Patents by Inventor Kui Chen

Kui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200257915
    Abstract: Systems, assemblies, and methods for detecting changes in polarization states are described. Example systems may include a light receiving unit including a sensor and a receiving polarizer. The sensor is configured to sense light from a polarized light source deflected through the receiving polarizer by a light directing article. The sensor is configured to generate a signal indicative a received polarization state of light deflected by the light directing articles. Such systems may be coupled to vehicles and may be useful for sensor-detectable signs, indicia, and markings to facilitate automated or assisted vehicular transport.
    Type: Application
    Filed: October 25, 2018
    Publication date: August 13, 2020
    Inventors: Jonah Shaver, Susannah C. Clear, John A. Wheatley, Kui Chen-Ho
  • Publication number: 20200233268
    Abstract: Optical constructions are disclosed. A disclosed optical construction includes a reflective polarizer layer, and an optical film that is disposed on the reflective polarizer layer. The optical film has an optical haze that is not less than about 50%. Substantial portions of each two neighboring major surfaces in the optical construction are in physical contact with each other. The optical construction has an axial luminance gain that is not less than about 1.2.
    Type: Application
    Filed: April 6, 2020
    Publication date: July 23, 2020
    Inventors: Encai HAO, Fei LU, William Blake KOLB, Brian W. OSTLIE, Adam D. HAAG, Michael Benton FREE, William D. COGGIO, Michael L. STEINER, Soemantri WIDAGDO, Kui CHEN-HO, Lan H. LIU, Robert F. KAMRATH, Scott M. TAPIO, John A. WHEATLEY, Charles D. HOYLE, Michael F. WEBER
  • Publication number: 20200176309
    Abstract: In a method of manufacturing a semiconductor device, a first source/drain structure is formed over a substrate, one or more first insulating layers are formed over the first source/drain structure, a first opening is formed in the one or more first insulating layers, the first opening is filled with a first conductive material to form a first lower contact in contact with the first source/drain structure, one or more second insulating layers are formed over the first lower contact, a second opening is formed in the one or more second insulating layers to at least partially expose the first lower contact, a first liner layer is formed on at least a part of an inner side face of the second opening, and the second opening is filled with a second conductive material to form a first upper contact in contact with the first lower contact without the first liner layer.
    Type: Application
    Filed: November 20, 2019
    Publication date: June 4, 2020
    Inventor: Huang-Kui CHEN
  • Publication number: 20200170581
    Abstract: The present invention provides a system for real-time pain detection, which comprises a means for acquiring biomedical signals relating to pain in a subject in need thereof, a computing means for transforming the acquired biomedical signals during a given period of time into the signal data for measurement of pain, analyzing the data to divide into two or more models, including at least a pain model which is defined by the data showing a peak-shaped profile and a non-pain model which is defined by the data showing a flat profile, whereby the pain status of the subject is measured based on the results of the analysis, a process means for generating an index of pain using the results of the analysis depending on the subject's demands or sensation, and a display showing the pain status of the subject.
    Type: Application
    Filed: November 29, 2019
    Publication date: June 4, 2020
    Applicant: CJSHINE TECHNOLOGY COMPANY LTD.
    Inventors: Lee-Kui CHEN, Tzu-Kuei SHEN
  • Patent number: 10649274
    Abstract: Optical constructions are disclosed. A disclosed optical construction includes a reflective polarizer layer, and an optical film that is disposed on the reflective polarizer layer. The optical film has an optical haze that is not less than about 50%. Substantial portions of each two neighboring major surfaces in the optical construction are in physical contact with each other. The optical construction has an axial luminance gain that is not less than about 1.2.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: May 12, 2020
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Encai Hao, Fei Lu, William Blake Kolb, Brian W. Ostlie, Adam D. Haag, Michael Benton Free, William D. Coggio, Michael L. Steiner, Soemantri Widagdo, Kui Chen-Ho, Lan H. Liu, Robert F. Kamrath, Scott M. Tapio, John A. Wheatley, Charles D. Hoyle, Michael F. Weber
  • Publication number: 20200001406
    Abstract: A micro/nanoparticle-reinforced composite solder for low-temperature soldering and a preparation method thereof belong to the manufacturing field of lead-free low-temperature soldering solders. Micro/nanoparticle-reinforced tin-based alloy solder powder is formed by diffusely mixing micro/nano-sized Cu, Ag and Sb particles with a molten metal tin and atomizing the mixture, and then blended with low-melting-point SnBi-based alloy solder powder and a conventional flux to prepare a micro/nanoparticle-reinforced composite solder. In soldering at a temperature below 200° C.
    Type: Application
    Filed: December 7, 2017
    Publication date: January 2, 2020
    Applicant: Shenzhen Fitech Co., Ltd.
