Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation. The bottom surface of the second portion of the conductive plug is covered by the isolation.

Abstract: The present invention provides a high-voltage metal-oxide-semiconductor (HVMOS) transistor comprising a substrate, a gate dielectric layer, a gate electrode and a source and drain region. The gate dielectric layer is disposed on the substrate and includes a protruded portion and a recessed portion, wherein the protruded portion is disposed adjacent to two sides of the recessed portion and has a thickness greater than a thickness of the recessed portion. The gate electrode is disposed on the gate dielectric layer. Thus, the protruded portion of the gate dielectric layer can maintain a higher breakdown voltage, thereby keeping the current from leaking through the gate.

Abstract: The present invention provides a high-voltage metal-oxide-semiconductor (HVMOS) transistor comprising a substrate, a gate dielectric layer, a gate electrode and a source and drain region. The gate dielectric layer is disposed on the substrate and includes a protruded portion and a recessed portion, wherein the protruded portion is disposed adjacent to two sides of the recessed portion and has a thickness greater than a thickness of the recessed portion. The gate electrode is disposed on the gate dielectric layer. Thus, the protruded portion of the gate dielectric layer can maintain a higher breakdown voltage, thereby keeping the current from leaking through the gate.

Abstract: A LDMOS structure including a semiconductor substrate, a drain region, a lightly doped drain (LDD) region, a source region and a gate structure is provided. The substrate has a trench. The drain region is formed in the semiconductor substrate under the trench. A LDD region is formed in the semiconductor substrate at a sidewall of the trench. The source region is formed in the semiconductor substrate. The gate structure is formed on a surface of the semiconductor substrate above the LDD region between the drain region and the source region. A method for manufacturing the LDMOS structure is also provided.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well and a second well respectively having the first and second conductive types formed in the deep well, and extending down from the surface of the substrate; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion comprising at least two fingers penetrating into the isolation, and the fingers spaced apart and electrically connected to each other.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well and a second well respectively having the first and second conductive types formed in the deep well, and extending down from the surface of the substrate; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion comprising at least two fingers penetrating into the isolation, and the fingers spaced apart and electrically connected to each other.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation. The bottom surface of the second portion of the conductive plug is covered by the isolation.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.

Abstract: A MOS transistor is described, including: a source region and a drain region in a semiconductor substrate, an isolation between the source region and the drain region, a first gate conductor between the source region and the isolation, at least one conductive plug electrically connected to the first gate conductor and penetrating into the isolation, and at least one second gate conductor on the isolation, which is electrically connected to the first gate conductor and the at least one conductive plug. One of the at least one conductive plug is between the first gate conductor and the at least one second gate conductor.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a dielectric structure and an electrode structure. The dielectric layer is on an upper substrate surface of the semiconductor substrate. The dielectric structure and the semiconductor substrate have opposing first and second interfaces therebetween. The electrode structure comprises an electrode truck portion and at least one electrode branch portion. The at least one electrode branch portion is extended from the electrode truck portion down into the dielectric structure. The at least one electrode branch portion and the first interface have the smallest gap distance substantially bigger than 300 ? therebetween.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a dielectric structure and an electrode structure. The dielectric layer is on an upper substrate surface of the semiconductor substrate. The dielectric structure and the semiconductor substrate have opposing first and second interfaces therebetween. The electrode structure comprises an electrode truck portion and at least one electrode branch portion. The at least one electrode branch portion is extended from the electrode truck portion down into the dielectric structure. The at least one electrode branch portion and the first interface have the smallest gap distance substantially bigger than 300 ? therebetween.

Abstract: A MOS transistor is described, including: a source region and a drain region in a semiconductor substrate, an isolation between the source region and the drain region, a first gate conductor between the source region and the isolation, at least one conductive plug electrically connected to the first gate conductor and penetrating into the isolation, and at least one second gate conductor on the isolation, which is electrically connected to the first gate conductor and the at least one conductive plug. One of the at least one conductive plug is between the first gate conductor and the at least one second gate conductor.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.