Patents by Inventor Kunpeng JIA

Kunpeng JIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240021483
    Abstract: The disclosed technology provides a semiconductor device, a manufacturing method thereof, and an electronic device including the device. An example semiconductor device includes a substrate; a first device and a second device on the substrate. Each of the first device and the second device include a first source/drain layer, a channel layer, and a second source layer that are sequentially stacked, from bottom to top, on the substrate, and a gate stack around at least a part of an outer periphery of the channel layer, with sidewalls of the respective channel layers of the first device and the second device extending at least partially along different crystal planes or crystal plane families.
    Type: Application
    Filed: September 28, 2023
    Publication date: January 18, 2024
    Inventors: Huilong ZHU, Yongkui ZHANG, Xiaogen YIN, Chen LI, Yongbo LIU, Kunpeng JIA
  • Patent number: 11822207
    Abstract: The present disclosure discloses a method and apparatus for generating an optical frequency comb. The specific generation method comprises: receiving a pump laser that matches a thermally stable state of a nonlinear optical resonant cavity and causing the pump laser to oscillate in the nonlinear optical resonant cavity, such that a Brillouin gain corresponding to the pump laser coincides with a target longitudinal mode in the nonlinear optical resonant cavity; continuously generating a Brillouin laser at the target longitudinal mode in the case that a pump power of the pump laser exceeds a threshold for generating the Brillouin laser; and generating an optical frequency comb by using the Brillouin laser through a Kerr nonlinear four-wave mixing process. According to the technical solution of the present disclosure, the nonlinear optical resonant cavity with the Brillouin gain can generate an optical frequency comb in its thermally stable region.
    Type: Grant
    Filed: April 1, 2022
    Date of Patent: November 21, 2023
    Assignees: Nanjing University, The Regents of the University of Colorado, A Body Corporate
    Inventors: Zhenda Xie, Shuwei Huang, Kunpeng Jia, Xiaohan Wang, Gang Zhao, Shining Zhu
  • Patent number: 11523610
    Abstract: Embodiments of the present disclosure describe diapocarotenoid plant growth regulators represented by formula (I): R-A-R (I) or a precursor, salt, solvate, stereoisomer or polymorph thereof; wherein R is a monovalent carbonyl moiety selected from the group consisting of aldehydes, ethers, diethers, carboxylic acids, alcohols, and ester carboxylates and A is a bivalent polyene represented by the bivalent moiety —(CRa?CRb)x—, wherein x is the number of double bonds in polyene moiety A, and Ra and Rb are, independently, hydrogen, a hydrocarbon, or an alkoxy group, and composition of the diapocarotenoid plant growth regulators in an agronomically acceptable carrier.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: December 13, 2022
    Assignees: King Abdullah University of Science and Technology, Duke University
    Inventors: Salim Al-Babili, Kunpeng Jia, Alexandra Jazz Dickinson
  • Publication number: 20220221769
    Abstract: The present disclosure discloses a method and apparatus for generating an optical frequency comb. The specific generation method comprises: receiving a pump laser that matches a thermally stable state of a nonlinear optical resonant cavity and causing the pump laser to oscillate in the nonlinear optical resonant cavity, such that a Brillouin gain corresponding to the pump laser coincides with a target longitudinal mode in the nonlinear optical resonant cavity; continuously generating a Brillouin laser at the target longitudinal mode in the case that a pump power of the pump laser exceeds a threshold for generating the Brillouin laser; and generating an optical frequency comb by using the Brillouin laser through a Kerr nonlinear four-wave mixing process. According to the technical solution of the present disclosure, the nonlinear optical resonant cavity with the Brillouin gain can generate an optical frequency comb in its thermally stable region.