    Inventors: Pu XU, Siyuan WANG, Daoke YU, Kui CHEN, Jainhao SHI
  • Publication number: 20200003935
    Abstract: Retroreflecting articles are described. In particular, retroreflecting articles including a quarter wave retarder and a retroreflecting layer are described. The retarder is rotationally invariant and the retroreflecting layer is non-depolarizing. Such articles may be useful for sensor-detectable signs, labels, and garments.
    Type: Application
    Filed: September 27, 2017
    Publication date: January 2, 2020
    Inventors: John A. Wheatley, Michael A. McCoy, Tien Yi T.H. Whiting, Guanglei Du, Neeraj Sharma, Kui Chen-Ho, Kenneth A. Epstein
  • Publication number: 20190391304
    Abstract: The present disclosure includes in one instance an optical article comprising a data rich plurality of retroreflective meats that are configured in a spatially defined arrangement, where the plurality of retroreflective elements comprise retroreflective elements having at least two different retroreflective properties, and where data rich means information that is readily machine interpretable. The present disclosure also includes a system comprising the previously mentioned optical article, an optical system, and an inference engine for interpreting and classifying the plurality of retroreflective elements wherein the optical system feeds data to the inference engine.
    Type: Application
    Filed: September 27, 2017
    Publication date: December 26, 2019
    Inventors: Michael A. McCoy, Glenn E. Casner, Anne C. Gold, Silvia Geciova-Borovova Guttmann, Charles A. Shaklee, Robert W. Shannon, Gautam Singh, Guruprasad Somasundaram, Andrew H. Tilstra, John A. Wheatley, Caroline M. Ylitalo, Arash Sangari, Alexandra R. Cunliffe, Jonathan D. Gandrud, Kui Chen-Ho, Travis L. Potts, Maja Giese, Andreas M. Geldmacher, Katja Hansen, Markus G.W. Lierse, Neeraj Sharma
  • Publication number: 20190355716
    Abstract: The present disclosure provides an integrated circuit (IC) structure that includes a fin active region on a substrate; a metal gate stack on the fin active region; a source and a drain on the fin active region, wherein the metal gate stack spans from the source to the drain; an interlayer dielectric (ILD) layer disposed on the source and the drain; a first conductive feature and a second conductive feature formed in the ILD layer and being aligned on the source and the drain, respectively; and a dielectric material layer surrounding the first and second conductive features. The dielectric material layer continuously extends to a bottom surface of the first conductive feature and isolates the first conductive feature from the source and the second conductive feature contacts the drain.
    Type: Application
    Filed: July 29, 2019
    Publication date: November 21, 2019
    Inventors: Fan-Shuen Meng, Huang-Kui Chen, Min-Yann Hsieh
  • Patent number: 10406845
    Abstract: An article may include a biodata page defining a perimeter including an edge and a hinge layer attached to at least a portion of the biodata page. The hinge layer comprises a cross-linked polyurethane. In some examples, the hinge layer may include a cross-linked thermoset polyurethane.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 10, 2019
    Assignee: GEMALTO SA
    Inventors: Steven J. Rhyner, Christopher K. Haas, Todd D. Jones, Kui Chen-Ho, Krystal K. Hunt, Ryan E. Marx
  • Patent number: 10366982
    Abstract: The present disclosure provides a method of fabricating an integrated circuit in accordance with some embodiments. The method includes forming a source and a drain on a fin active region of a semiconductor substrate; depositing an interlayer dielectric (ILD) layer on the source and drain; patterning the ILD layer to form a first contact hole and a second contact hole aligning with the source and drain, respectively; forming a dielectric material layer in the first contact hole; and forming a first conductive feature and a second conductive feature in the first and second contact holes, respectively.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: July 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fan-Shuen Meng, Huang-Kui Chen, Min-Yann Hsieh
  • Publication number: 20190163980
    Abstract: In some examples, an optically active article includes a retroreflective substrate; and at least one security element disposed at the retroreflective substrate; an article message disposed at the retroreflective substrate, and wherein the at least one security element comprises validation information that is detectable outside a visible light spectrum, and wherein a combination of the article message and the validation information of the at least one security element indicates whether the optically active article is counterfeit.
    Type: Application
    Filed: May 12, 2017
    Publication date: May 30, 2019
    Applicant: 3M Innovative Properties Company
    Inventors: Justin M. JOHNSON, James W. HOWARD, James B. SNYDER, Kui CHEN-HO, Suman K. PATEL, Travis L. POTTS, Carla H. BARNES, Tadesse G. NIGATU
  • Publication number: 20190164957
    Abstract: The present disclosure provides a method of fabricating an integrated circuit in accordance with some embodiments. The method includes forming a source and a drain on a fin active region of a semiconductor substrate; depositing an interlayer dielectric (ILD) layer on the source and drain; patterning the ILD layer to form a first contact hole and a second contact hole aligning with the source and drain, respectively; forming a dielectric material layer in the first contact hole; and forming a first conductive feature and a second conductive feature in the first and second contact holes, respectively.
