Patents by Inventor Kuen-Long Chang

Kuen-Long Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190189222
    Abstract: A memory device is disclosed in the present invention, comprising a memory array, a logic circuit, a sense amplifier circuit and a read buffer. The logic circuit is configured to perform a read operation in response to a read command and a start address. During the read operation, the logic circuit finds a target data in the memory array. The sense amplifier circuit is configured to read the target data from the memory array during the read operation. The read buffer is configured to temporarily stores and outputs the target data during the read operation. When an interruption event occurs during the read operation, the read buffer preserves a buffer content of the read buffer, and the logic circuit records a read status.
    Type: Application
    Filed: December 14, 2017
    Publication date: June 20, 2019
    Inventors: Kuen-Long CHANG, Ken-Hui CHEN, Shang-Chi YANG
  • Patent number: 10289596
    Abstract: A memory device includes command logic allowing for a command protocol allowing interruption of a first command sequence, such as a page write sequence, and then to proceed directly to receive and decode a second command sequence, such as a read sequence, without latency associated, completing the first command sequence. Also, the command logic is configured to be responsive to a third command sequence after the second command sequence and its associated embedded operation have been completed, which completes the interrupted first command sequence and enables execution of an embedded operation identified by the first command sequence. A memory controller supporting such protocols is described.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: May 14, 2019
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ken-Hui Chen, Kuen-Long Chang, Su-Chueh Lo, Chun-Yu Liao
  • Publication number: 20190073300
    Abstract: A nested wrap-around technology includes an address counter and associated logic for generating addresses to perform a nested wrap-around access operation. The nested wrap-around access operation may be a read or a write operation. A wrap-around section length and a wrap-around count define a wrap-around block. A wrap starting address, initially set to a supplied start address, is offset from a lower boundary of a wrap-around section. Access starts at a wrap starting address and proceeds in a wrap-around manner within a wrap-around section. After access of the address immediately preceding the wrap starting address, the wrap starting address is incremented by the wrap-around section length, or, if the wrap-around section is the last one in the wrap-around block, the wrap starting address is set to the lower boundary of the wrap-around block plus the offset. Access continues until a termination event.
    Type: Application
    Filed: November 5, 2018
    Publication date: March 7, 2019
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuen-Long Chang, Ken-Hui Chen, Chin-Hung Chang
  • Patent number: 10162751
    Abstract: A nested wrap-around technology includes an address counter and associated logic for generating addresses to perform a nested wrap-around access operation. The nested wrap-around access operation may be a read or a write operation. A wrap-around section length and a wrap-around count define a wrap-around block. A wrap starting address, initially set to a supplied start address, is offset from a lower boundary of a wrap-around section. Access starts at a wrap starting address and proceeds in a wrap-around manner within a wrap-around section. After access of the address immediately preceding the wrap starting address, the wrap starting address is incremented by the wrap-around section length, or, if the wrap-around section is the last one in the wrap-around block, the wrap starting address is set to the lower boundary of the wrap-around block plus the offset. Access continues until a termination event.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: December 25, 2018
    Assignee: Macronix International Co., Ltd.
    Inventors: Kuen-Long Chang, Ken-Hui Chen, Chin-Hung Chang
  • Publication number: 20180342302
    Abstract: The embodiment of the present invention discloses a memory device and a method for operating the same. The memory device includes a memory array and a logic circuit. The logic circuit is coupled to the memory array, and is configured to perform a corresponding operation in response to an operation command from a controller. When an interruption event occurs during the corresponding operation, the logic circuit records a memory status, and the logic circuit further is configured to output the memory status to the controller in response to a status read command from the controller.
    Type: Application
    Filed: December 14, 2017
    Publication date: November 29, 2018
    Inventors: Kuen-Long CHANG, Ken-Hui CHEN, Su-Chueh LO, Chun-Yu LIAO
  • Publication number: 20180335980
    Abstract: A memory device includes a memory including first and second pages in first and second banks, respectively, an address decoder mapping command addresses to physical addresses. The memory device further includes circuitry configured to maintain a status indicating a most recently written page, decode received command sequences including command addresses and implementing an operation including (i) responsive to receiving a command sequence including a read command address that is pre-configured for reading data, causing the address decoder to map the read command address to one of the first and second pages selected according to the status, and (ii) responsive to receiving a second command sequence including a write command address that is pre-configured for writing data, causing the address decoder to map the write command address to one of the first and second pages selected according to the status.
    Type: Application
    Filed: February 7, 2018
    Publication date: November 22, 2018
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuen-Long CHANG, Ken-Hui CHEN, Su-Chueh LO, Shang-Chi YANG
  • Patent number: 10095617
    Abstract: A memory device includes an input/output interface configured to receive and output signals. The input/output interface is configured to receive a memory address to be accessed and data sequence information within a clock cycle or at a rising or falling edge of a clock cycle. The data sequence information specifies an input or output data sequence.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: October 9, 2018
    Assignee: Macronix International Co., Ltd.
