Patents by Inventor Kwang-Seok Kim

Kwang-Seok Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210130373
    Abstract: Disclosed are a compound represented by Chemical Formula 1, a film, a photoelectric diode, an organic sensor, and an electronic device. In Chemical Formula 1, Ar1 and Ar2, Z, L1, L2, and R1 to R6 are the same as defined in the detailed description.
    Type: Application
    Filed: June 23, 2020
    Publication date: May 6, 2021
    Inventors: Bum Woo PARK, Hwang Suk KIM, Youngchun KWON, Dongseon LEE, Dong-Seok LEEM, Ohkyu KWON, Kwang Hee LEE, Younsuk CHOI, Hyesung CHOI
  • Publication number: 20210135039
    Abstract: A method of manufacturing a photo sensor includes forming a first conductive layer on a substrate, the first conductive layer including a metal layer and a transparent conductive oxide layer formed on the metal layer, forming a photoconductive layer on the first conductive layer, forming a second conductive layer on the photoconductive layer, forming a first photoresist pattern on the second conductive layer, etching the second conductive layer using the first photoresist pattern as an etch mask to form a second electrode, deforming the first photoresist pattern to form a second photoresist pattern, and etching the photoconductive layer and the first conductive layer using the second photoresist pattern to form a photoconductive pattern and a first electrode, respectively.
    Type: Application
    Filed: May 29, 2020
    Publication date: May 6, 2021
    Inventors: WOO-SEOK JEON, KWANG HYUN KIM, HEON SIK HA
  • Publication number: 20210104661
    Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.
    Type: Application
    Filed: June 15, 2020
    Publication date: April 8, 2021
    Inventors: Sung Chul Lee, Kwang Seok Kim, Jangeun Lee, Ung Hwan Pi
  • Publication number: 20200350774
    Abstract: A supplemental charger capable of being combined with a wearable device includes a main body including a strap having opposing ends that are extendable in opposite directions and connectable to each other, coupling parts configured to couple the wearable device to the main body, wherein at least one coupling part is attached to a respective one of the opposing ends of the strap; and a charging unit to charge the wearable device when the wearable device is coupled to the main body.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Inventors: Joo Seong KIM, Jin Hong HA, Kwang Seok KIM, Mi Hee KIM, Gil Ju LEE, Sang Yoon KIM, Keum Bong HAN
  • Publication number: 20200251650
    Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.
    Type: Application
    Filed: November 15, 2019
    Publication date: August 6, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kwang Seok KIM, Young Man Jang, Ung Hwan PI
  • Publication number: 20200235436
    Abstract: A flexible battery may include: a first electrode assembly including one or more unit cells, each having a pair of electrodes with a separator interposed therebetween; a single electrode; and a second electrode assembly connected to the first electrode assembly or to the single electrode and including a single electrode and a separator covering a top and bottom of the single electrode of the second electrode assembly.
    Type: Application
    Filed: November 25, 2019
    Publication date: July 23, 2020
    Inventors: Joo Seong KIM, Jin Hong HA, Kwang Seok KIM, Gil Ju LEE, Keum Bong HAN, Jae Sung CHOI, Joon Sik CHUNG, Hyuk Sang JO
  • Publication number: 20200014016
    Abstract: A flexible battery may include: an electrode assembly having one or more unit cells each of the unit cells including a pair of electrode plates having different polarities, a separator interposed between the respective electrode plates and electrode tabs that protrude from the respective electrode plates; a pair of electrode leads connected to electrode tabs; and a strengthening tab fixed on any one electrode lead connection tab among the electrode tabs.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Inventors: Joo Seong KIM, Jin Hong HA, Kwang Seok KIM, Gil Ju LEE, Keum Bong HAN, Jae Sung CHOI, Joon Sik CHUNG, Hyuk Sang JO
  • Publication number: 20190254741
    Abstract: The present disclosure relates to a stent delivery system, and can be configured to include a connector portion connected to an external current source, an electrocautery tip connected to the connector portion by a conductive line, and a delivery portion having one side connected to the electrocautery tip, having the other side connected to the connector portion, and having the conductive line for connecting the electrocautery tip and the connector portion positioned therein, and a stent space portion in which a stent is positioned is formed adjacent to the electrocautery tip inside the delivery portion, and the delivery portion gradually moves and supplies the stent into the human body tissue, and according to the present disclosure, it is possible to integrate the conductive line and the tube, thereby improving the rigidity of the tube, and varying the size of the electrocautery tip.
    Type: Application
    Filed: November 14, 2017
    Publication date: August 22, 2019
    Inventors: Kyong Min Shin, Kwang Seok Kim, Se Ik Park, Seong Wook Park
  • Publication number: 20190059994
    Abstract: The present disclosure relates to a stent delivery system. According to the present disclosure, it is possible to minimize the current flow distance in the in-body by integrally conducting two poles to the electrocautery tip, thus enhancing the treatment stability.
