Abstract: A clutch unit (100) includes an operation lever (21), an operation member (22), an input-side clutch (50), an output-side clutch (60), and a bottomed cylindrical housing (11). The input-side clutch (50) includes an input-side inner ring member (51) and an operation bracket (54). The operation bracket (54) includes an engagement portion (54b) that engages with the input-side inner ring member (51), a facing portion (54d) that faces the bottom surface (11 a) of the housing (11) with a gap therebetween, a fastened portion (54c) that penetrates a through hole (11h) formed in the bottom surface (11a) of the housing (11) and is fastened to the operation member (22), and a sliding-contact portion (54e) that extends from the facing portion (54d) toward the bottom surface (11a) of the housing (11) and comes into sliding-contact with the bottom surface of the housing (11).

Abstract: An in-vehicle control device includes a vehicle-side communication unit installed on a vehicle and communicating with at least an information processing device external to the vehicle, and a first processor. The first processor is configured to: receive an installation request for an application program from the information processing device; in a case in which the installation request has been received, notify the information processing device of a rule defining whether or not a communication frame received at the vehicle-side communication unit is unauthorized and of equipment information related to optional equipment of the vehicle; acquire the application program and a rule that has been updated based on the notified rule and the equipment information from the information processing device; and, in a case in which the updated rule has been acquired, update the rule to the updated rule.

Abstract: A radio-frequency signal transmitting and receiving circuit includes a power amplifier, a transmission band pass filter configured to transmit a radio-frequency input signal, a first reception band pass filter configured to transmit a first radio-frequency reception signal, a first low-noise amplifier configured to amplify the first radio-frequency reception signal and output a first radio-frequency output signal, a first transmitting and receiving filter having a first end and a second end, the first end being electrically connected to a first antenna terminal, and a switch configured to electrically connect the transmission band pass filter to the second end of the first transmitting and receiving filter to output the radio-frequency input signal to the first antenna terminal and electrically connect the second end of the first transmitting and receiving filter to the first reception band pass filter to receive the first radio-frequency reception signal from the first antenna terminal.

Abstract: A multilayer substrate includes a via electrode defining and functioning as an end portion on ground terminals side of a first inductor connected to a shield electrode, the end portion on a signal line side is adjacent to or in a vicinity of a first principal surface than the end portion on the ground terminals side is in the lamination direction of base material layers, a via electrode defining and functioning as the end portion on the ground terminals side of a second inductor is connected to the shield electrode, and the end portion on the signal line side is adjacent to or in a vicinity of the first principal surface than the end portion on the ground terminals side is in the lamination direction of the base material layers.

Abstract: A radio-frequency signal transmitting and receiving circuit includes a power amplifier, a transmission band pass filter configured to transmit a radio-frequency input signal, a first reception band pass filter configured to transmit a first radio-frequency reception signal, a first low-noise amplifier configured to amplify the first radio-frequency reception signal and output a first radio-frequency output signal, a first transmitting and receiving filter having a first end and a second end, the first end being electrically connected to a first antenna terminal, and a switch configured to electrically connect the transmission band pass filter to the second end of the first transmitting and receiving filter to output the radio-frequency input signal to the first antenna terminal and electrically connect the second end of the first transmitting and receiving filter to the first reception band pass filter to receive the first radio-frequency reception signal from the first antenna terminal.

Abstract: An electronic component includes a multilayer body and a first resonator. The multilayer body includes insulating layers stacked on each other in a stacking direction. The first resonator includes a first inductor and a first capacitor disposed in the multilayer body. The first inductor is defined by a conductive layer disposed on an insulating layer of the plurality of insulating layers and an interlayer connecting conductor which passes through an insulating layer of the plurality of insulating layers in the stacking direction connected to each other so that the first inductor preferably has a helical or substantially helical shape as viewed from a first direction perpendicular or substantially perpendicular to the stacking direction. A certain portion of the first inductor is located on a predetermined plane perpendicular or substantially perpendicular to the first direction, and a remaining portion of the first inductor is displaced from the predetermined plane in the first direction.