    Inventors: Kuen-Long Chang, Su-Chuch Lo, Chao Hsin Lin, Ken-Hui Chen
  • Publication number: 20180278418
    Abstract: A system including a host and a guest device, where the guest device can be implemented on a single packaged integrated circuit or a multichip circuit and have logic to use a physical unclonable function to produce a security key. The device can include logic on the guest to provide the PUF key to the host in a secure manner. The physical unclonable function can use entropy derived from non-volatile memory cells to produce the initial key. Logic is described to disable changes to PUF data, and thereby freeze the key after it is stored in the set.
    Type: Application
    Filed: May 21, 2018
    Publication date: September 27, 2018
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuen-Long CHANG, Ken-Hui CHEN, Chin-Hung CHANG
  • Publication number: 20180123808
    Abstract: A device which can be implemented on a single packaged integrated circuit or a multichip includes a plurality of non-volatile memory cells, and logic to use a physical unclonable function to produce an initial key and to store the initial key in a set of non-volatile memory cells in the plurality of non-volatile memory cells. The device can include logic to use a random number generator to generate a random number, and logic to combine the initial key and the random number to produce an enhanced key. The physical unclonable function can use entropy derived from non-volatile memory cells in the plurality of non-volatile memory cells to produce the initial key. Logic is described to disable changes to data in the set of non-volatile memory cells, and thereby freeze the key after it is stored in the set.
    Type: Application
    Filed: December 28, 2017
    Publication date: May 3, 2018
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chun-Hsiung HUNG, Kuen-Long CHANG, Ken-Hui CHEN, Shih-Chang HUANG
  • Patent number: 9940048
    Abstract: Methods for protecting data on an integrated circuit including a memory are described. One method includes storing nonvolatile protection codes on the integrated circuit. The nonvolatile protection codes have a first value indicating a protected state or a second value indicating an unprotected state for respective sectors in a plurality of sectors of the memory. The method includes storing volatile protection codes on the integrated circuit. The volatile protection codes have a first value indicating a protected state or a second value indicating an unprotected state for respective sectors in the plurality of sectors. The method includes blocking modification in a particular sector using circuitry on the integrated circuit when the volatile protection code for the particular sector has the first value, else allowing modification in the particular sector, and setting the volatile protection codes to values of the nonvolatile protection codes in an initialization procedure.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: April 10, 2018
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chun-Hsiung Hung, Kuen-Long Chang, Ken-Hui Chen, Su-Chueh Lo
  • Publication number: 20180039784
    Abstract: A system and method for utilizing a security key stored in non-volatile memory, and for generating a PUF-based data set on an integrated circuit including non-volatile memory cells, such as flash memory cells, are described. The method includes storing a security key in a particular block in a plurality of blocks of the non-volatile memory array; utilizing, in a security logic circuit coupled to the non-volatile memory array, the security key stored in the particular block in a protocol to enable access via a port by external devices or communication networks to data stored in blocks in the plurality of blocks; and enabling read-only access to the particular block by the security logic for use in the protocol, and preventing access to the particular block via the port.
    Type: Application
    Filed: May 22, 2017
    Publication date: February 8, 2018
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chun-Hsiung Hung, Kuen-Long Chang, Ken-Hui Chen, Shih-Chang Huang
  • Publication number: 20180039581
    Abstract: A system and method for utilizing a security key stored in non-volatile memory, and for generating a PUF-based data set on an integrated circuit including non-volatile memory cells, such as flash memory cells, are described. The method includes storing a security key in a particular block in a plurality of blocks of the non-volatile memory array; utilizing, in a security logic circuit coupled to the non-volatile memory array, the security key stored in the particular block in a protocol to enable access via a port by external devices or communication networks to data stored in blocks in the plurality of blocks; and enabling read-only access to the particular block by the security logic for use in the protocol, and preventing access to the particular block via the port.
    Type: Application
    Filed: May 22, 2017
    Publication date: February 8, 2018
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chun-Hsiung Hung, Kuen-Long Chang, Ken-Hui Chen, Shih-Chang Huang
  • Publication number: 20180040356
    Abstract: A system and method for utilizing a security key stored in non-volatile memory, and for generating a PUF-based data set on an integrated circuit including non-volatile memory cells, such as flash memory cells, are described. The method includes storing a security key in a particular block in a plurality of blocks of the non-volatile memory array; utilizing, in a security logic circuit coupled to the non-volatile memory array, the security key stored in the particular block in a protocol to enable access via a port by external devices or communication networks to data stored in blocks in the plurality of blocks; and enabling read-only access to the particular block by the security logic for use in the protocol, and preventing access to the particular block via the port.
