Patents by Inventor Kurt Pang

Kurt Pang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10567464
    Abstract: A video stream of a scene for a virtual reality or augmented reality experience may be captured by one or more image capture devices. Data from the video stream may be retrieved, including base vantage data with base vantage color data depicting the scene from a base vantage location, and target vantage data with target vantage color data depicting the scene from a target vantage location. The base vantage data may be reprojected to the target vantage location to obtain reprojected target vantage data. The reprojected target vantage data may be compared with the target vantage data to obtain residual data. The residual data may be compressed by removing a subset of the residual data that is likely to be less viewer-discernable than a remainder of the residual data. A compressed video stream may be stored, including the base vantage data and the compressed residual data.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: February 18, 2020
    Assignee: GOOGLE LLC
    Inventors: Derek Pang, Colvin Pitts, Kurt Akeley
  • Patent number: 10546424
    Abstract: A virtual reality or augmented reality experience of a scene may be presented to a viewer using layered data retrieval and/or processing. A first layer of a video stream may be retrieved, and a first viewer position and/or orientation may be received. The first layer may be processed to generate first viewpoint video of the scene from a first virtual viewpoint corresponding to the first viewer position and/or orientation. The first viewpoint video may be displayed for the viewer. Then, a second layer of the video stream may be retrieved, and a second viewer position and/or orientation may be received. The second layer may be processed to generate second viewpoint video of the scene from a second virtual viewpoint corresponding to the second viewer position and/or orientation, with higher quality than the first viewpoint video. The second viewpoint video may be displayed for the viewer.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: January 28, 2020
    Assignee: GOOGLE LLC
    Inventors: Derek Pang, Colvin Pitts, Kurt Akeley
  • Patent number: 10469873
    Abstract: A virtual reality or augmented reality experience of a scene may be decoded for playback for a viewer through a combination of CPU and GPU processing. A video stream may be retrieved from a data store. A first viewer position and/or orientation may be received from an input device, such as the sensor package on a head-mounted display (HMD). At a processor, the video stream may be partially decoded to generate a partially-decoded bitstream. At a graphics processor, the partially-decoded bitstream may be further decoded to generate viewpoint video of the scene from a first virtual viewpoint corresponding to the first viewer position and/or orientation. The viewpoint video may be displayed on a display device, such as screen of the HMD.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: November 5, 2019
    Assignee: Google LLC
    Inventors: Derek Pang, Colvin Pitts, Kurt Akeley, Zeyar Htet
  • Patent number: 10419737
    Abstract: A video stream for a scene for a virtual reality or augmented reality experience may be stored and delivered to a viewer. The video stream may be divided into a plurality of units based on time segmentation, viewpoint segmentation, and/or view orientation segmentation. Each of the units may be divided into a plurality of sub-units based on a different segmentation from the units, via time segmentation, viewpoint segmentation, and/or view orientation segmentation. At least a portion of the video stream may be stored in a file that includes a plurality of the units. Each unit may be a group of pictures that is a sequence of successive frames in time. Each sub-unit may be a vantage defining a viewpoint from which the scene is viewable. Each vantage may be further divided into tiles, each of which is part of the vantage, limited to one or more particular view orientations.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: September 17, 2019
    Assignee: GOOGLE LLC
    Inventors: Derek Pang, Colvin Pitts, Kurt Akeley
  • Patent number: 10341632
    Abstract: An environment may be displayed from a viewpoint. According to one method, volumetric video data may be acquired depicting the environment, for example, using a tiled camera array. A plurality of vantages may be distributed throughout a viewing volume from which the environment is to be viewed. The volumetric video data may be used to generate video data for each vantage, representing the view of the environment from that vantage. User input may be received designating a viewpoint within the viewing volume. From among the plurality of vantages, a subset nearest to the viewpoint may be identified. The video data from the subset may be retrieved and combined to generate viewpoint video data depicting the environment from the viewpoint. The viewpoint video data may be displayed for the viewer to display a view of the environment from the viewpoint selected by the user.
