Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Abstract: The present disclosure relates to a power management system. The power management system comprises a first power supply device, a second power supply device, a power supply control device, a data processing device and a load. The power supply control device is connected to the first power supply device. The data processing device is connected to the first power supply device, the second power supply device and the power supply control device. The load is connected to the first power supply device and the second power supply device. The power supply control device is configured to, when activated, provide a first signal to the data processing device. The data processing device is configured to select the first power supply device or the second power supply device to provide power to the load according to the first signal.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a gate stacking structure, a first insulating layer, a second insulating layer and a first spacer. The gate stacking structure is disposed over a substrate. The first insulating layer covers a top surface and a sidewall of the gate stacking structure. The second insulating layer covers a surface of the first insulating layer. A top corner region of the gate stacking structure is covered by the first and second insulating layers. The first spacer is located on the sidewall of the gate stacking structure, and covers a surface of the second insulating layer. A topmost end of the first spacer is lower than a topmost surface of the second insulating layer.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: A cleaning apparatus and a method of using the cleaning apparatus are provided. The method includes first moving a pencil pad into contact with a top surface of a wafer, wherein the pencil pad is connected to a pivot arm and second moving the pivot arm in a sweeping motion from a first zone to a second zone, the first zone being closer to a center of the top surface of the wafer than the second zone, wherein the sweeping motion is controlled by a controller, the pivot arm moves at a first speed in the first zone and the pivot arm moves at a second speed in the second zone, wherein the first speed is different from the second speed.

Abstract: The present disclosure relates to a power management system. The power management system comprises a first power supply device, a second power supply device, a power supply control device, a data processing device and a load. The power supply control device is connected to the first power supply device. The data processing device is connected to the first power supply device, the second power supply device and the power supply control device. The load is connected to the first power supply device and the second power supply device. The power supply control device is configured to, when activated, provide a first signal to the data processing device. The data processing device is configured to select the first power supply device or the second power supply device to provide power to the load according to the first signal.

Abstract: The present disclosure relates to a power management system. The power management system comprises a first power supply device, a second power supply device, a power supply control device, a data processing device and a load. The power supply control device is connected to the first power supply device. The data processing device is connected to the first power supply device, the second power supply device and the power supply control device. The load is connected to the first power supply device and the second power supply device. The power supply control device is configured to, when activated, provide a first signal to the data processing device. The data processing device is configured to select the first power supply device or the second power supply device to provide power to the load according to the first signal.

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

Abstract: A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a Group III element and a Group V element, and an atomic ratio of the Group III element to the Group V element of the first sub-layer is less than an atomic ratio of the Group III element to the Group V element of the second sub-layer.

Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

Abstract: An adapter for connecting to a connector in a first direction is provided. The adapter includes a plurality of signal pins, arranged in a loop, a power pin, configured to transmit a power signal to the connector, and a detection circuit, coupled to the power pin and the plurality of signal pins. A feedback signal is provided by the connector in response to the power signal that is transmitted through one of the plurality of signal pins, and an interface of the connector is identified by the detection circuit and a pin order of the adapter is defined by the detection circuit according to the feedback signal.