Abstract: Filter modules having a wider passband are provided herein. In certain embodiments, the filter module comprises an input node; an output node; a filter disposed along a signal path extending from the input node to the output node; a strip line configured to generate an inductance between the filter and a ground such to increase a bandwidth of a passband of the filter module, the single strip line disposed on multiple layers, each of the multiple layers defined by a plurality of pulse-shaped) portions of the strip line disposed on a plane.

Abstract: A decrease in energy density of a battery is suppressed, and the occurrence of internal short circuit between a positive plate and a negative plate located at the innermost circumference of a curved portion of a flat electrode assembly, where the curvature of the curved portion is greatest, is suppressed. In a nonaqueous electrolyte secondary battery including a flat wound electrode assembly (14), the electrode assembly (14) has a pair of curved portions (20A, 20B) located at either end and a flat portion (21) located between the pair of curved portions. In at least one of the curved portions, at least two layers of a second electrode plate are disposed on an inner side of a curved portion of a first electrode plate located at an innermost circumference.

Abstract: Provided is a method for producing a gas barrier paper packaging material which can impart sufficient gas barrier properties even when a barrier coating agent for forming a barrier layer is applied in a dry amount of 2 g/m2 or less. The method for producing a gas barrier paper packaging material at least includes: a barrier layer forming step of applying a barrier coating agent to one side of a sealant film to form a barrier layer; and a lamination step of laminating the barrier layer and a paper substrate layer via an adhesive layer.

Abstract: A sensor apparatus includes: an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting section including a reaction section having an immobilization film to detect an analyte; a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film located on the upper surface of the element substrate so as to cover the first IDT electrode, the second IDT electrode, and at least part of the immobilization film, the protective film extending between and contacting with the immobilization film and at least one of the first IDT electrode and the second IDT electrode.

Abstract: A surface acoustic wave (SAW) filter package comprises a substrate, one or more trenches formed in the substrate, a SAW filter formed in each trench of the one or more trenches, and a cavity forming layer extending horizontally across the substrate and each trench.

Abstract: Filter modules having a wider passband are provided herein. In certain embodiments, the filter module comprises an input node; an output node; a filter disposed along a signal path extending from the input node to the output node; a strip line configured to generate an inductance between the filter and a ground such to increase a bandwidth of a passband of the filter module, the single strip line disposed on multiple layers, each of the multiple layers defined by a plurality of pulse-shaped) portions of the strip line disposed on a plane.

Abstract: A sensor apparatus capable of measuring an analyte with excellent sensitivity is provided. A sensor apparatus includes an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting element including a reaction section having an immobilization film to detect an analyte, a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film which covers the first IDT electrode and the second IDT electrode. The element substrate is configured so that a region where the reaction section is located is at a lower level than a region where the first IDT electrode is located and a region where the second IDT electrode is located.

Abstract: A filter module for multiple carrier aggregation includes a substrate, a first filter and a second filter disposed on a first side of the substrate, and a metallic ground trace substantially bisecting the surface of the substrate into first and second substrate sections, such that the first filter is disposed on the first substrate section and the second filter is disposed on the second substrate section and a method of improving cross isolation in a multiple carrier aggregation filter module including a first filter disposed on a substrate for passing a first LTE band and a second filter disposed on the substrate for passing a second LTE band having a neighboring frequency to the first LTE band, the method including bisecting the substrate with a metallic trace such that the first filter is on a different section of the substrate to the second filter.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode includes a first layer having a first thickness and a second layer having a second thickness. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The first layer is positioned between the piezoelectric layer and the second layer. The first thickness is configured such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response resonance.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode including a first layer and a second layer. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The second layer is positioned between the piezoelectric layer and the first layer such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response.

Abstract: A low velocity surface acoustic wave device, and a method of reducing the velocity of a surface acoustic wave generated by a surface acoustic wave device are described, the device including a piezoelectric layer, an interdigital transducer disposed on the piezoelectric substrate and configured to generate a surface acoustic wave in response to an electrical, and a temperature coefficient of frequency compensation layer disposed partially on the interdigital transducer and partially on the piezoelectric substrate, the temperature coefficient of frequency compensation layer having a low velocity layer disposed within it configured to reduce the velocity of a surface acoustic wave generated by the interdigital transducer, the method including disposing a wave velocity adjustment layer, the wave velocity adjustment layer being a low velocity layer, within a temperature compensation layer of the surface acoustic wave device.