    Type: Application
    Filed: April 1, 2022
    Publication date: July 14, 2022
    Inventors: Zhenda Xie, Shuwei Huang, Kunpeng Jia, Xiaohan Wang, Gang Zhao, Shining Zhu
  • Publication number: 20220085043
    Abstract: Disclosed are a semiconductor device, a method for manufacturing the same, an integrated circuit, and an electronic apparatus. The semiconductor device includes: a substrate; an active region on the substrate, the active region includes a first source and drain layer, a channel layer, and a second source and drain layer sequentially stacked on the substrate; a gate stack formed around an outer periphery of the channel layer; and an intermediate dielectric layer and a second conductive layer around an outer periphery of the gate stack and an outer periphery of the active region. The device and method provided by the present disclosure are used to solve the technical problem that the performances of the vertical device in the related art need to be improved. A semiconductor device with better performances is provided.
    Type: Application
    Filed: April 9, 2019
    Publication date: March 17, 2022
    Inventors: Huilong Zhu, Weixing Huang, Kunpeng Jia
  • Publication number: 20210193533
    Abstract: The disclosed technology provides a semiconductor device, a manufacturing method thereof, and an electronic device including the device. An example semiconductor device includes a substrate; a first device and a second device on the substrate. Each of the first device and the second device include a first source/drain layer, a channel layer, and a second source layer that are sequentially stacked, from bottom to top, on the substrate, and a gate stack around at least a part of an outer periphery of the channel layer, with sidewalls of the respective channel layers of the first device and the second device extending at least partially along different crystal planes or crystal plane families.
    Type: Application
    Filed: October 31, 2018
    Publication date: June 24, 2021
    Inventors: Huilong ZHU, Yongkui ZHANG, Xiaogen YIN, Chen Li, Yongbo LIU, Kunpeng JIA
  • Publication number: 20210000108
    Abstract: Embodiments of the present disclosure describe diapocarotenoid plant growth regulators represented by formula (I): R-A-R (I) or a precursor, salt, solvate, stereoisomer or polymorph thereof; wherein R is a monovalent carbonyl moiety selected from the group consisting of aldehydes, ethers, diethers, carboxylic acids, alcohols, and ester carboxylates and A is a bivalent polyene represented by the bivalent moiety —(CRa?CRb)x—, wherein x is the number of double bonds in polyene moiety A, and Ra and Rb are, independently, hydrogen, a hydrocarbon, or an alkoxy group, and composition of the diapocarotenoid plant growth regulators in an agronomically acceptable carrier.
    Type: Application
    Filed: March 20, 2019
    Publication date: January 7, 2021
    Inventors: Salim AL-BABILI, Kunpeng JIA, Alexandra Jazz DICKINSON
  • Patent number: 10141408
    Abstract: A method and an arrangement for reducing a contact resistance of a two-dimensional crystal material are provided. An example method may include forming a contact material layer on a two-dimensional crystal material layer; performing ion implantation; and performing thermal annealing.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: November 27, 2018
    Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Kunpeng Jia, Yajuan Su, Huilong Zhu, Chao Zhao
  • Publication number: 20170263452
    Abstract: A method for manufacturing a two-dimensional material structure and a resultant two-dimensional material device. The method comprises steps of: forming a sacrificial FIN structure on a substrate; covering the sacrificial FIN structure with a dielectric; releasing the sacrificial FIN structure; forming a carrier FIN structure at a position for releasing the sacrificial FIN; and self-restrictedly growing two-dimensional material structure by taking the carrier FIN structure as a substrate. Utilizing the sacrificial FIN structure to implement self-restrictedly growing of the nanometer structure of the two-dimensional material results in a high precision, lower edge roughness, high yields and low process deviation as well as compatibility with the processing of CMOS large scale integrated circuits, making the method suitable for a large scale production of the two-dimensional material and related devices.
    Type: Application
    Filed: September 9, 2016
    Publication date: September 14, 2017
    Inventors: Yajuan SU, Kunpeng JIA, Chao ZHAO, Jun ZHAN, Heshi CAO
  • Publication number: 20150318356
    Abstract: A method and an arrangement for reducing a contact resistance of a two-dimensional crystal material are provided. An example method may include forming a contact material layer on a two-dimensional crystal material layer; performing ion implantation; and performing thermal annealing.
    Type: Application
    Filed: March 18, 2014
    Publication date: November 5, 2015
    Inventors: Kunpeng JIA, Yajuan SU, Huilong ZHU, Chao ZHAO