    Type: Application
    Filed: February 3, 2017
    Publication date: February 28, 2019
    Inventors: Kyong Min SHIN, Se Ik PARK, Kwang Seok KIM
  • Patent number: 10134713
    Abstract: A semiconductor package includes a printed circuit board, a resistor circuit, and first and second semiconductor chips. First and second pads are on a first surface of the printed circuit board, and external connection terminal is on a second surface of the printed circuit board. The resistor circuit has a first connection terminal connected to the first pad and a second connection terminal connected to the second pad. The first semiconductor chip is connected to the first pad and the second semiconductor chip is stacked on the first semiconductor chip and connected to the second pad. The printed circuit board includes a signal transfer line connecting a branch in the printed circuit board to the external connection terminal. A first transfer line connects the branch to the first pad. A second transfer line connects the branch to the second pad.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: November 20, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-seok Kim, Sun-won Kang, Il-joon Kim
  • Patent number: 10128433
    Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: November 13, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ung-hwan Pi, Kwang-seok Kim, Kee-won Kim, Sung-chul Lee, Young-man Jang
  • Patent number: 10096650
    Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: October 9, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-Seok Kim, Kee-Won Kim, Whan-Kyun Kim, Sang-Hwan Park, Young-Man Jang
  • Publication number: 20180145054
    Abstract: A semiconductor package includes a printed circuit board, a resistor circuit, and first and second semiconductor chips. First and second pads are on a first surface of the printed circuit board, and external connection terminal is on a second surface of the printed circuit board. The resistor circuit has a first connection terminal connected to the first pad and a second connection terminal connected to the second pad. The first semiconductor chip is connected to the first pad and the second semiconductor chip is stacked on the first semiconductor chip and connected to the second pad. The printed circuit board includes a signal transfer line connecting a branch in the printed circuit board to the external connection terminal. A first transfer line connects the branch to the first pad. A second transfer line connects the branch to the second pad.
    Type: Application
    Filed: November 16, 2017
    Publication date: May 24, 2018
    Inventors: Kwang-seok KIM, Sun-won KANG, IL-joon KIM
  • Publication number: 20180083067
    Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.
    Type: Application
    Filed: November 28, 2017
    Publication date: March 22, 2018
    Inventors: Kwang-Seok KIM, Kee-Won KIM, Whan-Kyun KIM, Sang-Hwan PARK, Young-Man JANG
  • Publication number: 20180067755
    Abstract: An electronic device and an operating method are provided. The electronic device includes a display and a processor. The processor may be configured to display a first-mode launch screen for an application on the display based on an application launching request in a state where a lock function is set, switch the first-mode launch screen displayed on the display to a second-mode launch screen of the application based on a mode switching request, and determine whether to proceed with an authentication operation based on an operation selected from the second-mode launch screen.
    Type: Application
    Filed: September 7, 2017
    Publication date: March 8, 2018
    Inventors: Injong RHEE, Kwang-Seok KIM, Joonwon PARK, Yongseok PARK, Hyo-Jin JUNG, Sungju PARK
  • Patent number: 9837468
    Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: December 5, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-Seok Kim, Kee-Won Kim, Whan-Kyun Kim, Sang-Hwan Park, Young-Man Jang
  • Patent number: 9634238
    Abstract: Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: April 25, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-seok Kim, Sung-chul Lee
  • Publication number: 20170110508
    Abstract: A magnetoresistive random access memory device includes a free layer, a tunnel barrier layer, an insulation barrier layer, a pinned layer, and a vertical polarizer structure. The tunnel barrier layer and the insulation barrier layer directly contacts different surfaces of the free layer. The pinned layer structure contacts the tunnel barrier layer and includes at least one pinned layer. The vertical polarizer structure contacts the insulation barrier layer and includes a plurality of magnetization multi-layered structures sequentially stacked. Each magnetization multi-layered structure includes a non-magnetic layer and a magnetic layer sequentially stacked. The pinned layer and the magnetic layer have magnetization directions anti-parallel to each other.
    Type: Application
    Filed: July 6, 2016
    Publication date: April 20, 2017
    Inventors: Kwang-Seok KIM, Kee-Won KIM, Whan-Kyun KIM, Sang-Hwan PARK, Young-Man JANG
  • Patent number: 9570675
    Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: February 14, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kee-won Kim, Kwang-seok Kim, Sung-chul Lee, Young-man Jang, Ung-hwan Pi
  • Publication number: 20170040529
    Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
    Type: Application
    Filed: October 24, 2016
    Publication date: February 9, 2017
    Inventors: Ung-hwan PI, Kwang-seok KIM, Kee-won KIM, Sung-chul LEE, Young-man JANG