Patents by Inventor Kunio Suzuki

Kunio Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5089426
    Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for provessing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result even if transparent electrode is provided on the semiconductor layer.
    Type: Grant
    Filed: January 16, 1990
    Date of Patent: February 18, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Masato Susukida, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Kaoru Koyanagi, Susumu Nagayama
  • Patent number: 5052295
    Abstract: A paper web threading apparatus for a rotary printing press comprises a paper web threading member guide provided along a paper web threading path of the printing press extending from a paper web supply section to a position just in front of a folding section; a paper web threading member pooling section provided downstream of the paper web threading path; a paper web threading member which is located over the whole length of the paper web threading path extending from the most upstream position thereof to the paper web threading member pooling section upon commencement of the paper web threading operation and which is run along the paper web threading member guide towards the paper web threading member pooling section during the paper web threading operation; a paper web retaining member provided on the paper web threading member for securing the paper web to the threaded along the path; and at least one paper web threading member driving unit for running the paper web threading member along the paper web th
    Type: Grant
    Filed: September 18, 1990
    Date of Patent: October 1, 1991
    Assignee: Kabushiki Kaisha Tokyo Kikai Seisakusho
    Inventors: Kunio Suzuki, Tomoshi Kawata
  • Patent number: 5039928
    Abstract: A portable electric appliance is provided with a solar energy accumulator. The accumulator is integrally mounted on the electric appliance when the appliance is desired to operate or be transported. When the portable electric appliance is not used, the accumulator is removed from the appliance and moved to a bright place.
    Type: Grant
    Filed: December 11, 1989
    Date of Patent: August 13, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuo Nishi, Kunio Suzuki, Mikio Kinka, Akemi Satake, Shuichi Kugawa
  • Patent number: 5035753
    Abstract: A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.
    Type: Grant
    Filed: December 22, 1989
    Date of Patent: July 30, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kunio Suzuki, Masayoshi Abe, Mikio Kinka, Yasuyuki Arai, Akemi Satake, Kazuo Nishi, Shuichi Kugawa, Noriya Ishida
  • Patent number: 5034971
    Abstract: In composition of a mask for X-ray lithography made up of a substrate and one or more metallic pattern layer of high soft X-ray absorption, conventional ceramic for the substrate is replaced by Be. High X-ray permeability of Be allows use of a thick construction for the substrate, thereby raising mechanical properties of the mask and assuring clear contrast in X-ray exposure of resist. Closeness in thermal expansion between the substrate and the pattern layer precludes the danger of undesirable separation, warping and breakage.
    Type: Grant
    Filed: January 29, 1990
    Date of Patent: July 23, 1991
    Assignee: Yamaha Corporation
    Inventor: Kunio Suzuki
  • Patent number: 5017245
    Abstract: A method for fabricating a beryllium or a beryllium alloy thin plate member for uses requiring great mechanical strength, such as X-ray aligners. A beryllium or a beryllium alloy is deposited on a base structure, and the base structure is then etched away to leave the thin film. However, bubbles or hollow spaces form in the thin film during the deposition stage. The thin film is shaped by using hot rolling, thereby improving the density and accordingly the mechanical strength.
    Type: Grant
    Filed: April 14, 1989
    Date of Patent: May 21, 1991
    Assignee: Yamaha Corporation
    Inventors: Kunio Suzuki, Kenji Takeuchi
  • Patent number: 4987005
    Abstract: An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.
    Type: Grant
    Filed: August 21, 1989
    Date of Patent: January 22, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kunio Suzuki, Takeshi Fukada, Mikio Kinka, Masayoshi Abe, Katsuhiko Shibata, Masato Susukida, Noriya Ishida, Akemi Satake, Yasuyuki Arai
  • Patent number: 4986213
    Abstract: An improved semiconductor processing is desclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
    Type: Grant
    Filed: September 28, 1988
    Date of Patent: January 22, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
  • Patent number: 4981824
    Abstract: A novel ceramic material affording a ceramic molded bodies having a high toughness and a high tensile strength is disclosed which comprises a smectite clay mineral having at least a portion of ion-exchangeable cations thereof ion-exchanged with bismuth ions. The ceramic material is prepared by treating a smectite clay mineral with an aqueous solution containing bismuth ions to ion-exchange at least a portion of ion-exchangeable cations thereof with bismuth ions.
    Type: Grant
    Filed: March 15, 1989
    Date of Patent: January 1, 1991
    Assignee: Director - General of Agency of Industrial Science and Technology
    Inventors: Michiko Yonemura, Tadao Sekine, Yoshimichi Kiyozumi, Kunio Suzuki, Kunio Uchida, Fumikazu Ikazaki, Shigemitsu Shin
  • Patent number: 4958024
    Abstract: A process for preparing a 2-carbamoylocxyalkyl-1,4-dihydropyridine derivative represented by the general formula: ##STR1## which comprises: (a) reacting a 3-amino-3-carbamoyloxyalkylacrylic acid derivative represented by the general formula: ##STR2## with a benzylidene compound represented by the general formula: ##STR3## (b) reacting the 3-amino-3-carbamoyloxyalkylacrylic acid derivative of the general formula II with an aldehyde compound represented by the general formula: ##STR4## and a .beta.-keto-ester compound represented by the general formula:R.sup.4 --CO--CH.sub.2 --COOR.sup.2 (V)(c) reacting a 3-carbamoyloxyalkylpropiolic acid derivative represented by the general formula: ##STR5## with the benzylidene compound of the general formula III and ammonia or its salt; or(d) reacting the 3-carbamoyloxyalkylpropiolic acid derivative of the general formula VI with the aldehyde compound of the general formula IV, the .beta.-keto-ester compound of the general formula V and ammonia or its salt.