Abstract: A number of micro-sized rectangular dot-like n-type semiconductor regions 121 are created in a p-type semiconductor region which is a base body 11. Contact parts 14, each of which is in contact with one n-type semiconductor region 121 and almost entirely covers the same region, are mutually connected by a wire part 15 as a common cathode terminal. The n-type semiconductor regions 121 receives no light; their function is to collect carriers generated within and outside the surrounding depletion layers. Appropriate setting of the spacing of the n-type semiconductor regions 121 enables efficient collection of the carriers generated in the p-type semiconductor region while improving the SN ratio of the photo-detection signal by a noise-reduction effect due to a decrease in the p-n junction capacitance. Carriers originating from light of shorter wavelengths are barely reflected in the photo-detection signal. Thus, unfavorable influences of the shorter wavelengths of light are eliminated.

Abstract: An electronic component includes first through n-th inductors that turn around as viewed from a first direction perpendicular or substantially perpendicular to a stacking direction of a multilayer body of the electronic component. An (n+1)-th inductor includes a linear (n+1)-th inductor conductive layer which is provided in a configuration in which it turns around, as viewed from the stacking direction, and which is located within a region surrounded by the first inductor, as viewed from the first direction. An (n+1)-th capacitor is electrically connected to a first outer electrode, and includes an (n+1)-th capacitor conductive layer which opposes a first inductor conductive layer defining the first inductor with an insulating layer of a plurality of insulating layers of the multilayer body interposed therebetween.

Abstract: A number of micro-sized rectangular dot-like n-type semiconductor regions 121 are created in a p-type semiconductor region which is a base body 11. Contact parts 14, each of which is in contact with one n-type semiconductor region 121 and almost entirely covers the same region, are mutually connected by a wire part 15 as a common cathode terminal. The n-type semiconductor regions 121 receives no light; their function is to collect carriers generated within and outside the surrounding depletion layers. Appropriate setting of the spacing of the n-type semiconductor regions 121 enables efficient collection of the carriers generated in the p-type semiconductor region while improving the SN ratio of the photo-detection signal by a noise-reduction effect due to a decrease in the p-n junction capacitance. Carriers originating from light of shorter wavelengths are barely reflected in the photo-detection signal. Thus, unfavorable influences of the shorter wavelengths of light are eliminated.

Abstract: Provided is a gear grinding machine which can dress a grinding stone while a gear is held attached to the machine regardless of the size of the gear. To this end, the gear grinding machine (1) engages and mutually rotates a work (W) and the grinding stone (17) to thereby grind the work (W), wherein the gear grinding machine is equipped with a turning table (22) which holds the work (W) and rotates around a work rotating shaft (C), and a pivot table (31) which is pivotably supported around the work rotating shaft (C); and a dresser (40) which is capable of dressing the grinding stone (17) is provided on the pivot table (31), the pivot table (31) being pivoted to move the dresser (40) between a dressing position (D1) and a retreat position (D2).

Abstract: An electronic component includes first through n-th inductors that turn around as viewed from a first direction perpendicular or substantially perpendicular to a stacking direction of a multilayer body of the electronic component. An (n+1)-th inductor includes a linear (n+1)-th inductor conductive layer which is provided in a configuration in which it turns around, as viewed from the stacking direction, and which is located within a region surrounded by the first inductor, as viewed from the first direction. An (n+1)-th capacitor is electrically connected to a first outer electrode, and includes an (n+1)-th capacitor conductive layer which opposes a first inductor conductive layer defining the first inductor with an insulating layer of a plurality of insulating layers of the multilayer body interposed therebetween.

Abstract: A high frequency component includes a multilayer body including a plurality of insulating layers stacked in a stacking direction, linear conductors extending along the insulating layers, interlayer connection conductors extending through at least one of the insulating layers, and planar conductors extending along the insulating layers. The high frequency component further includes transverse coils and internal capacitors. Each of the transverse coils includes the linear conductors and the interlayer connection conductors spirally wound in a plane in a plurality of turns around a winding axis extending in a direction perpendicular or substantially perpendicular to the stacking direction. Each of the internal capacitors includes the planar conductors being opposed to each other such that at least one of the insulating layers is disposed therebetween, the internal capacitor being arranged within a coil opening of the transverse coil when viewed along the winding axis of the transverse coil.

Abstract: An electronic component includes a multilayer body and a first resonator. The multilayer body includes insulating layers stacked on each other in a stacking direction. The first resonator includes a first inductor and a first capacitor disposed in the multilayer body. The first inductor is defined by a conductive layer disposed on an insulating layer of the plurality of insulating layers and an interlayer connecting conductor which passes through an insulating layer of the plurality of insulating layers in the stacking direction connected to each other so that the first inductor preferably has a helical or substantially helical shape as viewed from a first direction perpendicular or substantially perpendicular to the stacking direction. A certain portion of the first inductor is located on a predetermined plane perpendicular or substantially perpendicular to the first direction, and a remaining portion of the first inductor is displaced from the predetermined plane in the first direction.

