Patents by Inventor Kwang-Youb Heo

Kwang-Youb Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10410874
    Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: September 10, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Beom Jin Yoo, Sang Ki Nam, Kwang-Youb Heo, Jehun Woo, Sang-Heon Lee, Masahiko Tomita, Vasily Pashkovskiy
  • Publication number: 20190035606
    Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.
    Type: Application
    Filed: January 10, 2018
    Publication date: January 31, 2019
    Inventors: Beom Jin Yoo, Sang Ki Nam, Kwang-Youb Heo, Jehun Woo, Sang-Heon Lee, Masahiko Tomita, Vasily Pashkovskiy