Abstract: The present invention provides a thermochromic film in which vanadium dioxide can be used without a doping process after the phase transition temperature thereof is reduced, and thus, there are economic and environmental advantages, and a method for manufacturing a thermochromic film, the method comprising: a formation step of forming a coating layer by applying a solution including untreated vanadium oxide onto a substrate; and a formation step of forming a thermochromic layer by phase change of untreated vanadium oxide to vanadium dioxide through annealing using intense pulsed light (IPL).

Abstract: The present invention provides a method of preparing an optical laminate including a substrate and a thermochromic layer formed on the substrate where the thermochromic layer includes a vanadium oxide cluster. The method includes: a formation step of applying a solution containing vanadium oxide particles onto the substrate to form a coating layer, a photo-evaporation step of emitting light to remove organic matter from the coating layer; and a photo-sintering step of emitting light to photo-sinter the vanadium oxide particles contained in the coating layer to prepare a thermochromic layer including a vanadium oxide cluster.

Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.

Abstract: A magnetic memory device includes: (i) a reference magnetic pattern and a free magnetic pattern stacked in vertical alignment relative to a surface of a substrate, and (ii) a tunnel barrier pattern extending between the reference magnetic pattern and the free magnetic pattern. The reference magnetic pattern includes: a first pinned pattern, and a second pinned pattern extending between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern, which extends between the first pinned pattern and the second pinned pattern and antiferromagnetically couples the first pinned pattern and the second pinned pattern to each other. The first pinned pattern includes a first magnetic pattern and a second magnetic pattern extending between the first magnetic pattern and the exchange coupling pattern.

Abstract: A flexible battery may include: an electrode assembly having one or more unit cells each of the unit cells including a pair of electrode plates having different polarities, a separator interposed between the respective electrode plates and electrode tabs that protrude from the respective electrode plates; a pair of electrode leads connected to electrode tabs; and a strengthening tab fixed on any one electrode lead connection tab among the electrode tabs.

Abstract: The present disclosure relates to a stent delivery system, and can be configured to include a connector portion connected to an external current source, an electrocautery tip connected to the connector portion by a conductive line, and a delivery portion having one side connected to the electrocautery tip, having the other side connected to the connector portion, and having the conductive line for connecting the electrocautery tip and the connector portion positioned therein, and a stent space portion in which a stent is positioned is formed adjacent to the electrocautery tip inside the delivery portion, and the delivery portion gradually moves and supplies the stent into the human body tissue, and according to the present disclosure, it is possible to integrate the conductive line and the tube, thereby improving the rigidity of the tube, and varying the size of the electrocautery tip.

Abstract: The present invention provides an optical laminate, and a manufacturing method therefor, the optical laminate comprising a substrate and a thermochromic which is formed on the substrate and which comprises vanadium oxide particles, wherein the adhesive strength between the thermochromic layer and the substrate is 50 N/m or greater, and the thermochromic layer is controlled so as to have a specific pore area ratio. The laminate manufactured by the method of the present invention has excellent visible light transmittance and infrared light transmittance.

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Abstract: The present disclosure relates to a composition of a complex comprising metformin and Chir99021 for treating fibrosis. The composition according to the present disclosure inhibits collagen deposition and inflammatory responses and prevents vascular fibrosis and tissue damage, thereby exhibiting excellent prevention and therapeutic effects against fibrosis.

Abstract: A magnetic tunnel junction device includes a pinned magnetic layer, a free magnetic layer, and a tunnel barrier layer between the pinned and free magnetic layers. The free magnetic layer includes a first free layer, a second free layer spaced apart from the tunnel barrier layer with the first free layer therebetween, and a spacer layer between the first free layer and the second free layer. The first free layer and the second free layer are antiferromagnetically coupled to each other by the spacer layer, and each of the first free layer and the second free layer has a magnetization direction substantially perpendicular to an interface between the free magnetic layer and the tunnel barrier layer. A thermal stability of the free magnetic layer is in a range of 0 to 15.

Abstract: A flexible battery may include: a first electrode assembly including one or more unit cells, each having a pair of electrodes with a separator interposed therebetween; a single electrode; and a second electrode assembly connected to the first electrode assembly or to the single electrode and including a single electrode and a separator covering a top and bottom of the single electrode of the second electrode assembly.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: A flexible battery may include: an electrode assembly having one or more unit cells each of the unit cells including a pair of electrode plates having different polarities, a separator interposed between the respective electrode plates and electrode tabs that protrude from the respective electrode plates; a pair of electrode leads connected to electrode tabs; and a strengthening tab fixed on any one electrode lead connection tab among the electrode tabs.

Abstract: A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines.

Abstract: A flexible battery may include: an electrode assembly having one or more unit cells each of the unit cells including a pair of electrode plates having different polarities, a separator interposed between the respective electrode plates and electrode tabs that protrude from the respective electrode plates; a pair of electrode leads connected to electrode tabs; and a strengthening tab fixed on any one electrode lead connection tab among the electrode tabs.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.