Abstract: A method is provided for controlling the channel length in a thin-film transistor (TFT). The method forms a printed ink first source/drain (S/D) structure overlying a substrate. A fluoropolymer mask is deposited to cover the first S/D structure. A boundary region is formed between the edge of the fluoropolymer mask and the edge of the printed ink first S/D structure, having a width. Then, a primary ink is printed at least partially overlying the boundary region, forming a printed ink second S/D structure, having an edge adjacent to the fluoropolymer mask edge. After removing the fluoropolymer mask, the printed ink first S/D structure edge is left separated from the printed ink second S/D structure edge by a space equal to the boundary region width. A semiconductor channel is formed partially overlying the first and second S/D structures, having a channel length equal to the boundary region width.

Abstract: A method is provided for forming a printed top gate thin film transistor (TFT) with a short channel length. The method provides a substrate with a low surface energy top surface. A metal ink line is continuously printed across a region of the substrate top surface, and in response to the surface tension of the printed metal ink, discrete spherical ink caps are formed in the region. Then, the surface energy of the substrate top surface in the region is increased. A source metal ink line is printed overlying a source spherical ink cap contact, and a drain metal ink line, parallel to the source metal ink line, is printed overlying a drain spherical ink cap contact. After depositing a semiconductor film, a channel is formed in the semiconductor film between the source and drain spherical ink cap contacts having a channel length equal to the first distance.

Abstract: A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.

Abstract: A method is provided for controlling printed ink horizontal cross-sectional areas using fluoropolymer templates. The method initially forms a fluoropolymer template overlying a substrate. The fluoropolymer template has a horizontal first cross-sectional dimension. Then, a primary ink is printed overlying the fluoropolymer template having a horizontal second cross-sectional dimension less than the first cross-sectional dimension. In the case of a fluoropolymer line having a template length greater than a template width, where the template width is the first cross-sectional dimension, printing the primary ink entails printing a primary ink line having an ink length greater than an ink width, where the ink width is the second cross-sectional dimension. In one aspect, the method prints a plurality of primary ink layers, each primary ink layer having an ink width less than the template width. Each overlying primary ink layer can be printed prior to solvents in underlying primary ink layers evaporating.

Abstract: A method is provided for repairing defects in a contact printed circuit. The method provides a substrate with a contact printed circuit formed on a substrate top surface. After detecting a discontinuity in a printed circuit feature, a bias voltage is applying to at least one of a first region of the printed circuit feature or a second region of the printed circuit feature. The bias voltage may also be applied to both the first and second regions. An electric field is formed between the bias voltage and an ink delivery nozzle having a voltage potential less than the bias voltage. Conductive ink is attracted into the electric field from the ink delivery nozzle. Conductive is printed ink on the discontinuity, forming a conductive printed bridge. Typically, the ink delivery nozzle is an electrohydrodynamic (EHD) printing nozzle.

Abstract: A method is provided for preparing a printed metal surface for the deposition of an organic semiconductor material. The method provides a substrate with a top surface, and a metal layer is formed overlying the substrate top surface. Simultaneous with a thermal treatment of the metal layer, the metal layer is exposed to a gaseous atmosphere with thiol molecules. In response to exposing the metal layer to the gaseous atmosphere with thiol molecules, the work function of the metal layer is increased. Subsequent to the thermal treatment, an organic semiconductor material is deposited overlying the metal layer. In one aspect, the metal layer is exposed to the gaseous atmosphere with thiol molecules by evaporating a liquid containing thiol molecules in an ambient air atmosphere. Alternatively, a delivery gas is passed through a liquid containing thiol molecules. An organic thin-film transistor (OTFT) and OTFT fabrication process are also provided.

Abstract: A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

Abstract: A method is provided for controlling the channel length in a thin-film transistor (TFT). The method forms a printed ink first source/drain (S/D) structure overlying a substrate. A fluoropolymer mask is deposited to cover the first S/D structure. A boundary region is formed between the edge of the fluoropolymer mask and the edge of the printed ink first S/D structure, having a width. Then, a primary ink is printed at least partially overlying the boundary region, forming a printed ink second S/D structure, having an edge adjacent to the fluoropolymer mask edge. After removing the fluoropolymer mask, the printed ink first S/D structure edge is left separated from the printed ink second S/D structure edge by a space equal to the boundary region width. A semiconductor channel is formed partially overlying the first and second S/D structures, having a channel length equal to the boundary region width.

Abstract: A method is provided for controlling printed ink horizontal cross-sectional areas using fluoropolymer templates. The method initially forms a fluoropolymer template overlying a substrate. The fluoropolymer template has a horizontal first cross-sectional dimension. Then, a primary ink is printed overlying the fluoropolymer template having a horizontal second cross-sectional dimension less than the first cross-sectional dimension. In the case of a fluoropolymer line having a template length greater than a template width, where the template width is the first cross-sectional dimension, printing the primary ink entails printing a primary ink line having an ink length greater than an ink width, where the ink width is the second cross-sectional dimension. In one aspect, the method prints a plurality of primary ink layers, each primary ink layer having an ink width less than the template width. Each overlying primary ink layer can be printed prior to solvents in underlying primary ink layers evaporating.

Abstract: A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

Abstract: A piezoelectric actuator includes a cantilever membrane. A thin film sheet is affixed to one side of the cantilever membrane to bend the membrane in multiple directions in response to an electric field induced within the thin film sheet. A plurality of coplanar electrodes disposed on the thin film sheet are interdigitated in relation to one another to generate the electric field during application of a voltage across interdigitated electrodes.

Abstract: A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.

Abstract: A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

Abstract: A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.

Abstract: A piezoelectric printhead and related methods provide a first metallic electrode and a second metallic electrode deposited over a top surface and a bottom surface, respectively, of a piezoceramic plate. The second electrode is segmented into a plurality of electrode segments. A diaphragm is positioned over a plurality of pressure chambers, where the diaphragm includes a conductor positioned over each chamber. The piezoceramic plate is attached to the diaphragm such that each conductor on the diaphragm faces multiple electrode segments.

Abstract: A chemical bath deposition (CBD) process is provided for forming a textured zinc oxide film pattern from a zinc oxide printed seed layer. The process provides a substrate and prints a zinc oxide seed layer in a pattern overlying the substrate. Using a CBD process, a textured zinc oxide film is grown overlying the zinc oxide seed layer pattern, where the textured zinc oxide film has a variation in film thickness of greater than 200 nanometers (nm). In one aspect, growing the textured zinc oxide film includes: preparing a ZnO precursor bath; maintaining a bath temperature of about 70 degrees C.; and, leaving the substrate in the bath for about an hour. In another aspect, growing the textured zinc oxide film includes forming a textured zinc oxide film with zinc oxide crystals having a pyramidal shape with a height of greater than 200 nm.

Abstract: A piezoelectric printhead and related methods provide a first metallic electrode and a second metallic electrode deposited over a top surface and a bottom surface, respectively, of a piezoceramic plate. The second electrode is segmented into a plurality of electrode segments. A diaphragm is positioned over a plurality of pressure chambers, where the diaphragm includes a conductor positioned over each chamber. The piezoceramic plate is attached to the diaphragm such that each conductor on the diaphragm faces multiple electrode segments.

Abstract: Embodiments of anodization are disclosed.

Abstract: A reflector for use in a projection system comprises an anodized metal substrate having a metal oxide layer. The metal oxide layer has a plurality of pores. A light absorbing pigment is deposited into each of the pores such that the light absorbing pigment and the metal oxide layer form a light absorbing layer on the metal substrate.

Abstract: A reflector includes a non-uniform metal oxide layer surface.