Abstract: A method and a device for estimating a position of a device by using an optical signal through converting a linearly polarized optical signal to a plurality of electric signals using a plurality of photoelectric devices, estimating a moving distance of the device from a reference position by using the plurality of electric signals, and estimating an orientation angle of the device with respect to a reference direction by using the plurality of electric signals are provided.

Abstract: A display device that may include a substrate, a driving element layer disposed on the substrate, and a light emitting element layer disposed on the driving element layer. The light emitting element layer may include a pixel defining layer including a plurality of openings defining a corresponding plurality of pixels, a first electrode disposed in each of the pixels and including a first portion covered by the pixel defining layer and a second portion extending from the first portion and corresponding to one of the openings of each of the pixels,, an intermediate layer covering the second portion of the first electrode in the openings of each of the pixels, covering the pixel defining layer between neighboring pixels, and including an electrically disconnected portion corresponding to the heating wiring.

Abstract: A display device includes: sub-pixels on a base layer, each of the sub-pixels including a light emitting element including: a first electrode; a second electrode; and a light emitting structure electrically connected between the first electrode and the second electrode; and a separator protruding in a thickness direction of the base layer between the sub-pixels, and including separator structures spaced from each other in a plan view to define a separation area. The separation area includes one or more bending areas between the sub-pixels.

Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

Abstract: A compound represented by Chemical Formula 1 is provided. The compound has a reorganization energy of less than about 0.191 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 500 nm. In Chemical Formula 1, the definition of each group is as described in the specification.

Abstract: A compound is represented by Chemical Formula 1, and at least one of X1 and X2 is a substituent having a volume ranging from about 900 bohr3 to about 3000 bohr3 (V/molecule), and a photoelectric device, an image sensor, and an electronic device includes the compound: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Abstract: Provided is a compound represented by any one of Chemical Formulas 1 to 3, and having a molecular packing density of greater than or equal to about 1.55 molecules/nm3 and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formulas 1 to 3, the definition of each substituent is as described in the specification.

Abstract: Disclosed are a display panel and an electronic device. The display panel may include a substrate, first, second, and third light emitting diodes on the substrate and configured to emit light of first, second, and third wavelength spectra in a visible light wavelength spectrum, respectively, and first, second, third organic photoelectric conversion diodes overlapping the first, second, and third light emitting diode along a thickness direction of the substrate, respectively, may be provided. Each of first, second, third organic photoelectric conversion diodes may be configured to selectively absorb a portion of the visible light wavelength spectrum and convert the absorbed light into an electrical signal.

Abstract: A sensor-embedded display panel includes a substrate, a plurality of light emitting elements on the substrate and configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and a plurality of sensors on the substrate and configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum. Each of the sensors includes a photoelectric conversion layer that includes a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of about 500 nm to about 600 nm and a thickness of the buffer layer is about 20 nm to about 50 nm, or the photoelectric conversion layer includes a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than about 750 nm and a thickness of the buffer layer is about 70 nm to about 110 nm.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Provided is a compound represented by Chemical Formula 1 and having a reorganization energy of the compound of less than about 0.163 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 495 nm, and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.

Abstract: A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Provided are a compound represented by Chemical Formula 1A or 1B and a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device including the same. Details for Chemical Formulas 1A and 1B are as described in the detailed description.

Abstract: Provided are a photoelectric device, a light absorption sensor, a sensor-embedded display panel, and an electronic device. The photoelectric device includes a first electrode and a second electrode facing each other, and a light absorbing layer between the first electrode and the second electrode, wherein the light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or any combination thereof, the light absorbing layer includes a p-type semiconductor and an n-type semiconductor, and the n-type semiconductor includes a compound represented by Chemical Formula 1. Details for Chemical Formula 1 are as described in the detailed description.

Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: A display panel may include a light emitting element including a light emitting layer and a sensor including a photosensitive layer on a substrate. The light emitting element and the sensor each may include respective portions of first and second common auxiliary layers, which may be continuous under and over the light emitting layer and the photosensitive layer. The first and second common auxiliary layers respectively may include a hole transport material and an electron transport material. The photosensitive layer may include first and second semiconductor layers close to the first and second common auxiliary layers, respectively. The first and second semiconductor layers respectively may include a p-type semiconductor and an n-type semiconductor. The second semiconductor layer may have an uneven surface facing the second common auxiliary layer and may have an average roughness (Rq) of greater than or equal to about 5 nm.

Abstract: An image sensor includes a semiconductor substrate in which a plurality of photo-sensing elements are integrated, an organic active layer on the semiconductor substrate, an interlayer between the organic active layer and the semiconductor substrate, and optionally a color filter layer on the organic active layer. The organic active layer includes a singlet fission material. The interlayer includes a dielectric selected from an oxide, a nitride, oxynitride, fluoride, oxyfluoride, and any combination thereof.