Patents by Inventor Kyoung-sub Shin
Kyoung-sub Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240047275Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Chul SUN, Myeong-Cheol KIM, Kyoung-Sub SHIN
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Patent number: 11830775Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: GrantFiled: March 18, 2022Date of Patent: November 28, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Chul Sun, Myeong-Cheol Kim, Kyoung-Sub Shin
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Publication number: 20220208616Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: ApplicationFiled: March 18, 2022Publication date: June 30, 2022Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Chul SUN, Myeong-Cheol KIM, Kyoung-Sub SHIN
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Patent number: 11302585Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: GrantFiled: March 6, 2020Date of Patent: April 12, 2022Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Chul Sun, Myeong-Cheol Kim, Kyoung-Sub Shin
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Patent number: 11020253Abstract: The present invention relates to a multi-hole stent for digestive organs, the multi-hole stent including: a body configured to form a plurality of cells through the intersection of wires and to be provided in a hollow cylindrical shape; and a film configured to be installed in contact with the inner surface of the body; wherein one or more discharge holes are formed in the film. The multi-hole stent for digestive organs is placed in a stenotic region in a biliary track, and can thus secure a discharge path by restoring a narrowed diameter. Furthermore, the film is installed on the inner surface of the body, and can thus prevent the entry of a lesion into the stent and re-stenosis attributable to the growth of the lesion and can thus provide discharge paths for body fluids generated from side branches through the discharge holes formed in the film.Type: GrantFiled: June 23, 2016Date of Patent: June 1, 2021Assignee: M.I. TECH CO., LTD.Inventors: Hun Kuk Park, Bong Seok Jang, Ho Yun, Jong Pil Moon, So Mi Ji, Kyoung Sub Shin, Makoto Kobayashi
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Publication number: 20200211907Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: ApplicationFiled: March 6, 2020Publication date: July 2, 2020Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Chul Sun, Myeong-Cheol KIM, Kyoung-Sub SHIN
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Patent number: 10615080Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: GrantFiled: September 27, 2018Date of Patent: April 7, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Chul Sun, Myeong-Cheol Kim, Kyoung-Sub Shin
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Patent number: 10410839Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.Type: GrantFiled: May 26, 2017Date of Patent: September 10, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Yil-Hyung Lee, Yoo-Chul Kong, Jong-Kyu Kim, Seok-Woo Nam, Jong-Soon Park, Kyoung-Sub Shin
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Publication number: 20190272979Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.Type: ApplicationFiled: May 16, 2019Publication date: September 5, 2019Inventors: Yil-Hyung Lee, Yoo-Chul Kong, Jong-Kyu Kim, Seok-Woo Nam, Jong-Soon Park, Kyoung-Sub Shin
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Publication number: 20190175374Abstract: The present invention relates to a multi-hole stent for digestive organs, the multi-hole stent including: a body configured to form a plurality of cells through the intersection of wires and to be provided in a hollow cylindrical shape; and a film configured to be installed in contact with the inner surface of the body; wherein one or more discharge holes are formed in the film. The multi-hole stent for digestive organs is placed in a stenotic region in a biliary track, and can thus secure a discharge path by restoring a narrowed diameter. Furthermore, the film is installed on the inner surface of the body, and can thus prevent the entry of a lesion into the stent and re-stenosis attributable to the growth of the lesion and can thus provide discharge paths for body fluids generated from side branches through the discharge holes formed in the film.Type: ApplicationFiled: June 23, 2016Publication date: June 13, 2019Applicant: M.I.TECH CO., LTD.Inventors: Hun Kuk PARK, Bong Seok JANG, Ho YUN, Jong Pil MOON, So Mi JI, Kyoung Sub SHIN, Makoto KOBAYASHI
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Patent number: 10192881Abstract: A semiconductor device includes gate stacks disposed on a substrate and spaced apart from each other in a first direction, with a separation region interposed between the gate stacks; channel regions penetrating through the gate stacks and disposed within each of the gate stacks; and a guide region adjacent to the separation region, penetrating through at least a portion of the gate stack, and having a bent portion that is bent toward the separation region.Type: GrantFiled: August 31, 2015Date of Patent: January 29, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sang Wuk Park, Hyuk Kim, Kyoung Sub Shin, Gang Zhang
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Publication number: 20190027411Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: ApplicationFiled: September 27, 2018Publication date: January 24, 2019Inventors: Min-Chul SUN, Myeong-Cheol KIM, Kyoung-Sub SHIN
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Patent number: 10109532Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: GrantFiled: July 25, 2017Date of Patent: October 23, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Min-Chul Sun, Myeong-Cheol Kim, Kyoung-Sub Shin
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Publication number: 20180254219Abstract: In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure.Type: ApplicationFiled: July 25, 2017Publication date: September 6, 2018Inventors: Min-Chul SUN, Myeong-Cheol KIM, Kyoung-Sub SHIN
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Publication number: 20180197719Abstract: In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.Type: ApplicationFiled: May 26, 2017Publication date: July 12, 2018Inventors: Yil-Hyung Lee, Yoo-Chul Kong, Jong-Kyu Kim, Seok-Woo Nam, Jong-Soon Park, Kyoung-Sub Shin
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Patent number: 9899404Abstract: Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.Type: GrantFiled: December 2, 2015Date of Patent: February 20, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-Hyuk Yoo, Dae-Hyun Jang, Yoo-Chul Kong, Kyoung-Sub Shin
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Patent number: 9806204Abstract: A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.Type: GrantFiled: November 7, 2014Date of Patent: October 31, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung-Soo Ahn, O Ik Kwon, Bum-Soo Kim, Hyun-Sung Kim, Kyoung-Sub Shin, Min-Kyung Yun, Seung-Pil Chung, Won-Bong Jung
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Patent number: 9419008Abstract: According to example embodiments, a method of fabricating a semiconductor device includes: forming a preliminary stack structure including upper and lower preliminary stack structures by alternately stacking a plurality of interlayer insulating and sacrificial layers on a cell, first pad area, dummy area and second pad area of a substrate; removing an entire portion of the upper preliminary stack structure on the second pad area; forming a first mask defining openings over parts of the first and second pad areas; etching an etch depth corresponding to ones of the plurality of interlayer insulating and sacrificial layers through a remaining part of the preliminary stack structure exposed by the first mask; and repetitively performing a first staircase forming process that includes shrinking sides of the first mask and etching the etch depth through remaining parts of the plurality of interlayer insulating and sacrificial layers exposed by the shrunken first mask.Type: GrantFiled: July 9, 2015Date of Patent: August 16, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-Ik Oh, Dae-Hyun Jang, Kyoung-Sub Shin
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Publication number: 20160233233Abstract: A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.Type: ApplicationFiled: April 21, 2016Publication date: August 11, 2016Inventors: HYUK KIM, Sang Wuk Park, Kyoung Sub Shin
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Patent number: 9385134Abstract: In a semiconductor device, parallel first and second conductive lines having a unit width extend from a memory cell region into a connection region. A trim region in the connection region includes pads respectively connected to the first and second conductive lines but are separated by a width much greater than the unit width.Type: GrantFiled: July 25, 2014Date of Patent: July 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Jae-Ho Min, Ki-Jeong Kim, Kyoung-Sub Shin, Dong-Hyun Kim