Patents by Inventor Kuen-Ru Chuang

Kuen-Ru Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150123151
    Abstract: A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.
    Type: Application
    Filed: January 12, 2015
    Publication date: May 7, 2015
    Inventors: Min-Hsun HSIEH, Kuen-Ru CHUANG, Shu-Wen SUNG, Chia-Cheng LIU, Chao-Nien HUANG, Shane-Shyan WEY, Chih-Chiang LU, Ming-Jiunn JOU
  • Patent number: 8932885
    Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: January 13, 2015
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou
  • Patent number: 8344353
    Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
    Type: Grant
    Filed: May 24, 2011
    Date of Patent: January 1, 2013
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou
  • Patent number: 6127693
    Abstract: The invention provides a novel polymer light-emitting diode (LED) which can emit near white light with a broad spectrum, which LED comprises a transparent electrode as an anode, a metal electrode as a cathode, an organic light-emitting layer, and a hole transport layer and/or an electron transport layer, wherein the organic light-emitting layer contains a blend of a blue light-emitting poly (paraphenylene vinylene) copolymer and a red light-emitting alkoxy-substrituted PPV derivative in an appropriate relative ratio, such that, the novel LED can emit sun light-like yellowish white light with an broad electroluminescent spectrum covering the whole range of visible light without varying as the voltage increased. And wherein, by virture of introducing a hole transport layer and/or electron transport layer, the turn-on voltage of the device can be lowered and emission efficiency thereof is increased.
    Type: Grant
    Filed: July 2, 1998
    Date of Patent: October 3, 2000
    Assignee: National Science Council of Republic of China
    Inventors: Shou-An Chen, En-Chung Chang, Kuen-Ru Chuang
  • Patent number: RE42422
    Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
    Type: Grant
    Filed: March 15, 2007
    Date of Patent: June 7, 2011
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou