Patents by Inventor Kyo-Jin Choo
Kyo-Jin Choo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Image sensor, method for manufacturing the same, and image processing device having the image sensor
Patent number: 9954034Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: GrantFiled: June 22, 2017Date of Patent: April 24, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung Won Lee, Sang Chul Sul, Hirosige Goto, Sae Young Kim, Gwi Deok Ryan Lee, Masaru Ishii, Kyo Jin Choo -
Image sensor, method for manufacturing the same, and image processing device having the image sensor
Patent number: 9905615Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: GrantFiled: August 10, 2016Date of Patent: February 27, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung Won Lee, Sang Chul Sul, Hirosige Goto, Sae Young Kim, Gwi Deok Ryan Lee, Masaru Ishii, Kyo Jin Choo -
IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR
Publication number: 20170294487Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: ApplicationFiled: June 22, 2017Publication date: October 12, 2017Inventors: MYUNG WON LEE, Sang Chul Sul, Hirosige Goto, Sae Young Kim, Gwi Deok Ryan Lee, Masaru Ishii, Kyo Jin Choo -
Patent number: 9673258Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.Type: GrantFiled: August 22, 2014Date of Patent: June 6, 2017Assignee: Samsung ElectronicsInventors: Kyo Jin Choo, Hirosige Goto, Kyu Sik Kim, Yun Kyung Kim, Kyung Bae Park, Jin Ho Seo, Sang Chul Sul, Kyung Ho Lee, Kwang-hee Lee
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Patent number: 9554073Abstract: An integrated circuit comprises a first signal transfer block comprising first through (M)-th aligning blocks that are cascade-coupled to produce first aligned control signals through (M)-th aligned control signals, respectively, by aligning first control signals with a clock signal, wherein M is an integer greater than one, and a functional block divided into first through (M)-th sub-functional blocks configured to perform a same function in parallel, each of the first through (M)-th sub-functional blocks operating according to corresponding ones of the first aligned control signals through (M)-th aligned control signals generated by the first through (M)-th aligning blocks.Type: GrantFiled: September 17, 2014Date of Patent: January 24, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Young Jin, Kyo-Jin Choo, Yu-Jin Park, Han-Kook Cho
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IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR
Publication number: 20160351630Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: ApplicationFiled: August 10, 2016Publication date: December 1, 2016Inventors: MYUNG WON LEE, SANG CHUL SUL, HIROSIGE GOTO, SAE YOUNG KIM, GWI DEOK RYAN LEE, MASARU ISHII, KYO JIN CHOO -
IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR
Publication number: 20160142630Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: ApplicationFiled: January 22, 2016Publication date: May 19, 2016Inventors: MYUNG WON LEE, SANG CHUL SUL, HIROSIGE GOTO, SAE YOUNG KIM, GWI DEOK RYAN LEE, MASARU ISHll, KYO JIN CHOO -
Patent number: 9294703Abstract: A data transmission circuit of an image sensor includes first to Kth bus segments, and first to Kth data regeneration circuits respectively connected to the first to Kth bus segments and the first to (K?1)th data regeneration circuits respectively connected to the second to Kth bus segments. Each of the first to Kth data regeneration circuits may be embodied as one of a buffer, a logic gate, and a synchronous circuit operating in response to a clock signal.Type: GrantFiled: December 3, 2013Date of Patent: March 22, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyo Jin Choo, Eun Young Jin
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Image sensor, method for manufacturing the same, and image processing device having the image sensor
Patent number: 9287327Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: GrantFiled: June 20, 2014Date of Patent: March 15, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung Won Lee, Sang Chul Sul, Hirosige Goto, Sae Young Kim, Gwi Deok Ryan Lee, Masaru Ishii, Kyo Jin Choo -
Patent number: 9282264Abstract: One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.Type: GrantFiled: June 12, 2014Date of Patent: March 8, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Yu Jin Park, Han Yang, Sin-Hwan Lim, Kyo Jin Choo, Seog Heon Ham
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Patent number: 9191599Abstract: A correlated double sampling (CDS) circuit included in an image sensor includes a sampling unit and a timing controlled band-limitation (TCBL) unit. The sampling unit is configured to generate an output signal by performing a CDS operation with respect to a reset component of an input signal and an image component of the input signal based on a ramp signal, the input signal being provided from a pixel array included in the image sensor. The TCBL unit is connected to the sampling unit, and is configured to remove noise from the output signal based on a timing control signal. The timing control signal is activated during a first comparison duration, in which a first comparison operation is performed with respect to the ramp signal and the reset component of the input signal, and during a second comparison duration, in which a second comparison operation is performed with respect to the ramp signal and the image component of the input signal.Type: GrantFiled: February 27, 2013Date of Patent: November 17, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Yu-Jin Park, Kyo-Jin Choo, Ji-Hun Shin, Ji-Min Cheon, Jin-Ho Seo, Seog-Heon Ham
