Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, a method includes providing a semiconductor substrate, defining a length on the semiconductor substrate corresponding to opposing vertices of a nanowire, removing a portion of the semiconductor substrate to provide a first fin structure and a second fin structure, etching a first cavity proximate to the first side, depositing a protective layer in the first cavity, removing a portion of the protective layer to expose a portion of the semiconductor substrate, and etching a second cavity at the exposed semiconductor substrate where the first and second cavities communicate. The first and second fin structures are adjacent where the length of the first fin structure corresponds to the opposing vertices and has a first side and a second side.

Abstract: A cartridge for carrying glass substrate is provided, and the cartridge comprises a pair of side beams each is provided with at least two pillars along a first direction. Each of the pillars is configured with a plurality of fixtures detachably juxtaposed vertically. A plurality of supporting units is arranged between the fixtures of the side beams so as to define a plurality of supporting surfaces vertically. And a plurality of free locking units detachably are secured to the fixtures on the common surface so as to allow the moving of the fixtures on the common surface as a whole. With the provision of the cartridge of the present invention, the damaged glass substrate can be conveniently and effectively removed without tempering other glass substrates which are intact and undamaged.

Abstract: A manufacturing process of an etch stop layer is provided. The manufacturing process includes steps of providing a substrate; forming a gate stack structure over the substrate, wherein the gate stack structure at least comprises a dummy polysilicon layer and a barrier layer; removing the dummy polysilicon layer to define a trench and expose a surface of the barrier layer; forming a repair layer on the surface of the barrier layer and an inner wall of the trench; and forming an etch stop layer on the repair layer. In addition, a manufacturing process of the gate stack structure with the etch stop layer further includes of forming an N-type work function metal layer on the etch stop layer within the trench, and forming a gate layer on the N-type work function metal layer within the trench.

Abstract: Provided is a semiconductor device including a substrate, a gate structure, a second dielectric layer and a source/drain region. A first dielectric layer is disposed on the substrate, and the first dielectric layer has a trench therein. The gate structure is disposed on the substrate in the trench and includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench, and includes a TiAl3 phase metal layer. A height of the work function metal layer disposed on a sidewall of the trench is lower than a height of a top surface of the first dielectric layer. The metal layer fills the trench. The second dielectric layer is disposed between the gate structure and the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure.

Abstract: A manufacturing process of an etch stop layer is provided. The manufacturing process includes steps of providing a substrate; forming a gate stack structure over the substrate, wherein the gate stack structure at least comprises a dummy polysilicon layer and a barrier layer; removing the dummy polysilicon layer to define a trench and expose a surface of the barrier layer; forming a repair layer on the surface of the barrier layer and an inner wall of the trench; and forming an etch stop layer on the repair layer. In addition, a manufacturing process of the gate stack structure with the etch stop layer further includes of forming an N-type work function metal layer on the etch stop layer within the trench, and forming a gate layer on the N-type work function metal layer within the trench.

Abstract: The present invention provides a device of replacing and charging battery at environment monitoring terminal and battery replacement system. Through the battery positioning mechanism disposed at both battery charging device and environment monitoring terminal, and anodes and cathodes disposed for contacting the battery electrodes, the battery replacement device can replace the full-discharged battery at environment monitoring terminal and a full-charged battery at the battery charging device. In this manner, the system can automatically replace the battery at environment monitoring terminal without manual replacement so as to reduce battery replacement time.

Abstract: Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench isolation is then formed with a core overlying the barrier layer, where the core includes a shallow trench isolation insulator.

Abstract: A semiconductor structure includes a substrate, a dielectric layer and a fluoride metal layer. The dielectric layer is located on the substrate. The fluoride metal layer is located on the dielectric layer. Furthermore, the present invention also provides a semiconductor process to form said semiconductor structure.

Abstract: The present invention provides an environmental monitoring system and method for a liquid crystal manufacturing apparatus. The monitoring system comprises an environmental information acquiring equipment, a server, and the liquid crystal manufacturing apparatus. The environmental information acquiring equipment moves along a predetermined track inside the liquid crystal manufacturing apparatus. The environmental information acquiring equipment acquires inner environmental information of the liquid crystal manufacturing apparatus during its movement and transmits the environmental information to the server. The server generates a monitoring report and provides it to detecting personnel. The present invention can solve the problems of high cost, low efficiency, and unable to accurately measure inner environmental information of the liquid crystal manufacturing apparatus in conventional skills.

Abstract: The present invention provides a scroll wheel for transferring a glass substrate, which comprises a rolling body and a surrounding member. The rolling body has an outward-curving peripheral surface, and an outermost circumference on the surface of the rolling body has an groove disposed around. The rolling body rotates on a central axis. The surrounding member is engaged with the groove of the rolling body. The surrounding member is in contact with the glass substrate and is used to support and transfer the glass substrate. The present invention can prevent the glass substrate from being scratched in the transferring process and reduce the damage of the glass substrate. Moreover, the present invention can make the best use of an element of the scroll wheel that is reusable and reduce the cost.

Abstract: The present invention discloses a suspended ceiling filtration apparatus, which includes filtration units. The filtration unit includes a filtration part, two horizontal strip support legs and two longitudinal strip support legs. A support plate protrudes from the support legs. The filtration part is placed on the support plate, and a buffer filling part is disposed between the filtration part and the support plate. The buffer filling part is utilized to self-adaptively swell and shrink relative to the support plate according to a weight of the supported filtration part, the buffer filling part fills a gap between the support plate and the filtration part.