Abstract: A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on a front side of the carrier substrate, and a layer of piezoelectric material disposed on a front side of the layer of the first dielectric material, the piezoelectric material having a cut angle ? of from about 12 degrees to about 25 degrees to suppress bulk leakage and improve gamma, and interdigital transducer electrodes disposed on a front side of the layer of piezoelectric material.

Abstract: Embodiments of the invention relate to a surface acoustic wave device including a piezoelectric substrate, an interdigital transducer electrode on the piezoelectric substrate and a first thermally conductive layer arranged over the piezoelectric substrate and interdigital transducer electrode. The first thermally conductive layer is spaced apart from the piezoelectric substrate and interdigital transducer electrode. The surface acoustic wave device also includes a second thermally conductive layer configured to dissipate heat generated by the surface acoustic wave device. The second thermally conductive layer is arranged on an opposing side of the piezoelectric substrate to the interdigital transducer electrode. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

Abstract: The invention provides: a gas sensor device that is capable of removing a component adsorbed on a gas sensor by relatively simple means and easily restoring a signal baseline of the gas sensor to a constant state; and a method for removing a gas component. The gas sensor device according to an embodiment of the invention includes a gas sensor and cleaning means that contains a liquid for cleaning the gas sensor. The gas sensor includes a sensor main body that is capable of detecting a characteristic parameter of a component present in a gas phase or a liquid phase, and a sensitive membrane that is coated on a surface of the sensor main body and is durable against the liquid.

Abstract: A decrease in energy density of a battery is suppressed, and the occurrence of internal short circuit between a positive plate and a negative plate located at the innermost circumference of a curved portion of a flat electrode assembly, where the curvature of the curved portion is greatest, is suppressed. In a nonaqueous electrolyte secondary battery including a flat wound electrode assembly (14), the electrode assembly (14) has a pair of curved portions (20A, 20B) located at either end and a flat portion (21) located between the pair of curved portions. In at least one of the curved portions, at least two layers of a second electrode plate are disposed on an inner side of a curved portion of a first electrode plate located at an innermost circumference.

Abstract: A battery pack includes a battery unit including rectangular secondary batteries, each including a sealing plate and positive and negative electrode terminals attached to the sealing plate; a bus bar that connects the rectangular secondary batteries together in parallel; an insulating plate disposed between the sealing plates of the rectangular secondary batteries and the bus bar; and a short-circuit breaking portion that interrupts an electric conduction path between the rectangular secondary batteries connected in parallel by allowing each sealing plate to bulge outward in response to an internal pressure rise of the battery to push up the insulating plate and the bus bar. A portion of each sealing plate that bulges most protrudes outward by greater than or equal to 1.5 mm from an outer peripheral edge of the sealing plate when a pressure in the corresponding rectangular secondary battery reaches the operating pressure of a gas release valve.

Abstract: A solid electrolytic capacitor includes a capacitor element. The capacitor element includes an anode foil, a dielectric layer, a solid electrolyte layer, and a cathode lead-out layer. The anode foil includes a first part and a second part other than the first part. The first part has an etched surface, and a second part has an unetched surface. The dielectric layer is formed on the etched surface of the first part in the anode foil. The solid electrolyte layer is formed on at least a part of a surface of the dielectric layer. The cathode lead-out layer is formed on at least a part of a surface of the solid electrolyte layer. An insulating protective layer covers a boundary part between the first part and the second part as well as an end of the cathode lead-out layer and an end of the solid electrolyte layer.

Abstract: A sensor apparatus includes: an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting section including a reaction section having an immobilization film to detect an analyte; a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film located on the upper surface of the element substrate so as to cover the first IDT electrode, the second IDT electrode, and at least part of the immobilization film, the protective film extending between and contacting with the immobilization film and at least one of the first IDT electrode and the second IDT electrode.

Abstract: A sensor apparatus includes: an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting section including a reaction section having an immobilization film to detect an analyte; a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film located on the upper surface of the element substrate so as to cover the first IDT electrode, the second IDT electrode, and at least part of the immobilization film, the protective film extending between and contacting with the immobilization film and at least one of the first IDT electrode and the second IDT electrode.

Abstract: A stress sensor comprises: a diaphragm; an intermediate layer disposed on a surface of the diaphragm; a sensitive membrane disposed on the intermediate layer; and a piezoresistive element disposed in a region of the diaphragm in contact with an outer edge of the intermediate layer.