Abstract: A device for printing a QR code comprises: at least one processor; and at least one memory in which instructions are stored, the instructions, when executed by the at least one processor, causing the at least one processor to perform an operation, wherein the at least one processor receives QR data from a server, generates a first QR image on the basis of the QR data, performs image-conversion processing for the first QR image to generate a second QR image, stores the second QR image in the memory, and prints the second QR image stored in the memory on a curved body.

Abstract: A device for printing a QR code comprises: at least one processor; and at least one memory in which instructions are stored, the instructions, when executed by the at least one processor, causing the at least one processor to perform an operation, wherein the at least one processor receives QR data from a server, generates a first QR image on the basis of the QR data, performs image-conversion processing for the first QR image to generate a second QR image, stores the second QR image in the memory, and prints the second QR image stored in the memory on a curved body.

Abstract: A method of fabricating a semiconductor device includes forming an inter-metal dielectric layer including a first trench and a second trench which are spaced from each other on a substrate, forming a first dielectric layer along the sides and bottom of the first trench, forming a second dielectric layer along the sides and bottom of the second trench, forming first and second lower conductive layers on the first and second dielectric layers, respectively, forming first and second capping layers on the first and second lower conductive layer, respectively, performing a heat treatment after the first and second capping layers have been formed, removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment, and forming first and second metal gate structures on the first and second dielectric layers, respectively.

Abstract: A method of fabricating a semiconductor device includes forming an inter-metal dielectric layer including a first trench and a second trench which are spaced from each other on a substrate, forming a first dielectric layer along the sides and bottom of the first trench, forming a second dielectric layer along the sides and bottom of the second trench, forming first and second lower conductive layers on the first and second dielectric layers, respectively, forming first and second capping layers on the first and second lower conductive layer, respectively, performing a heat treatment after the first and second capping layers have been formed, removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment, and forming first and second metal gate structures on the first and second dielectric layers, respectively.

Abstract: A chemical bath of an overflow-type includes an inner bath which includes a plurality of holes on its sidewalls. The holes are formed in such a manner that they are spaced apart from the upper end of the inner bath at a predetermined distance. In this chemical bath, the chemical in the inner bath flows over the upper end of the inner bath into the outer bath and is simultaneously is discharged to the outer bath through the holes. Accordingly, unless either of the opposed sidewalls slopes lower than another by over a predetermined value, the chemical can flow continuously at nearly the same rate at both sidewalls of the inner bath. This reduces the difference of the etching rate between the respective wafers caused by the difference of the position of the wafers immersed in the chemical in the inner bath and leads to an improvement in the reliability of the etching process.

Abstract: A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.

Abstract: A windshield wiper for automobiles is disclosed. The wiper allows the wind to smoothly pass through the wiper frame while reducing wind resistance, thereby being stably kept on the windshield. The wiper has a spoiler part and a vent opening at both side portions of the frame's top wall, thus being free from any interference between a wiper arm and the wiper frame while mounting the wiper arm to the wiper frame. Both the spoiler part and the vent openings are individually formed by cutting the frame's top wall from corner to corner, thus being free from any corner causing a vortex of air. The frame's upper side wall has a width of less than that of the lower side wall, thus forming a gap helping to keep the wiper on the windshield. A reinforcing rib is formed between the spoiler parts and a reinforcing rib is also formed between the vent openings, thereby improving the strength of the wiper frame.

Abstract: A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.