Patents by Inventor Kumiko Yamazaki

Kumiko Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11999616
    Abstract: A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a<3.00 is satisfied.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: June 4, 2024
    Assignee: TDK CORPORATION
    Inventors: Kumiko Yamazaki, Wakiko Sato, Junichi Yamazaki
  • Publication number: 20240011152
    Abstract: A dielectric composition comprises a crystal of an oxynitride. A peak attributed to absence of a center of symmetry of the crystal of the oxynitride is detected by Raman spectroscopy of the dielectric composition within a Raman shift range of 500 cm?1 or less.
    Type: Application
    Filed: July 7, 2023
    Publication date: January 11, 2024
    Applicants: TDK CORPORATION, NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Kumiko YAMAZAKI, Shuto KANO, Yuji MASUBUCHI, Shinichi KIKKAWA
  • Publication number: 20230027057
    Abstract: An amorphous dielectric includes a compound represented by A1+?BOxNy. ?0.3???0.3, 0<x?3.50, 0?y?1.00, and 6.70?2x+3y?7.30 are satisfied. A sum of an average valence of A-site ions and an average valence of B-site ions is 6.70 to 7.30.
    Type: Application
    Filed: July 6, 2022
    Publication date: January 26, 2023
    Applicant: TDK CORPORATION
    Inventors: Kumiko YAMAZAKI, Shuto KANO, Yuji UMEDA, Hiroki KITAMURA, Takeshi SHIBAHARA, Junichi YAMAZAKI
  • Patent number: 11532435
    Abstract: A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: December 20, 2022
    Assignee: TDK CORPORATION
    Inventors: Kumiko Yamazaki, Takeshi Shibahara, Junichi Yamazaki
  • Publication number: 20210241974
    Abstract: A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.
    Type: Application
    Filed: August 27, 2019
    Publication date: August 5, 2021
    Applicant: TDK CORPORATION
    Inventors: Kumiko YAMAZAKI, Takeshi SHIBAHARA, Junichi YAMAZAKI
  • Publication number: 20210238037
    Abstract: A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a<3.00 is satisfied.
    Type: Application
    Filed: August 27, 2019
    Publication date: August 5, 2021
    Applicant: TDK CORPORATION
    Inventors: Kumiko YAMAZAKI, Wakiko SATO, Junichi YAMAZAKI
  • Patent number: 11078123
    Abstract: A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+?BOx+?Ny wherein ? is larger than zero and 0.300 or less, x+? is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: August 3, 2021
    Assignee: TDK CORPORATION
    Inventors: Kumiko Yamazaki, Yuki Nagamine, Takeshi Shibahara, Yuji Umeda, Junichi Yamazaki
  • Patent number: 10893384
    Abstract: An exemplary geolocation data management system identifies a passive monitoring pattern for tracking a geolocation of a mobile device and tracks the geolocation of the mobile device as the mobile device traverses a path during a time period. The system tracks the geolocation by determining geolocations in accordance with the identified passive monitoring pattern and by generating corresponding geolocation records for the mobile device. Based on a contiguous subset of these geolocation records, the system determines that the mobile device dwelled at a particular geolocation for a time interval and generates a dwell record for the mobile device. The system further presents, by way of a user interface, a map indicating the path traversed by the mobile device during the time period. The map shows a geolocation record and the dwell record to be visually differentiable from one another. Corresponding methods and systems are also disclosed.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: January 12, 2021
    Assignee: Verizon Patent and Licensing Inc.
    Inventors: Kumiko Yamazaki, Florin Alexandrescu, Michael Wille, Chad Francis
  • Patent number: 10707018
    Abstract: A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: July 7, 2020
    Assignee: TDK CORPORATION
    Inventors: Kumiko Yamazaki, Hiroshi Chihara, Yuki Nagamine, Junichi Yamazaki, Yuji Umeda
  • Patent number: 10696598
    Abstract: To provide a dielectric porcelain composition and an electronic component that demonstrate ferroelectricity. A dielectric porcelain composition that is characterized by having a perovskite-type oxynitride as a principal component and by including a polycrystalline body that demonstrates ferroelectricity.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: June 30, 2020
    Assignees: TDK CORPORATION, NATIONAL UNIVERSITY CORPORATION HOLLAIDO UNIVERSITY
    Inventors: Kumiko Yamazaki, Yuki Nagamine, Takeshi Shibahara, Shinichi Kikkawa, Yuji Masubuchi
  • Patent number: 10611693
    Abstract: A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan ?. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n?0.7.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: April 7, 2020
    Assignee: TDK CORPORATION
    Inventors: Kumiko Yamazaki, Hiroshi Chihara, Yuki Nagamine, Junichi Yamazaki
  • Publication number: 20200053511
    Abstract: An exemplary geolocation data management system identifies a passive monitoring pattern for tracking a geolocation of a mobile device and tracks the geolocation of the mobile device as the mobile device traverses a path during a time period. The system tracks the geolocation by determining geolocations in accordance with the identified passive monitoring pattern and by generating corresponding geolocation records for the mobile device. Based on a contiguous subset of these geolocation records, the system determines that the mobile device dwelled at a particular geolocation for a time interval and generates a dwell record for the mobile device. The system further presents, by way of a user interface, a map indicating the path traversed by the mobile device during the time period. The map shows a geolocation record and the dwell record to be visually differentiable from one another. Corresponding methods and systems are also disclosed.
