Patents by Inventor Kyeong Seung KANG

Kyeong Seung KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11114163
    Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: September 7, 2021
    Assignee: SK hynix Inc.
    Inventors: Hee Joung Park, Kyeong Seung Kang, Won Chul Shin
  • Publication number: 20200294596
    Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
    Type: Application
    Filed: June 3, 2020
    Publication date: September 17, 2020
    Applicant: SK hynix Inc.
    Inventors: Hee Joung PARK, Kyeong Seung KANG, Won Chul SHIN
  • Publication number: 20200294597
    Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
    Type: Application
    Filed: June 3, 2020
    Publication date: September 17, 2020
    Applicant: SK hynix Inc.
    Inventors: Hee Joung PARK, Kyeong Seung KANG, Won Chul SHIN
  • Patent number: 10706929
    Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: July 7, 2020
    Assignee: SK hynix Inc.
    Inventors: Hee Joung Park, Kyeong Seung Kang, Won Chul Shin
  • Patent number: 10304544
    Abstract: A memory device includes a plurality of memory cells, bit lines connected to the plurality of memory cells, and page buffers coupled to the plurality of memory cells through the bit lines, and performing a read operation on the plurality of memory cells, wherein each of the page buffers comprises: a first latch controlling a bit line precharge operation during the read operation; and a second latch storing a result of a first sensing operation and a result of a second sensing operation performed after the first sensing operation, wherein a value stored in the second latch is inverted when the result of the first sensing operation and the result of second sensing operation are different from each other during the second sensing operation.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: May 28, 2019
    Assignee: SK hynix Inc.
    Inventors: Hee Joung Park, Kyeong Seung Kang, Won Chul Shin, Dong Hyuk Chae
  • Publication number: 20190043584
    Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.
    Type: Application
    Filed: March 23, 2018
    Publication date: February 7, 2019
    Applicant: SK hynix Inc.
    Inventors: Hee Joung PARK, Kyeong Seung KANG, Won Chul SHIN
  • Publication number: 20180322929
    Abstract: A memory device includes a plurality of memory cells, bit lines connected to the plurality of memory cells, and page buffers coupled to the plurality of memory cells through the bit lines, and performing a read operation on the plurality of memory cells, wherein each of the page buffers comprises: a first latch controlling a bit line precharge operation during the read operation; and a second latch storing a result of a first sensing operation and a result of a second sensing operation performed after the first sensing operation, wherein a value stored in the second latch is inverted when the result of the first sensing operation and the result of second sensing operation are different from each other during the second sensing operation.
    Type: Application
    Filed: December 8, 2017
    Publication date: November 8, 2018
    Inventors: Hee Joung PARK, Kyeong Seung KANG, Won Chul SHIN, Dong Hyuk CHAE