    Type: Application
    Filed: January 31, 2018
    Publication date: May 30, 2019
    Inventors: Fan-Shuen Meng, Huang-Kui Chen, Min-Yann Hsieh
  • Patent number: 10282583
    Abstract: A fingerprint imaging system is described comprising a film including an optically transparent self-wetting adhesive layer adhered to an imaging surface of an electronic optical image sensor. Also described is a method of use of an optical imaging system, and a film and multilayer film suitable for use with a fingerprint imaging system.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: May 7, 2019
    Assignee: GEMALTO SA
    Inventors: Ann R. Fornof, Duane D. Fansler, Kui Chen-Ho, James P. DiZio, Kiran S. Kanukurthy, John C. Hulteen, Stephen A. Johnson, Onur Sinan Yordem
  • Patent number: 10213993
    Abstract: Described herein is composite article comprising a substrate; and on at least one face of the substrate a multilayered coating disposed thereon.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: February 26, 2019
    Assignee: 3M Innovative Properties Company
    Inventors: Kui Chen-Ho, Caroline M. Ylitalo, Yu Yang, Yongshang Lu, Alan L. Levin, Hyacinth L. Lechuga, Steven H. Kong, Suresh S. Iyer, Ingrid N. Haugan, Mahfuza B. Ali
  • Publication number: 20190035850
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.
    Type: Application
    Filed: September 18, 2018
    Publication date: January 31, 2019
    Inventors: Woan-Yun HSIAO, Huang-Kui CHEN, Tzong-Sheng CHANG, Ya-Chin KING, Chrong-Jung LIN
  • Patent number: 10090360
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.
    Type: Grant
    Filed: October 16, 2015
    Date of Patent: October 2, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Woan-Yun Hsiao, Ya-Chin King, Chrong-Jung Lin, Huang-Kui Chen, Tzong-Sheng Chang
  • Patent number: 10063337
    Abstract: An arrayed waveguide grating (AWG) based multi-core and multi-wavelength interconnection network, comprising N upper-level switches, N lower-level switches, and a network intermediate stage, with each upper- and lower-level switches has N CWDM optical transceiving modules. The N optical transceiving modules of each upper-level switch is connected with n m×1 multi-core optical multiplexing modules, the N optical transceiving modules of each lower-level switch is connected with n 1×m multi-core demultiplexing modules, the network intermediate stage is comprised of n2 r×r multi-core and multi-wavelength wiring modules. The upper-level multi-core optical multiplexing modules, the lower-level multi-core demultiplexing modules, and the n2 r×r multi-core and multi-wavelength wiring modules of the network intermediate stage are connected via an m-core MPO-MPO optical fiber jumper. The wiring complexity of the interconnection network is O(N2/r), with employment of a wavelength set of ?={?0, . . . , ?k-1}.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: August 28, 2018
    Assignee: Shanghai Jiao Tong University
    Inventors: Tong Ye, Kui Chen, Hao He, Weisheng Hu
  • Patent number: 10017001
    Abstract: Laser-personalizable security articles include multi-layer security documents. The multi-layer security document includes an optically transparent cover layer, a composite image and an imagable layer adjacent to the cover layer. The first surface of the cover layer is at least partially a microstructured surface, where the microstructured surface forms microlenses or a lenticular surface. The composite image is made by a collection of complete or partial images viewed through the microstructured surface of the cover layer. The composite image is located on or within the second surface of the cover layer. The imagable layer is a laser imagable layer. When imaged, a personalized second composite three dimensional image is created on or in the imagable layer.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: July 10, 2018
    Assignee: 3M Innovative Properties Company
    Inventors: Kui Chen-Ho, Christopher K. Haas, Douglas S. Dunn, Steven Hin-Chung Kong, David B. Olson, Randy A. Larson, Travis L. Potts
  • Publication number: 20170293056
    Abstract: Provided herein are retroreflective colored article having a predetermined pattern of beaded and unbeaded regions and at least one polymeric color layer (130) covering at least a portion of the beaded and unbeaded regions, a reflector layer (140) covering the colour layer, and a carrier (150). Also disclosed are methods for making the articles.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 12, 2017
    Inventors: Kui Chen-Ho, Matthew S. Stay, Ying Xia, Syud M. Ahmed, Cordell M. Hardy, Shri Niwas, Michael A. McCoy, Mikhail L. Pekurovsky