Patents by Inventor Kuo-Tong Chen

Kuo-Tong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming pin alloy-semiconductor devices with rectifying junction contacts
    Patent number: 7064082
    Abstract: The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The present invention provides a means of creating rectifying junction contacts on alloy-semiconductor devices such as CdTe and CdZnTe, among others. In addition, the present invention also provides a simple and low cost method for revealing wafer surface morphology of alloy-semiconductors, thus providing an efficient and effective means for selecting single grain semiconductor substrates. Further, the present invention provides radiation detectors employing such alloy-semiconductor devices having improved rectifying junctions as the detector element.
    Type: Grant
    Filed: January 15, 2004
    Date of Patent: June 20, 2006
    Assignee: Science Applications International Corporation
    Inventors: Raulf M. Polichar, Kuo-Tong Chen
  • PIN ALLOY-SEMICONDUCTOR, RADIATION DETECTORS WITH RECTIFYING JUNCTION CONTACTS, METHODS AND SYSTEMS FOR FORMING PIN ALLOY-SEMICONDUCTOR DEVICES WITH RECTIFYING JUNCTION CONTACTS, AND SYSTEMS AND METHODS FOR ANALYZING ALLOY-SEMICONDUCTOR PROPERTIES
    Patent number: 6803322
    Abstract: The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The present invention provides a means of creating rectifying junction contacts on alloy-semiconductor devices such as CdTe and CdZnTe, among others. In addition, the present invention also provides a simple and low cost method for revealing wafer surface morphology of alloy-semiconductors, thus providing an efficient and effective means for selecting single grain semiconductor substrates. Further, the present invention provides radiation detectors employing such alloy-semiconductor devices having improved rectifying junctions as the detector element.
    Type: Grant
    Filed: December 15, 2000
    Date of Patent: October 12, 2004
    Assignee: Science Applications International Corporation
    Inventors: Raulf M. Polichar, Kuo-Tong Chen
  • PIN alloy-semiconductor, radiation detectors with rectifying junction contacts, methods and systems for forming PIN alloy-semiconductor devices with rectifying junction contacts, and systems and methods for analyzing alloy-semiconductor properties
    Publication number: 20040185672
    Abstract: The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The present invention provides a means of creating rectifying junction contacts on alloy-semiconductor devices such as CdTe and CdZnTe, among others. In addition, the present invention also provides a simple and low cost method for revealing wafer surface morphology of alloy-semiconductors, thus providing an efficient and effective means for selecting single grain semiconductor substrates. Further, the present invention provides radiation detectors employing such alloy-semiconductor devices having improved rectifying junctions as the detector element.
    Type: Application
    Filed: January 15, 2004
    Publication date: September 23, 2004
    Inventors: Raulf M. Polichar, Kuo-Tong Chen
  • Method for surface treatment of a cadmium zinc telluride crystal
    Patent number: 5933706
    Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface.
    Type: Grant
    Filed: May 28, 1997
    Date of Patent: August 3, 1999
    Inventors: Ralph James, Arnold Burger, Kuo-Tong Chen, Henry Chang