    Type: Grant
    Filed: May 9, 2017
    Date of Patent: July 2, 2019
    Inventors: Derek Pang, Colvin Pitts, Kurt Akeley
  • Patent number: 9324767
    Abstract: Provided are superconducting tunnel junctions, such as Josephson tunnel junctions, and a method of fabricating thereof. A junction includes an insulator disposed between two superconductors. The junction may also include one or two interface layers, with each interface layer disposed between the insulator and one of the superconductors. The interface layer is configured to prevent oxygen from entering the adjacent superconductor during fabrication and operation of the junction. Furthermore, the interface layer may protect the insulator from the environment during handling and processing of the junction, thereby allowing vacuum breaks after the interface layer is formed as well as new integration schemes, such as depositing a dielectric layer and forming a trench in the dielectric layer for the second superconductor. In some embodiments, the junction may be annealed during its fabrication to move oxygen from the superconductors and/or from the insulator into the one or two interface layers.
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: April 26, 2016
    Assignee: Intermolecular, Inc.
    Inventors: Andrew Steinbach, Tony Bonetti, Frank Greer, Kurt Pang, Yun Wang
  • Publication number: 20150176122
    Abstract: Ternary oxides, nitrides and oxynitrides of the form (a)(b)OxNy are formed by ALD or CVD when the reaction temperature ranges of the (a) precursor and the (b) precursor do not overlap. Chemically-reacted sub-layers, e.g., (a)OxNy, are formed by reacting the lower-temperature precursor with O and/or N at a temperature within its reaction range. Physisorbed sub-layers (e.g., (b) or (b)+ligand) are formed between the chemically-reacted sub-layers by allowing the higher-temperature precursor to physically adsorb to the low-temperature surface. When the desired sub-layers are formed, the substrate is heated to a temperature at which the higher-temperature precursor reacts (optionally in the presence of more O and/or N) to form (a)(b)OxNy. Quarternary and more complex compounds can be similarly formed.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 25, 2015
    Applicant: Intermolecular Inc.
    Inventors: Chien-Lan Hsueh, Tony P. Chiang, Randall J. Higuchi, Kurt Pang
  • Patent number: 8901677
    Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: December 2, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Frank Greer, Edwin Adhiprakasha, Chi-I Lang, Ratsamee Limdulpaiboon, Sandip Niyogi, Kurt Pang, J. Watanabe
  • Publication number: 20140273525
    Abstract: Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 ?-thick Al2O3 films.
    Type: Application
    Filed: September 6, 2013
    Publication date: September 18, 2014
    Applicant: Intermolecular, Inc.
    Inventors: Kurt Pang, Sean Barstow, Chi-I Lang, Michael Miller, Sandip Niyogi, Prashant B. Phatak
  • Publication number: 20140252565
    Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.
    Type: Application
    Filed: March 5, 2014
    Publication date: September 11, 2014
    Applicant: Intermolecular, Inc.
    Inventors: Frank Greer, Edwin Adhiprakasha, Chi-I Lang, Ratsamee Limdulpaiboon, Sandip Niyogi, Kurt Pang, J. Watanabe
  • Patent number: 6177329
    Abstract: A method for forming gas pockets within integrated circuit devices to provide dielectric isolation between selected conductive structures in the integrated circuit device. The method is useable with many known integrated circuit manufacturing processes wherein the resulting device comprises, preferably, an uppermost layer of intermetal dielectric, on which the method of the present invention may be performed. In general, the method of the invention comprises the following steps. Providing an integrated circuit device structure with a top layer at least partly formed of a segregated conductive material and a solid dielectric material. Forming a mask over the top layer. Forming openings in the mask corresponding to positions where gas pockets are desired in the finished integrated circuit device. Etching through the openings in the mask to form gaps in the dielectric material of the top layer.
    Type: Grant
    Filed: April 15, 1999
    Date of Patent: January 23, 2001
    Inventor: Kurt Pang