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Publication number: 20150076324Abstract: An integrated circuit comprises a first signal transfer block comprising first through (M)-th aligning blocks that are cascade-coupled to produce first aligned control signals through (M)-th aligned control signals, respectively, by aligning first control signals with a clock signal, wherein M is an integer greater than one, and a functional block divided into first through (M)-th sub-functional blocks configured to perform a same function in parallel, each of the first through (M)-th sub-functional blocks operating according to corresponding ones of the first aligned control signals through (M)-th aligned control signals generated by the first through (M)-th aligning blocks.Type: ApplicationFiled: September 17, 2014Publication date: March 19, 2015Inventors: EUN-YOUNG JIN, KYO-JIN CHOO, YU-JIN PARK, HAN-KOOK CHO
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Publication number: 20150054995Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.Type: ApplicationFiled: August 22, 2014Publication date: February 26, 2015Inventors: Kyo Jin CHOO, Hirosige GOTO, Kyu Sik KIM, Yun Kyung KIM, Kyung Bae PARK, Jin Ho SEO, Sang Chul SUL, Kyung Ho LEE, Kwang-hee LEE
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IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR
Publication number: 20140375826Abstract: An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.Type: ApplicationFiled: June 20, 2014Publication date: December 25, 2014Inventors: Myung Won Lee, Sang Chul Sul, Hirosige Goto, Sae Young Kim, Gwi Deck Ryan Lee, Masaru Ishii, Kyo Jin Choo -
Patent number: 8866060Abstract: A temperature sensor includes a band gap reference (BGR) circuit, a voltage generation unit and a digital CDS circuit. The band gap reference (BGR) circuit generates a reference voltage proportional to a temperature. The voltage generation unit generates a first voltage and a second voltage based on the reference voltage, where the first voltage and the second voltage are proportional to the temperature. The digital CDS circuit generates a digital signal corresponding to the temperature by performing a digital correlated double sampling (CDS) operation on the first voltage and the second voltage. The temperature sensor is able to detect a temperature accurately.Type: GrantFiled: September 23, 2011Date of Patent: October 21, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Min-Ho Kwon, Sin-Hwan Lim, Jin-Ho Seo, Ju-Hyun Ko, Young-Tae Jang, Kyo-Jin Choo
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Publication number: 20140293106Abstract: One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.Type: ApplicationFiled: June 12, 2014Publication date: October 2, 2014Inventors: Yu Jin PARK, Han YANG, Sin-Hwan LIM, Kyo Jin CHOO, Seog Heon HAM
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Patent number: 8836839Abstract: Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.Type: GrantFiled: October 12, 2012Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Kyo Jin Choo, Hirosige Goto, Kyu Sik Kim, Yun Kyung Kim, Kyung Bae Park, Jin Ho Seo, Sang Chul Sul, Kyung Ho Lee, Kwang Hee Lee
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Patent number: 8797063Abstract: A data transmission device includes a control unit and a delay chain unit. The control unit outputs a first control signal through an nth control signal, where n is a natural number. The delay chain unit includes a first switching element through an nth switching element. The switching elements receive a first data signal through an nth data signal and perform pipelining operations on the first through nth data signals based upon the first through nth control signals, respectively, to output the pipelined data signals as at least one data stream. The switching elements are connected to each other to form at least one data delay chain.Type: GrantFiled: July 11, 2011Date of Patent: August 5, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Kyo-Jin Choo, Yu-Jin Park, Yong Lim
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Patent number: 8773191Abstract: One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.Type: GrantFiled: November 6, 2012Date of Patent: July 8, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Yu Jin Park, Han Yang, Sin-Hwan Lim, Kyo Jin Choo, Seog Heon Ham
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Publication number: 20140151534Abstract: A data transmission circuit of an image sensor includes first to Kth bus segments, and first to Kth data regeneration circuits respectively connected to the first to Kth bus segments and the first to (K-1)th data regeneration circuits respectively connected to the second to Kth bus segments. Each of the first to Kth data regeneration circuits may be embodied as one of a buffer, a logic gate, and a synchronous circuit operating in response to a clock signal.Type: ApplicationFiled: December 3, 2013Publication date: June 5, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Kyo Jin CHOO, Eun Young JIN