Abstract: Glycosphingolipids (GSLs) bearing ?-glucose (?-Glc) that preferentially stimulate human invariant NKT (iNKT) cells are provided. GSLs with ?-glucose (?-Glc) that exhibit stronger induction in humans (but weaker in mice) of cytokines and chemokines and expansion and/or activation of immune cells than those with ?-galactose (?-Gal) are disclosed. GSLs bearing ?-glucose (?-Glc) and derivatives of ?-Glc with F at the 4 and/or 6 positions are provided. Methods for iNKT-independent induction of chemokines by the GSL with ?-Glc and derivatives thereof are disclosed. Methods for immune stimulation in humans using GSLs with ?-Glc and derivatives thereof are provided.

Abstract: The present invention relates to a substrate transfer system, comprising a number of roller assemblies used for mobile transfer of the glass substrate on it, and a controller used for controlling rotation of the roller assemblies; the substrate transfer system further comprises a substrate positioning device, which is arranged at the end of the transfer direction of the glass substrate by the roller assemblies; the substrate positioning device comprises a positioning pole, which is used for blocking and positioning the glass substrate transferred by the roller assemblies; and a buffer positioning mechanism on which the positioning pole is mounted on, providing mobile buffer for the positioning pole and driving the positioning pole to reset. A buffer reset mechanism is arranged for controlling the position of the positioning pole, and the positioning deviation of the substrate can be further eliminated; it can provide buffer contact for eliminating the risk of fragmentation.

Abstract: The present invention discloses a suspended ceiling filtration apparatus, which includes filtration units. The filtration unit includes a filtration part, two horizontal strip support legs and two longitudinal strip support legs. A support plate protrudes from the support legs. The filtration part is placed on the support plate, and a buffer filling part is disposed between the filtration part and the support plate. The buffer filling part is utilized to self-adaptively swell and shrink relative to the support plate according to a weight of the supported filtration part, the buffer filling part fills a gap between the support plate and the filtration part.

Abstract: A system and method for controlling transportation of a substrate of a liquid crystal panel is disclosed. Said method comprises: putting the substrate of the liquid crystal panel into a transport apparatus; humidifying the transport apparatus having the substrate of the liquid crystal panel placed thereinto by utilizing a humidifying apparatus to form a mist in the transport apparatus; and transporting the substrate of the liquid crystal panel by utilizing the humidified transport apparatus. The present invention prevents the substrate of the liquid crystal panel from being damaged by electrostatic charges and ensures product percent of pass.

Abstract: Provided is a semiconductor device including a substrate, a gate structure, a second dielectric layer and a source/drain region. A first dielectric layer is disposed on the substrate, and the first dielectric layer has a trench therein. The gate structure is disposed on the substrate in the trench and includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench, and includes a TiAl3 phase metal layer. A height of the work function metal layer disposed on a sidewall of the trench is lower than a height of a top surface of the first dielectric layer. The metal layer fills the trench. The second dielectric layer is disposed between the gate structure and the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure.

Abstract: A transporting device for transporting substrate of liquid crystal display and using method thereof are provided. The transporting device comprises a fixing arm, at least two forks mounted on the fixing arm, laser emitting devices respectively mounted on the forks that are used to carry two ends of the substrate, laser sensors mounted on the fixing arm and corresponding to the laser emitting devices, a processor mounted on the fixing arm and connected to the laser sensors, and air damping devices mounted below the forks that are used to carry two ends of the substrate. The droop amount and the vibration of the fork can be measured when the transporting device is carrying a substrate, and it can be determined whether the droop amount and the vibration are abnormal. If they are abnormal, the laser emitting device will be started up to alleviate the vibration of the fork.

Abstract: In a silicon-controlled-rectifier (SCR) with adjustable holding voltage, an epitaxial layer is formed on a heavily doped semiconductor layer. A first N-well having a first P-heavily doped area is formed in the epitaxial layer. A first P-well is formed in the epitaxial layer. Besides, a first N-heavily doped area is formed in the first P-well. At least one deep isolation trench is formed in the epitaxial layer, having a depth greater than the depth of the first N-type well and located between the first P-heavily doped area and the first N-heavily doped area. A distance between the deep isolation trench and the heavily doped semiconductor layer is larger than zero.

Abstract: A method of fabricating a semiconductor device includes following steps. A substrate is provided, wherein a first dielectric layer having a trench therein is formed on the substrate, a source/drain region is formed in the substrate at two sides of the trench, and a second dielectric layer is formed on the substrate in the trench. A first physical vapor deposition process is performed to form a Ti-containing metal layer in the trench. A second physical vapor deposition process is performed to form an Al layer on the Ti-containing metal layer in the trench. A thermal process is performed to anneal the Ti-containing metal layer and the Al layer so as to form a work function metal layer. A metal layer is formed to fill the trench.

Abstract: A semiconductor device for electrostatic discharge (ESD) protection includes a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a second well formed in the substrate, a first p-type region formed in the first well to serve as an anode, and a first n-type region partially formed in the second well to serve as a cathode, a p-type metal-oxide-semiconductor (PMOS) transistor formed in the first well including a gate, a first diffused region and a second diffused region separated apart from the first diffused region, a second n-type region formed in the first well electrically connected to the first diffused region of the PMOS transistor, and a second p-type region formed in the substrate electrically connected to the second diffused region of the PMOS transistor.