Patents by Inventor Kunio Miyata

Kunio Miyata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10670453
    Abstract: A sensor unit capable of protecting a piezoelectric element and detecting vibration and sound is provided. The sensor unit comprises a sheet-like piezoelectric element having a porous layer, and a sound propagation sheet covering at least one face of the piezoelectric element and permitting transmission of sound from a first face toward a second face of the sound propagation sheet. A difference in acoustic pressure level between the sound incident on the sound propagation sheet and the transmitted sound is preferably no greater than 10 dB. A surface density of the sound propagation sheet is preferably from 0.03 g/m2 to 100 g/m2. The sound propagation sheet is preferably flexible and preferably has voids. The sensor unit preferably further comprises a sound insulation sheet covering another face of the piezoelectric element and substantially preventing transmission of sound from a second face toward a first face of the sound insulation sheet.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: June 2, 2020
    Inventors: Tomoya Miyata, Kunio Hiyama, Seiichiro Iida, Hiroshi Koike, Hidekazu Kodama
  • Patent number: 5602418
    Abstract: A nitride semiconductor device is made using a molecular beam epitaxy growth apparatus having a gas source for supplying a compound including gaseous nitrogen, solid body sources for supplying Group III constituents, and sources for supplying n-type and p-type dopants. A gaseous state compound containing nitrogen, and a Group III constituent is supplied to the surface of a substrate, wherein the substrate is at a temperature of to C. and is under a pressure of less than 10.sup.-5 Torr, to produce a first layer of oriented polycrystalline nitride semiconductor on the substrate at a growth rate of 0.1 to 20 Angstroms/second. Subsequently, a gaseous state compound containing nitrogen and a Group III constituent is supplied to the surface of the first layer of the substrate to produce a single crystal nitride semiconductor layer on the first layer at a growth rate of 0.1 to 10 Angstroms/second.
    Type: Grant
    Filed: September 22, 1994
    Date of Patent: February 11, 1997
    Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
    Inventors: Hideaki Imai, Kunio Miyata, Tadahiko Hirai
  • Patent number: 5104633
    Abstract: A method and apparatus for producing or manufacturing a high purity metallic silicon takes a process for generating silicon monoxide by causing reaction between a silicon dioxide containing material and molten state metallic silicon. The silicon monoxide thus generated is sucked for reduction by means of a reducing agent including a carbon containing material and a silicon containing material.
    Type: Grant
    Filed: December 18, 1989
    Date of Patent: April 14, 1992
    Assignees: Kawasaki Steel Corporation, Technical Research Division, Nippon Sheet Glass Co., Ltd.
    Inventors: Yasuhiko Sakaguchi, Fukuo Aratani, Kazuhiro Uchino, Mitsugi Yoshiyagawa, Kunio Miyata, Masato Ishizaki, Tetsuro Kawahara
  • Patent number: 5095196
    Abstract: A system for examining a passer having an ID card including a photograph and key data for searching registered data of the passer. This system has a data base storing registered data including a video image of the registered ID card owner, a video camera for capturing the passer's figure and a scanner for scanning the photograph of the ID card. The system searches corresponding data, including the video image data, in the data base, using the key data, and displays the found image, passer's image and the scanned photograph image in a display for comparison by an examiner. The system can be combined with a controllable gate system which the examiner can operate based on the results of the examination.
    Type: Grant
    Filed: December 28, 1989
    Date of Patent: March 10, 1992
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Kunio Miyata
  • Patent number: 4919521
    Abstract: An electromagnetic device comprising solid matrix layer, wherein micro-capsules containing suspension anisotropic particles are dispersed, and a means for applying electric field or magnetic field to the anisotropic particles. According to the present invention, not only range of transmittance of solar radiation can be much improved, but also a smart window of large scale having nonuniformity of thickness and nonuniformity of density of particles can be realized.
    Type: Grant
    Filed: June 2, 1988
    Date of Patent: April 24, 1990
    Assignee: Nippon Sheet Glass Co., Ltd.
    Inventors: Hiroaki Tada, Harunobu Yoshida, Hideo Kawahara, Kunio Miyata