    Type: Application
    Filed: August 8, 2018
    Publication date: February 13, 2020
    Inventors: Kumiko Yamazaki, Florin Alexandrescu, Michael Wille, Chad Francis
  • Patent number: 10522288
    Abstract: A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)1-xM(2)x)(M(3)1-yM(4)y)(O1-zNz)3. 0?x?1, 0?y?1, and 0<z<? are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4a site atoms, and four 8h site atoms. The center atom is M(3) or M(4). The 4a site atom is O atom or N atom. The 8h site atom is O atom or N atom. An angle ? formed between a straight line connecting two 4a site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.5°???12°.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: December 31, 2019
    Assignee: TDK CORPORATION
    Inventors: Yuji Umeda, Kumiko Yamazaki
  • Patent number: 10479732
    Abstract: A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein “A” is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, “B” is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: November 19, 2019
    Assignee: TDK CORPORATION
    Inventors: Takeshi Shibahara, Yuki Nagamine, Kumiko Yamazaki
  • Patent number: 10475586
    Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: November 12, 2019
    Assignee: TDK CORPORATION
    Inventors: Takeshi Shibahara, Yuki Nagamine, Yoshitomo Tanaka, Kumiko Yamazaki
  • Publication number: 20190202744
    Abstract: To provide a dielectric porcelain composition and an electronic component that demonstrate ferroelectricity. A dielectric porcelain composition that is characterized by having a perovskite-type oxynitride as a principal component and by including a polycrystalline body that demonstrates ferroelectricity.
    Type: Application
    Filed: February 1, 2017
    Publication date: July 4, 2019
    Applicants: TDK CORPORATION, NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
    Inventors: Kumiko YAMAZAKI, Yuki NAGAMINE, Takeshi SHIBAHARA, Shinichi KIKKAWA, Yuji MASUBUCHI
  • Patent number: 10329200
    Abstract: A dielectric thin film with high relative permittivity and high insulation can establish the amount of nitrogen in a metal oxynitride to be low. A dielectric thin film, wherein the dielectric composition is a metal oxynitride solid solution including Ma and Mb: a composition represented by the chemical formula MazMbOxNy (Ma is one element selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, Mb is one element selected from Ta, Nb, Ti and W, O is oxygen, and N is nitrogen); when a is the ionic valence exhibited when Ma occupies an A site in the perovskite structure and b is the ionic valence exhibited when Mb occupies a B site in the perovskite structure, a and b are 6.7?a+b?7.3, and x, y and z are 0.8?z?1.2, 2.450?x?3.493, and 0.005?y?0.700.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: June 25, 2019
    Assignee: TDK CORPORATION
    Inventors: Kumiko Yamazaki, Isao Nakahata
  • Publication number: 20190144341
    Abstract: A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+?BOx+?Ny wherein ? is larger than zero and 0.300 or less, x+? is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.
    Type: Application
    Filed: November 9, 2018
    Publication date: May 16, 2019
    Applicant: TDK CORPORATION
    Inventors: Kumiko YAMAZAKI, Yuki NAGAMINE, Takeshi SHIBAHARA, Yuji UMEDA, Junichi YAMAZAKI
  • Publication number: 20190023616
    Abstract: A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan ?. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n?0.7.
    Type: Application
    Filed: February 1, 2017
    Publication date: January 24, 2019
    Applicant: TDK CORPORATION
    Inventors: Kumiko YAMAZAKI, Hiroshi CHIHARA, Yuki NAGAMINE, Junichi YAMAZAKI
  • Publication number: 20190019622
    Abstract: A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
    Type: Application
    Filed: February 1, 2017
    Publication date: January 17, 2019
    Applicant: TDK CORPORATION
    Inventors: Kumiko YAMAZAKI, Hiroshi CHIHARA, Yuki NAGAMINE, Junichi YAMAZAKI, Yuji UMEDA