Abstract: A scroll compressor including a housing, a motor in the housing, an orbiting scroll, and a fixed scroll. An injection valve assembly is provided between the fixed scroll and the housing and further includes a cover plate, a valve plate, a gasket retainer, and an injection valve. The compressor capable of increasing a surface pressure at a position at which the injection valve of the injection valve assembly needs to be supported, and preventing deformation of the gasket retainer by reducing a bead height of the gasket retainer.

Abstract: Disclosed is a temperature detection device. The device for detecting temperature of a processing liquid for substrate processing according to an embodiment includes a temperature measurement sensor installed adjacent to an outer surface of a tube through which the processing liquid flows, in which the temperature measurement sensor senses the temperature of the processing liquid in the tube.

Abstract: Disclosed is a temperature detection device. The device for detecting temperature of a processing liquid for substrate processing according to an embodiment includes a temperature measurement sensor installed adjacent to an outer surface of a tube through which the processing liquid flows, in which the temperature measurement sensor senses the temperature of the processing liquid in the tube.

Abstract: The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

Abstract: The present invention discloses a method for forming a capacitor of a semiconductor device which can increase a capacitance and prevent a leakage current at the same time. The method includes the steps of depositing a cap oxide film on a semiconductor substrate, patterning the cap oxide film to expose a capacitor region of the semiconductor substrate, consecutively depositing an Ru film for a lower electrode on the patterned cap oxide film and the semiconductor substrate in in-situ according to a low pressure chemical vapor deposition(LPCVD) and a plasma enhanced chemical vapor deposition(PECVD), forming a cylindrical lower electrode, by performing a chemical mechanical polishing process on the Ru film and removing the cap oxide film, forming an amorphous TaON film having a high dielectric constant on the lower electrode, crystallizing the amorphous TaON film according to a thermal treatment, and forming a metal film for an upper electrode on the crystallized TaON film.

Abstract: A gas distribution system for a chemical vapor deposition (CVD) apparatus includes a main gas supply pipe for receiving gas from a gas supply, a manifold communicated to the main gas supply pipe and having a plurality of sub-pipes, a plurality of gas metering valves provided at each of the sub-pipes so as to control gas amount flowing therein from each of the sub-pipes, a gas distribution head communicating with each of the sub-pipes so as to collectively jet gas therefrom, a control unit for outputting control signals to each of the gas control valves, and an N-point scanner electrically connected to input terminals of the control unit. The gas distribution system improves deposition uniformity by adjusting the thickness of a film deposited on a wafer in accordance with scanning information from the N-point scanner.