on the substrate to cover the insulating layer and the trench, and then a mask layer aligned with the trench is formed on the gate metal layer, wherein the mask layer partially overlaps the insulating layer. By using the mask layer as an etching mask, the exposed gate metal layer and the underlying insulating layer, the undoped GaN layer and the doped GaN layer are removed, and then the mask layer is removed.

Abstract: A conformable heat sink interface for an integrated circuit package comprises a mounting plate having a first surface and a deformable membrane having a portion bonded to a second surface of the plate. A cavity is between the second surface of the plate and the deformable membrane. A flowable heat transfer medium is within the cavity. The flowable heat transfer medium has a thermal conductivity of not less than 30 W/m K. The deformable membrane is to conform to a three-dimensional shape of an IC package and the mounting plate has a second surface that is to be adjacent to a heat sink base.

Abstract: A thermal heat for integrated circuit die processing is described that includes a thermal barrier. In one example, the thermal head has a ceramic heater configured to carry an integrated circuit die, a metal base, and a thermal barrier between the heater and the base.