Patents by Inventor Kyoo-Ho JUNG
Kyoo-Ho JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230402500Abstract: A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxide of the first metal element, and a first metal oxide film. The first metal oxide film includes an oxide of the first metal element and is free of the second metal element. The upper electrode includes an upper electrode film including the first metal element, a second doped oxide film including the second metal element and an oxide of the first metal element, and a second metal oxide film that includes an oxide of the first metal element, and is free of the second metal element.Type: ApplicationFiled: February 8, 2023Publication date: December 14, 2023Inventors: Cheol Jin CHO, Young-Lim PARK, Kyoo Ho JUNG
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Publication number: 20230361161Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: ApplicationFiled: July 6, 2023Publication date: November 9, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Han Jin LIM, Ki Nam KIM, Hyung Suk JUNG, Kyoo Ho JUNG, Ki Hyun HWANG
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Patent number: 11728372Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: GrantFiled: April 6, 2022Date of Patent: August 15, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
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Patent number: 11705483Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.Type: GrantFiled: July 2, 2021Date of Patent: July 18, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Sun Kim, Sang-Yeol Kang, Kyoo-Ho Jung, Kyu-Ho Cho, Hyo-Sik Mun
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Publication number: 20230008127Abstract: A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).Type: ApplicationFiled: January 3, 2022Publication date: January 12, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Kyoo Ho JUNG, Sang Yeol KANG, Su Hwan KIM, Dong Kwan BAEK, Yu Kyung SHIN, Won Sik CHOI
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Patent number: 11527604Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: GrantFiled: June 9, 2021Date of Patent: December 13, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
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Publication number: 20220238641Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.Type: ApplicationFiled: August 26, 2021Publication date: July 28, 2022Inventors: Jung Min Park, Han Jin Lim, Kyoo Ho Jung, Cheol Jin Cho
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Publication number: 20220231117Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: ApplicationFiled: April 6, 2022Publication date: July 21, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Han Jin LIM, Ki Nam KIM, Hyung Suk JUNG, Kyoo Ho JUNG, Ki Hyun HWANG
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Patent number: 11322578Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: GrantFiled: October 2, 2019Date of Patent: May 3, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
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Publication number: 20210343832Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.Type: ApplicationFiled: July 2, 2021Publication date: November 4, 2021Inventors: EUN-SUN KIM, SANG-YEOL KANG, KYOO-HO JUNG, KYU-HO CHO, HYO-SIK MUN
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Publication number: 20210296429Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: ApplicationFiled: June 9, 2021Publication date: September 23, 2021Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
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Patent number: 11088240Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.Type: GrantFiled: June 18, 2019Date of Patent: August 10, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Sun Kim, Sang-Yeol Kang, Kyoo-Ho Jung, Kyu-Ho Cho, Hyo-Sik Mun
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Patent number: 11069768Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: GrantFiled: February 4, 2020Date of Patent: July 20, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
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Publication number: 20200403062Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.Type: ApplicationFiled: February 4, 2020Publication date: December 24, 2020Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
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Publication number: 20200286985Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.Type: ApplicationFiled: October 2, 2019Publication date: September 10, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
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Publication number: 20200127079Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.Type: ApplicationFiled: June 18, 2019Publication date: April 23, 2020Inventors: EUN-SUN KIM, SANG-YEOL KANG, KYOO-HO JUNG, KYU-HO CHO, HYO-SIK MUN
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Publication number: 20200058731Abstract: A semiconductor device includes a lower electrode on a substrate, a dielectric layer structure on the lower electrode and including hafnium oxide having a tetragonal crystal phase, a template layer on the dielectric layer structure and including niobium oxide (NbOx, 0.5?x?2.5), and an upper electrode structure including a first upper electrode and a second upper electrode on the template layer.Type: ApplicationFiled: August 13, 2019Publication date: February 20, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Hyo-sik MUN, Sang-yeol KANG, Eun-sun KIM, Young-lim PARK, Kyoo-ho JUNG, Kyu-ho CHO
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Patent number: 9418008Abstract: An electronic device includes a semiconductor memory unit. The semiconductor memory unit includes a plurality of first lines extending in a first direction, a plurality of second lines extending in a second direction intersecting the first direction, and a plurality of variable resistance patterns that is positioned at intersections of the first lines and the second lines and disposed between the first lines and the second lines in a vertical direction. Each of the variable resistance patterns has an elongated shape in a plan view and a portion of each of the variable resistance patterns is disposed outside a region in which a corresponding first line and a corresponding second line overlap with each other.Type: GrantFiled: October 24, 2014Date of Patent: August 16, 2016Assignee: SK HYNIX INC.Inventors: Kyoo-Ho Jung, Byung-Jick Cho, Jong-Chul Lee, Won-Ki Ju
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Publication number: 20160005462Abstract: An electronic device includes a semiconductor memory unit. The semiconductor memory unit includes a plurality of first lines extending in a first direction, a plurality of second lines extending in a second direction intersecting the first direction, and a plurality of variable resistance patterns that is positioned at intersections of the first lines and the second lines and disposed between the first lines and the second lines in a vertical direction. Each of the variable resistance patterns has an elongated shape in a plan view and a portion of each of the variable resistance patterns is disposed outside a region in which a corresponding first line and a corresponding second line overlap with each other.Type: ApplicationFiled: October 24, 2014Publication date: January 7, 2016Inventors: Kyoo-Ho JUNG, Byung-Jick CHO, Jong-Chul LEE, Won-Ki JU