Patents by Inventor Kunihiro Tada
Kunihiro Tada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10815567Abstract: A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.Type: GrantFiled: September 18, 2015Date of Patent: October 27, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Katsuhito Hirose, Kunihiro Tada, Kenji Suzuki, Takeshi Shinohara
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Publication number: 20170314130Abstract: A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.Type: ApplicationFiled: September 18, 2015Publication date: November 2, 2017Inventors: Katsuhito HIROSE, Kunihiro TADA, Kenji SUZUKI, Takeshi SHINOHARA
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Patent number: 8785310Abstract: A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.Type: GrantFiled: March 22, 2012Date of Patent: July 22, 2014Assignee: Tokyo Electron LimitedInventors: Toshio Hasegawa, Kunihiro Tada, Hideaki Yamasaki, David L. O'Meara, Gerrit J. Leusink
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Publication number: 20130196505Abstract: A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.Type: ApplicationFiled: March 22, 2012Publication date: August 1, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Toshio Hasegawa, Kunihiro Tada, Hideaki Yamasaki, David L. O'Meara, Gerrit J. Leusink
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Patent number: 8257790Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.Type: GrantFiled: February 21, 2007Date of Patent: September 4, 2012Assignee: Tokyo Electron LimitedInventors: Kensaku Narushima, Satoshi Wakabayashi, Kunihiro Tada
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Patent number: 8124168Abstract: Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.Type: GrantFiled: April 4, 2006Date of Patent: February 28, 2012Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Hiroyuki Miyashita, Isao Gunji
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Patent number: 8106335Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).Type: GrantFiled: July 1, 2005Date of Patent: January 31, 2012Assignee: Tokyo Electron LimitedInventors: Seishi Murakami, Kunihiro Tada
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Publication number: 20100240216Abstract: A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.Type: ApplicationFiled: May 28, 2010Publication date: September 23, 2010Inventors: Kunihiro TADA, Hiroaki Yokoi, Satoshi Wakabayashi, Kensaku Narushima
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Publication number: 20100227062Abstract: A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.Type: ApplicationFiled: February 21, 2007Publication date: September 9, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Kensaku Narushima, Satoshi Wakabayashi, Kunihiro Tada
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Publication number: 20100216304Abstract: A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.Type: ApplicationFiled: May 4, 2010Publication date: August 26, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Kunihiro Tada, Kensaku Narushima, Satoshi Wakabayashi
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Patent number: 7737005Abstract: A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.Type: GrantFiled: April 8, 2005Date of Patent: June 15, 2010Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Kensaku Narushima, Satoshi Wakabayashi
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Publication number: 20090071404Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invention. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: ApplicationFiled: October 30, 2008Publication date: March 19, 2009Inventors: Kunihiro Tada, Hayashi Otsuki
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Patent number: 7484513Abstract: A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.Type: GrantFiled: January 5, 2005Date of Patent: February 3, 2009Assignee: Tokyo Electron LimitedInventors: Kunihiro Tada, Hayashi Otsuki
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Publication number: 20080302781Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).Type: ApplicationFiled: July 1, 2005Publication date: December 11, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Seishi Murakami, Kunihiro Tada
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Publication number: 20080057344Abstract: Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.Type: ApplicationFiled: December 27, 2004Publication date: March 6, 2008Inventors: Seishi Murakami, Kunihiro Tada
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Publication number: 20070292598Abstract: Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.Type: ApplicationFiled: April 4, 2006Publication date: December 20, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Kunihiro Tada, Hiroyuki Miyashita, Isao Gunji
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Publication number: 20070257372Abstract: A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.Type: ApplicationFiled: April 8, 2005Publication date: November 8, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Kunihiro Tada, Kensaku Narushima, Satoshi Wakabayashi
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Publication number: 20070131168Abstract: The invention relates to a gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate. The gas supplying unit includes a plurality of nickel members. A large number of gas-supplying holes is formed at a lower surface of the gas supplying unit, a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.Type: ApplicationFiled: October 27, 2006Publication date: June 14, 2007Inventors: Hisashi Gomi, Tetsuya Saito, Takashi Kakegawa, Takahisa Mase, Makoto Koizumi, Kunihiro Tada, Satoshi Wakabayashi, Kensaku Narushima, Fang Cheng
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Patent number: 7153773Abstract: A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.Type: GrantFiled: June 17, 2004Date of Patent: December 26, 2006Assignee: Tokyo Electron LimitedInventors: Hayashi Otsuki, Kunihiro Tada, Kimihiro Matsuse
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Publication number: 20060231032Abstract: The object of the present invention is to provide a plasma chemical vapor deposition method and apparatus capable of preventing local electric discharge at the peripheral portion of the susceptor. Prior to the film formation, a gas is supplied into an evacuated chamber, and a substrate is supported on substrate support pins, which is arranged in the susceptor and are in their elevated position, so that the substrate is preheated; thereafter the supply of the gas is stopped, the chamber is evacuated, and the substrate support pins are lowered so that the substrate is placed on the susceptor; and thereafter a gas is supplied into the chamber and the substrate is further preheated. Thereafter, plasma is generated in the chamber, and the film-forming gas is supplied into the chamber, to form a film on the substrate.Type: ApplicationFiled: December 29, 2005Publication date: October 19, 2006Inventors: Seishi Murakami, Kunihiro Tada