    Type: Grant
    Filed: August 10, 1988
    Date of Patent: September 18, 1990
    Assignee: Banyu Pharmaceutical Company, Ltd.
    Inventors: Tetsuji Miyano, Kunio Suzuki, Ryosuke Ushijima, Susumu Nakagawa
  • Patent number: 4937651
    Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.
    Type: Grant
    Filed: August 22, 1986
    Date of Patent: June 26, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi
  • Patent number: 4914227
    Abstract: A process for preparing a 2-carbamoyloxyalkyl-1,4-dihydropyridine derivative represented by the general formula: ##STR1## which comprises: (a) reacting a 3-amino-3-carbamoyloxyalkylacrylic acid derivative represented by the general formula: ##STR2## with a benzylidene compound represented by the general formula: ##STR3## (b) reacting the 3-amino-3-carbamoyloxyalkylacrylic acid derivative of the general formula II with an aldehyde compound represented by the general formula: ##STR4## and a .beta.-keto-ester compound represented by the general formula:R.sup.4 --CO--CH.sub.2 --COOR.sup.2 (V)(c) reacting a 3-carbamoyloxyalkylpropiolic acid derivative represented by the general formula: ##STR5## with the benzylidene compound of the general formula III and ammonia or its salt; or(d) reacting the 3-carbamoyloxyalkylpropiolic acid derivative of the general formula VI with the aldehyde compound of the general formula IV, the .beta.-keto-ester compound of the general formula V and ammonia or its salt.
    Type: Grant
    Filed: May 16, 1986
    Date of Patent: April 3, 1990
    Assignee: Banyu Pharmaceutical Company, Ltd.
    Inventors: Tetsuji Miyano, Kunio Suzuki, Ryosuke Ushijima, Susumu Nakagawa
  • Patent number: 4888305
    Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
    Type: Grant
    Filed: March 9, 1989
    Date of Patent: December 19, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
  • Patent number: 4884623
    Abstract: In production of a gap spacer for magnetic heads in electric and electronic appliances, accumulation of a non-magnetic material insoluble to acids or alkalis on a thin base soluble to these solvents is employed with use of a proper mask as a substitute for the conventional rolling process. Stable growth in thickness of the non-magnetic material during the accumulation process assures highly precise thickness uniformity of the product via easy time control of the process and absence of the rolling process allows broader freedom in choice of the material.
    Type: Grant
    Filed: December 8, 1988
    Date of Patent: December 5, 1989
    Assignee: Yamaha Corp.
    Inventors: Kunio Suzuki, Masayuki Takamura, Tadashi Kubono
  • Patent number: 4866230
    Abstract: In a method of controlling a floating zone of a semiconductor rod of the present invention shown in FIG. 1, the diameter D.sub.s at a crystallization boundary of a crystal and the axial length of the floating zone are indirectly controlled by controlling a diameter D.sub.m of a crystallizing-side melt shoulder portion and the diameter D.sub.n of a constricted melt portion, respectively. Since these diameters D.sub.m and D.sub.n are used for predicting D.sub.s and L to be obtained after a given time has passed, the response speed and stability of the control are improved as compared with the direct control of D.sub.s and L. An apparatus for controlling a floating zone of a semiconductor rod of the present invention performs the above-described method. In another method, the zone length is directly or indirectly controlled by regulating a relative moving speed of the melting-side semiconductor rod relative to the heater, and the diameter D.sub.
    Type: Grant
    Filed: December 11, 1987
    Date of Patent: September 12, 1989
    Assignee: Shin-Etu Handotai Company, Limited
    Inventors: Yasuhiro Ikeda, Kunio Suzuki, Masataka Watanabe, Nobuhiro Ohara
  • Patent number: 4847981
    Abstract: In production of a diaphragm for acoustic appliances, a thin metal layer is formed on a substrate by means of vapor phase development so that the density of the product should be high enough for generating high sound pressure even in the high frequency range.
    Type: Grant
    Filed: April 21, 1988
    Date of Patent: July 18, 1989
    Assignee: Yamaha Corporation
    Inventors: Kunio Suzuki, Toshiharu Hoshi
  • Patent number: 4847669
    Abstract: An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.
    Type: Grant
    Filed: December 17, 1986
    Date of Patent: July 11, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masayoshi Abe, Susumu Nagayama, Kunio Suzuki, Takeshi Fukada, Mikio Kinka, Katsuhiko Shibata, Masato Susukida
  • Patent number: 4828668
    Abstract: An improved sputtering system for depositing film on a substrate is disclosed. The system comprises a vacuum chamber, a pair of electrodes with a target inbetween, a cart on which a plurality of substrates are mounted and a transportation mechanism for transporting the cart passing through the deposition space between the electrodes. The substrates are mounted perpendicular to the electric field induced by the pair of electrodes.
    Type: Grant
    Filed: March 9, 1987
    Date of Patent: May 9, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Katsuhiko Shibata, Hisato Shinohara, Masato Susukida
  • Patent number: 4826711
    Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, fluorine gas is introduced just after formation of semiconductor layer in a reaction. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
    Type: Grant
    Filed: August 8, 1986
    Date of Patent: May 2, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama
  • Patent number: 4812415
    Abstract: An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.
    Type: Grant
    Filed: August 6, 1987
    Date of Patent: March 14, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kunio Suzuki, Mikio Kinka, Takeshi Fukada, Masayoshi Abe, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Susumu Nagayama, Kaoru Koyanagi