Abstract: A high frequency component includes a multilayer body including a plurality of insulating layers stacked in a stacking direction, linear conductors extending along the insulating layers, interlayer connection conductors extending through at least one of the insulating layers, and planar conductors extending along the insulating layers. The high frequency component further includes transverse coils and internal capacitors. Each of the transverse coils includes the linear conductors and the interlayer connection conductors spirally wound in a plane in a plurality of turns around a winding axis extending in a direction perpendicular or substantially perpendicular to the stacking direction. Each of the internal capacitors includes the planar conductors being opposed to each other such that at least one of the insulating layers is disposed therebetween, the internal capacitor being arranged within a coil opening of the transverse coil when viewed along the winding axis of the transverse coil.

Abstract: Provided is a gear grinding machine which can dress a grinding stone while a gear is held attached to the machine regardless of the size of the gear. To this end, the gear grinding machine (1) engages and mutually rotates a work (W) and the grinding stone (17) to thereby grind the work (W), wherein the gear grinding machine is equipped with a turning table (22) which holds the work (W) and rotates around a work rotating shaft (C), and a pivot table (31) which is pivotably supported around the work rotating shaft (C); and a dresser (40) which is capable of dressing the grinding stone (17) is provided on the pivot table (31), the pivot table (31) being pivoted to move the dresser (40) between a dressing position (D1) and a retreat position (D2).

Abstract: A high-frequency switch module includes a FET switch mounted on a multilayer substrate and a low pass filter arranged between the FET switch and a transmission signal input terminal. The low pass filter includes at least one inductor connected in series between a transmission input port and the transmission signal input terminal, a first capacitor, one end of which is connected to the transmission input port and the other end of which is grounded, and a second capacitor, one end of which is connected to the transmission signal input terminal and the other end of which is grounded, and the first capacitor and the second capacitor have different capacitance values.

Abstract: A high-frequency switch module includes a FET switch mounted on a multilayer substrate and a low pass filter arranged between the FET switch and a transmission signal input terminal. The low pass filter includes at least one inductor connected in series between a transmission input port and the transmission signal input terminal, a first capacitor, one end of which is connected to the transmission input port and the other end of which is grounded, and a second capacitor, one end of which is connected to the transmission signal input terminal and the other end of which is grounded, and the first capacitor and the second capacitor have different capacitance values.

Abstract: In a high-frequency module, an antenna device is disposed on a first principal surface of a second substrate, a first principal surface of a first substrate and a second principal surface of the second substrate face each other and are connected to each other by conductive connecting members, electronic components including an IC chip are mounted on the first principal surface of the first substrate, ground electrodes are disposed on the first and second substrates, the conductive connecting members are connected to a ground potential, and thus the IC chip is surrounded by the ground electrodes of the first and second substrates and the conductive connecting members.

Abstract: In a high-frequency module, an antenna device is disposed on a first principal surface of a second substrate, a first principal surface of a first substrate and a second principal surface of the second substrate face each other and are connected to each other by conductive connecting members, electronic components including an IC chip are mounted on the first principal surface of the first substrate, ground electrodes are disposed on the first and second substrates, the conductive connecting members are connected to a ground potential, and thus the IC chip is surrounded by the ground electrodes of the first and second substrates and the conductive connecting members.

Abstract: In a solid state imaging apparatus of the present invention, first and second charge-coupled devices (CCDs) 336A and 336B are prepared as two charge accumulation circuits for one photodiode 330. The first and second CCDs 336A and 336B additionally accumulate charges during an on-state and an off-state of a light emitting source in the imaging apparatus, respectively. After the additional charge accumulation, the additionally accumulated charges in the first and second CCDs 336A and 336B are fed to first and second charge transfer CCD registers 333A and 333B, respectively. The charges in the first and second charge transfer CCD registers 333A and 333B are shifted in sequence to thereby output first and second charge signals, respectively. A differential amplifier 334 of the imaging apparatus calculates and outputs a differential signal between the first charge signal and the charge second signal. By using the imaging apparatus of the present invention, the effect, e.g.