Patents by Inventor Kumaragurubaran Somu

Kumaragurubaran Somu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Drive method for memory element and storage device using memory element
    Patent number: 9190145
    Abstract: In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: November 17, 2015
    Assignees: National Institute of Advanced Industrial Science and Technology, Funai Electric Co., Ltd.
    Inventors: Tsuyoshi Takahashi, Yuichiro Masuda, Shigeo Furuta, Touru Sumiya, Masatoshi Ono, Yutaka Hayashi, Toshimi Fukuoka, Tetsuo Shimizu, Kumaragurubaran Somu, Hiroshi Suga, Yasuhisa Naitou
  • Drive method for memory element, and storage device using memory element
    Patent number: 9135990
    Abstract: A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: September 15, 2015
    Assignees: National Institute of Advanced Industrial Science and Technology, Funai Electric Co., Ltd.
    Inventors: Tsuyoshi Takahashi, Yuichiro Masuda, Shigeo Furuta, Touru Sumiya, Masatoshi Ono, Yutaka Hayashi, Toshimi Fukuoka, Tetsuo Shimizu, Kumaragurubaran Somu, Hiroshi Suga, Yasuhisa Naitou
  • Drive Method for Memory Element and Storage Device Using Memory Element
    Publication number: 20130170285
    Abstract: In a drive method for a memory element that includes an insulating substrate, a first electrode and a second electrode provided on the insulating substrate, and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of the order of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs, and that can perform a transition from a predetermined low-resistance state to a predetermined high-resistance state and a transition from the high-resistance state to the low-resistance state, a current pulse is applied to the memory element by a constant current circuit upon the transition from the high-resistance state to the low-resistance state.
    Type: Application
    Filed: August 25, 2011
    Publication date: July 4, 2013
    Applicants: National Institute of Advance Industrial Science and Technology, Funai Electric Co., Ltd., Funai Electric Advanced Applied Technology Research Institute Inc.
    Inventors: Tsuyoshi Takahashi, Yuichiro Masuda, Shigeo Furuta, Touru Sumiya, Masatoshi Ono, Yutaka Hayashi, Toshimi Fukuoka, Tetsuo Shimizu, Kumaragurubaran Somu, Hiroshi Suga, Yasuhisa Naitou
  • Drive Method for Memory Element, and Storage Device Using Memory Element
    Publication number: 20130155757
    Abstract: A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
    Type: Application
    Filed: August 25, 2011
    Publication date: June 20, 2013
    Applicants: National Institute of Advanced Industrial Science and Technology, Funai Electric Co., Ltd., Funai Electric Advanced Applied Technology Research Institute Inc.
    Inventors: Tsuyoshi Takahashi, Yuichiro Masuda, Shigeo Furuta, Touru Sumiya, Masatoshi Ono, Yutaka Hayashi, Toshimi Fukuoka, Tetsuo Shimizu, Kumaragurubaran Somu, Hiroshi Suga, Yasuhisa Naitou