    Type: Application
    Filed: May 22, 2017
    Publication date: February 8, 2018
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chun-Hsiung Hung, Kuen-Long Chang, Ken-Hui Chen, Shih-Chang Huang
  • Patent number: 9881654
    Abstract: An integrated circuit comprises a power supply input pin receiving an off-chip supply voltage having a variable current, an on-chip power source powered by the off-chip supply voltage and providing a regulated current, a memory array, and a set of one or more circuits coupled to the memory array and powered by the regulated current from the on-chip power source. The IC can include control circuitry performing memory operations on the memory array, said control circuitry powered by at least the off-chip supply voltage from the power supply pin.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: January 30, 2018
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wu-Chin Peng, Chun-Yi Lee, Ken-Hui Chen, Kuen-Long Chang, Chun Hsiung Hung
  • Patent number: 9876493
    Abstract: A decode switch and a method for controlling a decode switch are provided. The decode switch includes a power source providing a first voltage, a source capacitance coupled to the power source, and a target capacitance coupled to the power source. The power source charges the source capacitance to the first voltage. The source capacitance is connected to the target capacitance and the source capacitance charges the target capacitance to a second voltage. The power source charges the target capacitance from the second voltage to the first voltage.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: January 23, 2018
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Yi-Fan Chang, Chun-Yi Lee, Ken-Hui Chen, Kuen-Long Chang, Chun-Hsiung Hung
  • Patent number: 9852811
    Abstract: In accordance with the disclosure, there is provided a memory device configured to implement an error detection protocol. The memory device includes a memory array and a first input for receiving a control signal corresponding to a command cycle. The memory device also includes a second input for receiving an access control signal during a command cycle and for receiving an error detection signal during the command cycle, wherein the error detection signal includes information corresponding to the access control signal. The memory device further includes control logic configured to verify the correctness of the access control signal by a comparison with the error detection signal and perform an operation on the memory array during the command cycle when the correctness of the access control signal is verified.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: December 26, 2017
    Assignee: Macronix International Co., Ltd.
    Inventors: Kuen Long Chang, Ken Hui Chen, Su Chueh Lo, Chia-Feng Cheng
  • Publication number: 20170358357
    Abstract: A memory device and an operating method thereof are provided. The memory device includes a first memory array, a first row decoder, a first column decoder, a second memory array, a second row decoder and a second column decoder. The first memory array and the second memory array are different type memories and formed in a single memory die of a wafer.
    Type: Application
    Filed: December 27, 2016
    Publication date: December 14, 2017
    Inventors: Chun-Hsiung Hung, Kuen-Long Chang, Ken-Hui Chen, Su-Chueh Lo, Ming-Chih Hsieh
  • Publication number: 20170351636
    Abstract: A memory device includes command logic allowing for a command protocol allowing interruption of a first command sequence, such as a page write sequence, and then to proceed directly to receive and decode a second command sequence, such as a read sequence, without latency associated, completing the first command sequence. Also, the command logic is configured to be responsive to a third command sequence after the second command sequence and its associated embedded operation have been completed, which completes the interrupted first command sequence and enables execution of an embedded operation identified by the first command sequence. A memory controller supporting such protocols is described.
    Type: Application
    Filed: January 20, 2017
    Publication date: December 7, 2017
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ken-Hui Chen, Kuen-Long Chang, Su-Chueh Lo, Chun-Yu Liao
  • Publication number: 20170308463
    Abstract: A nested wrap-around technology includes an address counter and associated logic for generating addresses to perform a nested wrap-around access operation. The nested wrap-around access operation may be a read or a write operation. A wrap-around section length and a wrap-around count define a wrap-around block. A wrap starting address, initially set to a supplied start address, is offset from a lower boundary of a wrap-around section. Access starts at a wrap starting address and proceeds in a wrap-around manner within a wrap-around section. After access of the address immediately preceding the wrap starting address, the wrap starting address is incremented by the wrap-around section length, or, if the wrap-around section is the last one in the wrap-around block, the wrap starting address is set to the lower boundary of the wrap-around block plus the offset. Access continues until a termination event.
    Type: Application
    Filed: April 26, 2016
    Publication date: October 26, 2017
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Kuen-Long Chang, Ken-Hui Chen, Chin-Hung Chang
  • Patent number: 9678829
    Abstract: An erasing method of a memory device is provided. The memory device includes a memory controller and a memory array having a first memory region and a second memory region. The first memory region and the second memory region share the same well. The erasing method comprising steps of: erasing the first memory region; and selectively programming the second memory region according to an error correction code algorithm.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: June 13, 2017
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Chin-Hung Chang, Chia-Feng Cheng, Yu-Chen Wang, Ken-Hui Chen, Kuen-Long Chang